SILICON EPIBASE PNP
DARLINGTON TRANSISTOR
BDS21SMD
•
•
•
High DC Current Gain
Hermetic Ceramic Surface Mount Package
Designed For General Purpose Amplifiers and
Low Speed Switching Applications
Screening Options Available
•
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
IB
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
-80V
-80V
-5V
-5A
-0.1A
35W
0.2W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
5
Units
°C/W
** This datasheet supersedes document 7603
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8218
Issue 1
Page 1 of 2
Website:
http://www.semelab-tt.com
SILICON EPIBASE PNP
DARLINGTON TRANSISTOR
BDS21SMD
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols
ICBO
Parameters
Collector-Cut-Off Current
Test Conditions
VCB = -80V
VCB = -60V
IE = 0
IE = 0
TC = 150°C
Min.
Typ
Max.
-0.2
-1.0
-0.5
-2
Units
mA
ICEO
IEBO
hFE
(1)
Collector-Cut-Off Current
Emitter-Cut-Off Current
Forward-current transfer
ratio
(1)
VCE = -40V
VEB = -5V
IC = -0.5A
IC = -3A
IC = -3A
IC = -5A
IC = -5A
IC = -3A
IB = 0
IC = 0
VCE = -3V
VCE = -3V
IB = -12mA
IB = -20mA
IB = -20mA
VCE = -3V
1000
1000
VCE(sat)
VBE(sat)
VBE(on)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Base-Emitter On Voltage
-2
-4
V
-2.8
-3.5
(1)
(1)
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
IC = -0.5A
f = 2MHz
VCE = -4V
8
MHz
Notes
(1) Pulse Width
≤
300us,
δ ≤
2%
MECHANICAL DATA
Dimensions in mm (inches)
4.14 (0.163)
3.84 (0.151)
0.89
(0.035)
min.
3.70 (0.146)
3.41 (0.134)
3.70 (0.146)
3.41 (0.134)
3.60 (0.142)
Max.
1
3
0.76
(0.030)
min.
10.69 (0.421)
10.39 (0.409)
2
SMD1 (TO-276AB)
Underside View
Pad 1 – Base
Pad 2 – Collector
9.67 (0.381)
9.38 (0.369)
11.58 (0.456)
11.28 (0.444)
16.02 (0.631)
15.73 (0.619)
0.50 (0.020)
0.26 (0.010)
Pad 3 - Emitter
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8218
Issue 1
Page 2 of 2
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