Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SSR2008M, SSR2008Z
SSR2009M, SSR2009Z
SSR2010M, SSR2010Z
20 AMPS
100 VOLTS
SCHOTTKY
RECTIFER
FEATURES:
•
•
•
•
•
•
•
•
•
•
PIV: 100 Volts
Low Reverse Leakage Current
Low Forward Voltage Drop
Guard Ring for Overvoltage Protection
Isolated Hermetically Sealed Package
Available in Glass or Ceramic Seal Packages
Custom Lead Forming Available
Eutectic Die Attach
175
°
C Operating Junction Temperature
TX, TXV, and Space Level Screening
Available
Designer’s Data Sheet
Part Number/Ordering Information
1/
SSR20 __ __ __ __
│
│
│
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
└
└
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Lead Options
__ = Straight Leads,
DB = Bent Down
UB = Bent Up
M = TO-254
Z = TO-254Z
Package
Voltage / Family
08 = 80V
09 = 90V
10 = 100V
MAXIMUM RATINGS
3/
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
Average Rectified Forward Current
1/4/
(Resistive Load, 60 Hz, Sine Wave, T
C
= 25
°
C)
Peak Surge Current
4/
(8.3 ms Pulse, Half Sine Wave, T
A
= 25
°
C)
Operating and Storage Temperature
Maximum Thermal Resistance
4/
(Junction to Case)
NOTE:
1/
2/
3/
4/
Derate linearly at 1A/ C for T
C
> 155 C
Screening based on MIL-PRF-19500. Screening flows available on request.
All electrical characteristics @25
°
C, unless otherwise specified
Pins 2 and 3 externally connected together
°
°
Symbol
SSR2008M & Z
SSR2009M & Z
SSR2010M & Z
V
RRM
V
RWM
V
R
I
O
I
FSM
T
OP
& T
stg
R
θJC
TO-254
Value
80
90
100
20
300
-65 to +175
1.2
Unit
Volts
Amps
Amps
°
C
°
C/W
TO-254Z
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0091J
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SSR2008M, SSR2008Z
SSR2009M, SSR2009Z
SSR2010M, SSR2010Z
Symbol
I
F
= 10 A
I
F
= 15 A
I
F
= 20 A
I
F
= 10 A
T
A
= 25
°
C
T
C
= 100
°
C
V
F1
V
F2
V
F3
V
F4
I
R1
I
R2
C
J
ELECTRICAL CHARACTERISTICS
3/
(per leg)
Instantaneous Forward Voltage Drop
(300 - 500μs Pulse)
Instantaneous Forward Voltage Drop
(T
A
= -55
°
C, 300 - 500μs Pulse)
Reverse Leakage Current
(Rated V
R
, 300μs pulse minimum)
Junction Capacitance
(V
R
= 10 V, f = 1MHz, T
A
= 25
°
C)
CASE OUTLINE: TO-254 (Suffix M)
Max
0.75
0.82
0.85
0.85
200
10
800
Unit
Volts
Volts
μA
mA
pF
CASE OUTLINE: TO-254Z (Suffix Z)
Optional Bent Down Leads
(MDB & ZDB Suffix)
Optional with Bent Up Leads
(MUB & ZUB Suffix)
Available in the following configurations:
TO-254:
SSR2008M, SSR2008MUB, SSR2008MDB,
SSR2009M, SSR2009MUB, SSR2009MDB,
SSR2010M, SSR2010MUB, SSR2010MDB
SSR2008Z, SSR2008ZUB, SSR2008ZDB,
SSR2009Z, SSR2009ZUB, SSR2009ZDB,
SSR2010Z, SSR2010ZUB, SSR2010ZDB
FUNCTION
Rectifier
5/
PIN ASSIGNMENT
PIN 1
PIN 2
Cathode
Anode
PIN 3
Anode
TO-254Z:
NOTE: 5/
Pins 2 and 3 externally connected for best
performance.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0091J
DOC
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
