Philips Semiconductors
Preliminary specification
Single 2-input NAND gate
FEATURES
•
Wide supply voltage range from 0.8 to 2.7 V
•
Performance optimised for V
CC
= 1.8 V
•
High noise immunity
•
Complies with JEDEC standard:
– JESD76 (1.65 to 1.95 V)
•
8 mA output drive (V
CC
= 1.65 V)
•
CMOS low power consumption
•
Latch-up performance exceeds 250 mA
•
ESD protection:
2000 V Human Body Model (A 114-A)
200 V Machine Model (A 115-A)
•
3.3 V tolerant inputs/outputs
•
SC-88A and SC-74A package.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
input slewrate
≥
1 V/ns.
SYMBOL
t
PHL
/t
PLH
PARAMETER
propagation delay inputs A and B to
output Y
CONDITIONS
V
CC
= 0.8 V; C
L
= 15 pF; R
L
= 2 kΩ
V
CC
= 1.2 V; C
L
= 15 pF; R
L
= 2 kΩ
V
CC
= 1.5 V; C
L
= 15 pF; R
L
= 2 kΩ
V
CC
= 1.8 V; C
L
= 30 pF; R
L
= 1 kΩ
V
CC
= 2.5 V; C
L
= 30 pF; R
L
= 500
Ω
C
I
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
+ (C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
2. The condition is V
I
= GND to V
CC
.
input capacitance
power dissipation capacitance per buffer
V
CC
= 1.8 V; notes 1 and 2
DESCRIPTION
74AUC1G00
The 74AUC1G00 is a high-performance, low-power,
low-voltage, Si-gate CMOS device.
Schmitt-trigger action at all inputs makes the circuit
tolerant for slower input rise and fall time.
This device is fully specified for partial power-down
applications using I
off
. The I
off
circuitry disables the output,
preventing the damaging current backflow through the
device when it is powered down.
The 74AUC1G00 provides the single 2-input NAND
function.
TYPICAL
4.7
1.8
1.4
1.4
1.2
4
14
ns
ns
ns
ns
ns
UNIT
pF
pF
2002 Nov 12
2
Philips Semiconductors
Preliminary specification
Single 2-input NAND gate
74AUC1G00
handbook, halfpage
1
2
handbook, halfpage
&
B
Y
4
MNA098
A
MNA099
Fig.3 IEE/IEC logic symbol.
Fig.4 Logic diagram.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
CC
V
I
V
O
T
amb
t
r
,t
f
(∆t/∆f)
PARAMETER
supply voltage
input voltage
output voltage
operating ambient temperature
input rise and fall times
active mode
V
CC
= 0 V; Power-down mode
CONDITIONS
0
0
0
−40
0
MIN.
0.8
2.7
2.7
V
CC
2.7
+85
20
MAX.
V
V
V
V
°C
ns/V
UNIT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
I
IK
V
I
I
OK
V
O
I
O
I
CC
, I
GND
T
stg
P
D
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. When V
CC
=0 (Powered-down mode), the output voltage can be 2.7 V in normal operation.
PARAMETER
supply voltage
input diode current
input voltage
output diode current
output voltage
output source or sink current
V
CC
or GND current
storage temperature
power dissipation per package
for temperature range from
−40
to +85
°C
V
I
< 0
note 1
V
O
> V
CC
or V
O
< 0
active mode; notes 1 and 2
V
O
= 0 to V
CC
CONDITIONS
−
−0.5
−
−0.5
−
−
−65
−
MIN.
−0.5
−50
+3.6
±50
V
CC
+ 0.5
+3.6
±60
±100
+150
250
MAX.
+3.6
V
mA
V
mA
V
V
mA
mA
°C
mW
UNIT
Power-down mode; notes 1 and 2
−0.5
2002 Nov 12
4
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