Philips Semiconductors
Preliminary specification
Inverting Schmitt-triggers
FEATURES
•
Wide supply voltage range from 2.0 to 6.0 V
•
High noise immunity
•
Low power dissipation
•
Balanced propagation delays
•
Unlimited input rise and fall times
•
Very small 6 pins package.
APPLICATIONS
•
Wave and pulse shapers for highly noisy environments
•
Astable multivibrators
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
6.0 ns.
DESCRIPTION
74HC2G14; 74HCT2G14
•
Monostable multivibrators
•
Output capability: standard.
The 74HC2G/HCT2G14 is a high-speed Si-gate CMOS
device.
The 74HC2G/HCT2G14 provides two inverting buffers
with Schmitt-trigger action. This device is capable of
transforming slowly changing input signals into sharply
defined, jitter-free output signals.
TYPICAL
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
×
N +
∑
(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz; f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total switching outputs;
∑
(C
L
×
V
CC2
×
f
o
) = sum of outputs.
2. For HC2G the condition is V
I
= GND to V
CC
.
For HCT2G the condition is V
I
= GND to V
CC
−
1.5 V.
FUNCTION TABLE
See note 1.
INPUTS
nA
L
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
OUTPUTS
nY
H
L
PARAMETER
propagation delay nA to nY
input capacitance
power dissipation capacitance
notes 1 and 2
CONDITIONS
HC2G
C
L
= 50 pF; V
CC
= 4.5 V
16
2
10
HCT2G
21
2
10
ns
pF
pF
UNIT
2003 May 1
2
Philips Semiconductors
Preliminary specification
Inverting Schmitt-triggers
RECOMMENDED OPERATING CONDITIONS
74HC2G14
SYMBOL
V
CC
V
I
V
O
T
amb
PARAMETER
supply voltage
input voltage
output voltage
operating ambient
temperature
CONDITIONS
MIN.
2.0
0
0
see DC and AC
−40
characteristics per
device
TYP.
5.0
−
−
+25
74HC2G14; 74HCT2G14
74HCT2G14
UNIT
MIN.
4.5
0
0
−40
TYP.
5.0
−
−
+25
MAX.
5.5
V
CC
V
CC
+125
V
V
V
°C
MAX.
6.0
V
CC
V
CC
+125
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
I
IK
I
OK
I
O
I
CC
T
stg
P
D
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 110
°C
the value of P
D
derates linearly with 8 mW/K.
PARAMETER
supply voltage
input diode current
output diode current
output source or sink current
V
CC
or GND current
storage temperature
power dissipation per package
for temperature range from
−40
to +125
°C;
note 2
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V; note 1
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V; note 1
−0.5
V < V
O
< V
CC
+ 0.5 V; note 1
note 1
CONDITIONS
MIN.
−0.5
−
−
−
−
−65
−
MAX.
+7.0
±20
±20
25
50
+150
300
UNIT
V
mA
mA
mA
mA
°C
mW
2003 May 1
4
Philips Semiconductors
Preliminary specification
Inverting Schmitt-triggers
DC CHARACTERISTICS
74HC2G14; 74HCT2G14
Type 74HC2G14
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
OTHER
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
:
I
O
=
−20 µA
V
I
= V
IH
or V
IL
:
I
O
=
−20 µA
V
I
= V
IH
or V
IL
:
I
O
=
−20 µA
V
I
= V
IH
or V
IL
;
I
O
=
−4.0
mA
V
I
= V
IH
or V
IL
;
I
O
=
−5.2
mA
V
OL
LOW-level output V
I
= V
IH
or V
IL
;
voltage
I
O
= 20
µA
V
I
= V
IH
or V
IL
;
I
O
= 20
µA
V
I
= V
IH
or V
IL
;
I
O
= 20
µA
V
I
= V
IH
or V
IL
;
I
O
= 4.0 mA
V
I
= V
IH
or V
IL
;
I
O
= 5.2 mA
I
I
I
CC
Note
1. All typical values are measured at T
amb
= 25
°C.
input leakage
current
quiescent supply
current
V
I
= V
CC
or GND
V
CC
(V)
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
6.0
+25
−
−
−
−
−
0.1
0.1
0.1
0.26
0.26
±0.1
1.0
T
amb
(°C)
−40
to +85
−
−
−
−
−
0.1
0.1
0.1
0.33
0.33
±1.0
10
−40
to +125 UNIT
−
−
−
−
−
0.1
0.1
0.1
0.4
0.4
±1.0
20
MIN. TYP.
(1)
MAX. MIN. MAX. MIN. MAX.
1.9
4.4
5.9
4.18
5.68
−
−
−
−
−
−
−
2.0
4.5
6.0
4.32
5.81
0
0
0
0.15
0.16
−
−
1.9
4.4
5.9
4.13
5.63
−
−
−
−
−
−
−
1.9
4.4
5.9
3.7
5.2
−
−
−
−
−
−
−
V
V
V
V
V
V
V
V
V
V
µA
µA
V
I
= V
CC
or GND; 6.0
I
O
= 0
2003 May 1
5
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