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8.0SMDJ51A

产品描述Trans Voltage Suppressor Diode, 8000W, 51V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, SMC, 2 PIN
产品类别分立半导体    二极管   
文件大小949KB,共6页
制造商Littelfuse
官网地址http://www.littelfuse.com
标准
下载文档 详细参数 全文预览

8.0SMDJ51A概述

Trans Voltage Suppressor Diode, 8000W, 51V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, SMC, 2 PIN

8.0SMDJ51A规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Littelfuse
包装说明R-PDSO-J2
Reach Compliance Codeunknown
其他特性EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
最大击穿电压62.7 V
最小击穿电压56.7 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AB
JESD-30 代码R-PDSO-J2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值反向功率耗散8000 W
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-65 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性UNIDIRECTIONAL
最大功率耗散6.5 W
参考标准IEC-61000-4-2, 4-4
最大重复峰值反向电压51 V
表面贴装YES
技术AVALANCHE
端子面层Matte Tin (Sn)
端子形式J BEND
端子位置DUAL
处于峰值回流温度下的最长时间40

文档预览

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TVS Diodes
Surface Mount – 8000W > 8.0SMDJ series
5000W 5.0SMDJ
RoHS
8.0SMDJ Series
Uni-directional
Bi-directional
Description
Pb
e3
The 8.0SMDJ series is designed specifically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
Features
• For surface mounted
applications to optimize
board space
• Low profile package
• Typical failure mode is
short from over-specified
voltage or current
• Whisker test is conducted
based on JEDEC
JESD201A per its table 4a
and 4c
• IEC-61000-4-2 ESD
30kV(Air), 30kV (Contact)
• ESD protection of data
lines in accordance with
IEC 61000-4-2
• EFT protection of data
lines in accordance with
IEC 61000-4-4
• Built-in strain relief
• Glass passivated chip
junction
• 8kW peak pulse power
capability at 10/1000μs
waveform, repetition rate
(duty cycles):0.01%
• Fast response time:
typically less than 1.0ps
from 0V to V
BR
min
• Excellent clamping
capability
• compact size with high
power density in DO-
214AB Package
• Low incremental surge
resistance
• Typical I
R
less than 5μA
when V
BR
min>22V
• High temperature reflow
soldering guaranteed:
260°C/40sec
• V
BR
@ T
J
= V
BR
@25°C
x (1+
α
T x (T
J
- 25))
(
α
T:Temperature
Coefficient, typical value
is 0.1%)
• UL Recognized compound
meeting flammability
rating V-0
• Meet MSL level1, per
J-STD-020, LF maximun
peak of 260
°
C
• Matte tin lead–free plated
• Halogen free and RoHS
compliant
• Pb-free E3 means 2
nd
level
interconnect is Pb-free
and the terminal finish
material is tin(Sn) (IPC/
JEDEC J-STD-609A.01)
Agency Recognitions
AGENCY
AGENCY FILE NUMBER
E230531
Maximum Ratings and Thermal Characteristics
(T
A
=25
O
C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation at
T
L
=25
O
C by 10/1000μs Waveform
(Fig.2)(Note 1), (Note 2)
Power Dissipation on Infinite Heat
Sink at T
L
=50
O
C
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward
Voltage at 100A for Unidirectional
Only
Operating Temperature Range
Storage Temperature Range
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
Symbol
P
PPM
P
D
I
FSM
V
F
T
J
T
STG
R
θJL
R
θJA
Value
8000
6.5
300
5.0
-65 to 150
-65 to 175
15
75
Unit
W
W
A
V
°C
°C
°C/W
°C/W
Notes:
1. Non-repetitive current pulse , per Fig. 4 and derated above T
J
(initial) =25
O
C per Fig. 3.
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
component only,duty cycle=4 per minute maximum.
Functional Diagram
Applications
TVS components are ideal for the protection of I/O
Interfaces, V
CC
bus and other vulnerable circuits used in
Telecom, Computer, Industrial and Consumer electronic
applications.
Bi-directional
Cathode
Uni-directional
Anode
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/10/19
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