Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Topaz Semiconductor |
包装说明 | , |
Reach Compliance Code | unknown |
配置 | Single |
最大漏极电流 (Abs) (ID) | 0.08 A |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码 | e0 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
极性/信道类型 | N-CHANNEL |
最大功率耗散 (Abs) | 0.8 W |
表面贴装 | NO |
端子面层 | Tin/Lead (Sn/Pb) |
SD1100HD | SD1101CHP | SD1100CHP | SD1100DD | SD1101DD | SD1101BD | SD1101HD | |
---|---|---|---|---|---|---|---|
描述 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Transistor, | Transistor, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
厂商名称 | Topaz Semiconductor | Topaz Semiconductor | Topaz Semiconductor | Topaz Semiconductor | Topaz Semiconductor | Topaz Semiconductor | Topaz Semiconductor |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
是否Rohs认证 | 不符合 | - | - | 不符合 | 不符合 | 不符合 | 不符合 |
配置 | Single | - | - | Single | Single | Single | Single |
最大漏极电流 (Abs) (ID) | 0.08 A | - | - | 0.08 A | 0.08 A | 0.08 A | 0.08 A |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | - | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码 | e0 | - | - | e0 | e0 | e0 | e0 |
工作模式 | ENHANCEMENT MODE | - | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | - | - | 150 °C | 150 °C | 150 °C | 150 °C |
极性/信道类型 | N-CHANNEL | - | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大功率耗散 (Abs) | 0.8 W | - | - | 0.36 W | 0.36 W | 0.8 W | 0.8 W |
表面贴装 | NO | - | - | NO | NO | NO | NO |
端子面层 | Tin/Lead (Sn/Pb) | - | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
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