SEMICONDUCTOR
TECHNICAL DATA
General Description
Switching regulator and DC-DC Converter applications.
It s mainly suitable for power management in PC,
portable equipment and battery powered systems.
A
C
KMB030N30D
N-Ch Trench MOSFET
H
D
J
FEATURES
・V
DSS
=30V, I
D
=30A.
・Low
Drain-Source ON Resistance.
: R
DS(ON)
=18mΩ(Max.) @ V
GS
=10V
: R
DS(ON)
=36mΩ(Max.) @ V
GS
=4.5V
・Super
High Dense Cell Design.
・High
Power and Current Handling Capability.
1
2
3
B
M
E
G
K
F
F
L
N
DIM MILLIMETERS
_
6.6 + 0.2
A
_
6.1 + 0.2
B
_
5.33 + 0.1
C
_
1.08 + 0.2
D
_
2.92 + 0.3
E
_
2.28 + 0.1
F
G
1.1 MAX
_
2.3 + 0.1
H
_
0.51+ 0.1
J
_
1.01 + 0.1
K
_ 0.1
L
0.51+
_
M
0.8 + 0.1
_
N
1.5 + 0.2
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
DC
Drain Current
Pulsed
(Note 1)
Source-Drain Diode Current
Drain Power Dissipation (Tc=25℃)
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
* : Surface Mounted on FR4 Board, t≤10sec.
I
DP
*
I
S
P
D
*
T
j
T
stg
R
thJC
R
thJA
*
75
20
50
150
-55½150
3
50
A
W
℃
℃
G
D
SYMBOL
V
DSS
V
GSS
I
D
*
RATING
30
±20
30
UNIT
V
V
A
DPAK (2)
℃/W
℃/W
S
2007. 3. 22
Revision No : 1
1/5
KMB030N30D
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Static
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Leakage Current
Gate Threshold Voltage
Drain-Source ON Resistance
ON State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
Dynamic
(Note 2)
V
DS
=15V, I
D
=20A, V
GS
=10V (Fig.1)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse transfer Capacitance
Q
g
V
DS
=15V, I
D
=20A, V
GS
=4.5V (Fig.1)
Q
gs
V
DS
=15V, I
D
=20A, V
GS
=10V (Fig.1)
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
DS
=15V,
V
GS
=0V, f=1.0MHz
V
DD
=15V, I
D
=1A,
V
GS
=10V, R
G
=6Ω
(Fig.2)
-
-
-
-
-
-
-
-
4.2
7.6
23.5
15.8
5
872
196
105
-
-
-
ns
-
-
-
-
-
pF
-
-
7.5
2.3
-
nC
-
-
15.3
-
BV
DSS
I
DSS
I
GSS
V
th
R
DS(ON)
V
GS
=4.5V, I
D
=12A
I
D(ON)
g
fs
V
SD
V
GS
=10V, V
DS
=10V
V
DS
=10V, I
D
=20A
I
S
=20A, V
GS
=0V
(Note 1)
(Note 1)
(Note 1)
(Note 1)
-
40
-
23
-
16
0.94
36
-
-
1.3
A
S
V
I
D
=250μ V
GS
=0V,
A,
V
GS
=0V, V
DS
=24V
V
GS
=±20V, V
DS
=0V
V
DS
=V
GS,
I
D
=250μ
A
V
GS
=10V, I
D
=20A
(Note 1)
30
-
-
1.0
-
-
-
-
1.7
13
-
1
±100
2.5
18
mΩ
V
μ
A
nA
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Note 1) Pulse test : Pulse width≤300㎲, Duty Cycle≤2%.
Note 2) Guaranteed by design. Not subject to production testing.
2007. 3. 22
Revision No : 1
2/5
KMB030N30D
I
D
- V
DS
20
20
I
D
- V
GS
Drain Current I
D
(A)
Drain Current I
D
(A)
16
12
8
4
0
0
0.5
V
GS
=5V
V
GS
=10,9,8,7,6V
V
GS
=4V
15
10
V
GS
=3V
V
GS
=2V
5
125
C
25
C
-55
C
0
1.0
1.5
2.0
2.5
3.0
0
0.7
1.4
2.1
2.8
3.5
4.2
Drain - Source Voltage V
DS
(V)
Gate - Source Voltage V
GS
(V)
V
th
- Tj
Normalized Threshold Voltage V
th
Reverse Drain Current I
S
(A)
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-75
1
0.4
-50
-25
0
25
50
75
100 125 150
0.6
V
GS
= 0V
I
S
- V
SD
V
DS
= V
GS
I
DS
= 250µA
20
10
0.8
1.0
1.2
1.4
Junction Temperature Tj ( C )
Source - Drain Voltage V
SD
(V)
R
DS(ON)
- T
j
1.6
V
GS
= 10V
I
D
= 20A
C - V
DS
1200
1000
Ciss
Normalized On Resistance
1.4
1.2
1.0
0.8
0.6
Capacitance (pF)
800
600
400
200
0
0
5
10
15
20
25
30
Coss
Crss
0.4
-75
-50
-25
0
25
50
75
100
125
Junction Temperature Tj ( C )
Drain - Source Voltage V
DS
(V)
2007. 3. 22
Revision No : 1
3/5
KMB030N30D
Qg - V
GS
10
Gate - Source Voltage V
GS
(V)
8
V
D
= 15V
I
D
=
20A
6
4
2
0
0
2
4
6
8
10
12
14
16
Gate - Charge Qg (nC)
R
th
Normalized Transient Thermal Resistance
10
1
0.5
1
0.2
0.1
0.05
P
DM
t
1
10
-1
0.02
0.01
t
2
Single Pluse
1. R
thJA(t)
= r(t) *R
thJA
2. R
thJA
= See data sheet
3. T
JM
-T
A
=P
DM
*R
thJA(t)
4. Duty Cycle, D=t1/t2
10
-4
10
-3
10
-2
10
-1
1
10
1
10
-2 -5
10
Square Wave Pulse Duration (sec)
2007. 3. 22
Revision No : 1
4/5
KMB030N30D
Fig. 1 Gate Charge
VGS
10 V
Schottky
Diode
ID
0.5
VDSS
ID
1.0 mA
V
DS
VGS
Q
Qgs
Qgd
Qg
Fig. 2 Resistive Load Switching
RL
VDS
90%
0.5 VDSS
6Ω
VDS
10 V
VGS
10%
t
d(on)
t
d(off)
VGS
tr
t
on
t
f
t
off
2007. 3. 22
Revision No : 1
5/5
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