RS1A thru RS1K
Vishay Semiconductors
formerly General Semiconductor
Surface Mount Fast Switching Rectifier
DO-214AC (SMA)
Cathode Band
Reverse Voltage
50 to 800V
Forward Current
1.0A
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
Mounting Pad Layout
0.066 MIN.
(1.68 MIN.)
0.094 MAX.
(2.38 MAX.)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.052 MIN.
(1.32 MIN.)
0.220
(5.58) REF
0.090 (2.29)
0.078 (1.98)
Dimensions in inches
and (millimeters)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203) MAX.
0.208 (5.28)
0.194 (4.93)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Low profile surface mount package
• Built-in strain relief
• Fast switching for high efficiency
• Glass passivated chip junction
• High temperature soldering: 250°C/10 seconds
at terminals
Mechanical Data
Case:
JEDEC DO-214AC molded plastic over glass
passivated chip
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Weight:
0.002 oz., 0.064 g
Packaging codes/options:
2Q/7.5K per 13" Reel (12mm Tape)
2P/1.8K per 7" Reel (12mm Tape)
Maximum Ratings & Thermal Characteristics
Parameter
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=90°C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) T
L
=90°C
Typical thermal resistance
(1)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
R
ΘJA
R
ΘJL
T
J
, T
STG
Symbols
RS1A
RA
50
35
50
Ratings at 25°C ambient temperature unless otherwise specified.
RS1B
RB
100
70
100
RS1D
RD
200
140
200
1.0
30
RS1G
RG
400
280
400
RS1J
RJ
600
420
600
RS1K
RK
800
500
800
Units
V
V
V
A
A
°C/W
°C
105
32
-55 to +150
Electrical Characteristics
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time at
I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
Typical junction capacitance at 4.0V, 1MHz
Ratings at 25°C ambient temperature unless otherwise specified
.
Maximum instantaneous forward voltage at 1.0A
T
A
=25°C
T
A
=125°C
V
F
I
R
t
rr
C
J
1.30
5.0
50
150
10
250
7.0
500
V
µA
ns
pF
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2 x 0.2” (5.0 x 5.0mm) copper pad area
Document Number 88707
15-Sep-03
www.vishay.com
1
RS1A thru RS1K
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curve
1.2
50
Resistive or Inductive Load
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
Peak Forward Surge Current (A)
T
L
= 90°C
8.3ms Single Half Sine-Wave
(JEDEC Method)
Average Forward Rectified Current (A)
1.0
40
30
0.5
20
10
P
.C.B. Mounted on 0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0
0
20
40
60
80
100
120
140
160
180
0
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
30
30
Fig. 4 – Typical Reverse
Characteristics
Instantaneous Reverse Current (µA)
10
Instantaneous Forward Current (A)
10
T
J
= 125°C
T
J
= 125°C
1
T
J
= 25°C
0.1
Pulse Width = 300µs
1% Duty Cycle
1
T
J
= 100°C
0.1
T
J
= 25°C
0.01
0
20
40
60
80
100
0.01
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction
Capacitance
30
100
Fig. 6 – Typical Transient
Thermal Impedance
Transient Thermal Impedance (°CW)
Mounted on 0.2 x 0.2" (5 x 5mm)
Copper Pad Area
Junction Capacitance (pF)
T
J
= 25°C
f = 1.0MH
Z
Vsig = 50mVp-p
10
RS1A-RS1G
10
RS1J-RS1K
1
1
10
100
1
0.01
0.1
1
10
Reverse Voltage (V)
www.vishay.com
2
t, Pulse Duration (sec.)
Document Number 88707
15-Sep-03
嵌入式系统
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