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RN2118(TE85L,F)

产品描述PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416
产品类别分立半导体    晶体管   
文件大小161KB,共8页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
下载文档 详细参数 选型对比 全文预览

RN2118(TE85L,F)概述

PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416

RN2118(TE85L,F)规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Toshiba(东芝)
包装说明,
Reach Compliance Codeunknown
最大集电极电流 (IC)0.1 A
最小直流电流增益 (hFE)50
元件数量1
极性/信道类型PNP
最大功率耗散 (Abs)0.1 W
表面贴装YES
晶体管元件材料SILICON

文档预览

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RN2114∼RN2118
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2114, RN2115, RN2116, RN2117, RN2118
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Built-in bias resistors
Simplified circuit design
Fewer parts and simplified manufacturing process
Complementary to RN1107 ~ RN1109
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN2114
RN2115
RN2116
RN2117
RN2118
R1 (kΩ)
1
2.2
4.7
10
47
R2 (kΩ)
10
10
10
4.7
10
JEDEC
2−2H1A
JEITA
TOSHIBA
Weight: 2.4mg (typ.)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN2114~2118
RN2114
RN2115
Emitter-base voltage
RN2116
RN2117
RN2118
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2114~2118
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−50
−50
−5
−6
−7
−15
−25
−100
100
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01

RN2118(TE85L,F)相似产品对比

RN2118(TE85L,F) RN2116(TE85L,F) RN2115(TE85L,F)
描述 PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416 PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416 PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416
是否Rohs认证 符合 符合 符合
Reach Compliance Code unknown unknown unknown
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A
最小直流电流增益 (hFE) 50 50 50
元件数量 1 1 1
极性/信道类型 PNP PNP PNP
最大功率耗散 (Abs) 0.1 W 0.1 W 0.1 W
表面贴装 YES YES YES
晶体管元件材料 SILICON SILICON SILICON
Base Number Matches - 1 1

 
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