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IDT70T15L20BF: 产品描述Dual-Port SRAM, 8KX9, 20ns, CMOS, PBGA100, 10 X 10 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-100; 产品类别存储存储; 文件大小150KB，共18页; 制造商IDT (Integrated Device Technology)

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IDT70T15L20BF概述

Dual-Port SRAM, 8KX9, 20ns, CMOS, PBGA100, 10 X 10 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-100

IDT70T15L20BF规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	BGA
包装说明	10 X 10 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-100
针数	100
Reach Compliance Code	not_compliant
ECCN代码	EAR99
最长访问时间	20 ns
I/O 类型	COMMON
JESD-30 代码	S-PBGA-B100
JESD-609代码	e0
长度	10 mm
内存密度	73728 bit
内存集成电路类型	DUAL-PORT SRAM
内存宽度	9
湿度敏感等级	3
功能数量	1
端口数量	2
端子数量	100
字数	8192 words
字数代码	8000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	8KX9
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	LFBGA
封装等效代码	BGA100,10X10,32
封装形状	SQUARE
封装形式	GRID ARRAY, LOW PROFILE, FINE PITCH
并行/串行	PARALLEL
峰值回流温度（摄氏度）	225
电源	2.5 V
认证状态	Not Qualified
座面最大高度	1.5 mm
最大待机电流	0.0025 A
最小待机电流	2.4 V
最大压摆率	0.14 mA
最大供电电压 (Vsup)	2.6 V
最小供电电压 (Vsup)	2.4 V
标称供电电压 (Vsup)	2.5 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn63Pb37)
端子形式	BALL
端子节距	0.8 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	30
宽度	10 mm

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HIGH-SPEED 2.5V

16/8K X 9 DUAL-PORT

STATIC RAM

.eatures

PRELIMINARY

IDT70T16/5L

True Dual-Ported memory cells which allow simultaneous

reads of the same memory location

High-speed access

– Commercial:20/25ns (max.)

– Industrial: 25ns (max.)

Low-power operation

– IDT70T16/5L

Active: 200mW (typ.)

Standby: 600

W (typ.)

IDT70T16/5 easily expands data bus width to 18 bits or

more using the Master/Slave select when cascading more

than one device

M/S = V

for

BUSY

output flag on Master

M/S = V

for

BUSY

input on Slave

Busy and Interrupt Flag

On-chip port arbitration logic

Full on-chip hardware support of semaphore signaling

between ports

Fully asynchronous operation from either port

LVTTL-compatible, single 2.5V (±100mV) power supply

Available in an 80-pin TQFP and 100-pin

fpBGA

Industrial temperature range (–40°C to +85°C) is available

for selected speeds

.unctional Block Diagram

R/W

I/O

- I/O

I/O

Control

BUSY

(2,3)

I/O

-I/O

I/O

Control

BUSY

(2,3)

Address

Decoder

13L

(1)

MEMORY

ARRAY

Address

Decoder

13R

(1)

R/W

ARBITRATION

INTERRUPT

SEMAPHORE

LOGIC

R/W

SEM

(3)

INT

NOTES:

1. A

is a NC for IDT70T15.

2. (MASTER):

BUSY

is output; (SLAVE):

BUSY

is input.

BUSY

outputs and

INT

outputs are non-tri-stated push-pull drivers.

M/S

SEM

(3)

INT

5663 drw 01

AUGUST 2002

DSC 5663/1

IDT70T15L20BF相似产品对比

	IDT70T15L20BF	IDT70T15L25PFI	IDT70T15L25PF	IDT70T16L25PFI	IDT70T15L20PF	IDT70T15L25BF	IDT70T16L20PF	IDT70T16L25BF	IDT70T16L25PF
描述	Dual-Port SRAM, 8KX9, 20ns, CMOS, PBGA100, 10 X 10 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-100	Dual-Port SRAM, 8KX9, 25ns, CMOS, PQFP80, 1.18 X 1.18 INCH, 0.16 INCH HEIGHT, TQFP-80	Dual-Port SRAM, 8KX9, 25ns, CMOS, PQFP80, 1.18 X 1.18 INCH, 0.16 INCH HEIGHT, TQFP-80	Dual-Port SRAM, 16KX9, 25ns, CMOS, PQFP80, 1.18 X 1.18 INCH, 0.16 INCH HEIGHT, TQFP-80	Dual-Port SRAM, 8KX9, 20ns, CMOS, PQFP80, 1.18 X 1.18 INCH, 0.16 INCH HEIGHT, TQFP-80	Dual-Port SRAM, 8KX9, 25ns, CMOS, PBGA100, 10 X 10 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-100	Dual-Port SRAM, 16KX9, 20ns, CMOS, PQFP80, 1.18 X 1.18 INCH, 0.16 INCH HEIGHT, TQFP-80	Dual-Port SRAM, 16KX9, 25ns, CMOS, PBGA100, 10 X 10 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-100	Dual-Port SRAM, 16KX9, 25ns, CMOS, PQFP80, 1.18 X 1.18 INCH, 0.16 INCH HEIGHT, TQFP-80
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
零件包装代码	BGA	QFP	QFP	QFP	QFP	BGA	QFP	BGA	QFP
包装说明	10 X 10 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-100	1.18 X 1.18 INCH, 0.16 INCH HEIGHT, TQFP-80	1.18 X 1.18 INCH, 0.16 INCH HEIGHT, TQFP-80	1.18 X 1.18 INCH, 0.16 INCH HEIGHT, TQFP-80	1.18 X 1.18 INCH, 0.16 INCH HEIGHT, TQFP-80	10 X 10 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-100	1.18 X 1.18 INCH, 0.16 INCH HEIGHT, TQFP-80	10 X 10 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-100	1.18 X 1.18 INCH, 0.16 INCH HEIGHT, TQFP-80
针数	100	80	80	80	80	100	80	100	80
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	20 ns	25 ns	25 ns	25 ns	20 ns	25 ns	20 ns	25 ns	25 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	S-PBGA-B100	S-PQFP-G80	S-PQFP-G80	S-PQFP-G80	S-PQFP-G80	S-PBGA-B100	S-PQFP-G80	S-PBGA-B100	S-PQFP-G80
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0
长度	10 mm	14 mm	14 mm	14 mm	14 mm	10 mm	14 mm	10 mm	14 mm
内存密度	73728 bit	73728 bit	73728 bit	147456 bit	73728 bit	73728 bit	147456 bit	147456 bit	147456 bit
内存集成电路类型	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM
内存宽度	9	9	9	9	9	9	9	9	9
湿度敏感等级	3	3	3	3	3	3	3	3	3
功能数量	1	1	1	1	1	1	1	1	1
端口数量	2	2	2	2	2	2	2	2	2
端子数量	100	80	80	80	80	100	80	100	80
字数	8192 words	8192 words	8192 words	16384 words	8192 words	8192 words	16384 words	16384 words	16384 words
字数代码	8000	8000	8000	16000	8000	8000	16000	16000	16000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	85 °C	70 °C	85 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	8KX9	8KX9	8KX9	16KX9	8KX9	8KX9	16KX9	16KX9	16KX9
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LFBGA	LQFP	LQFP	LQFP	LQFP	LFBGA	LQFP	LFBGA	LQFP
封装等效代码	BGA100,10X10,32	QFP80,.64SQ	QFP80,.64SQ	QFP80,.64SQ	QFP80,.64SQ	BGA100,10X10,32	QFP80,.64SQ	BGA100,10X10,32	QFP80,.64SQ
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	GRID ARRAY, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	GRID ARRAY, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE	GRID ARRAY, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	225	240	240	240	240	225	240	225	240
电源	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.5 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.5 mm	1.6 mm	1.5 mm	1.6 mm
最大待机电流	0.0025 A	0.005 A	0.0025 A	0.005 A	0.0025 A	0.0025 A	0.0025 A	0.0025 A	0.0025 A
最小待机电流	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V
最大压摆率	0.14 mA	0.16 mA	0.13 mA	0.16 mA	0.14 mA	0.13 mA	0.14 mA	0.13 mA	0.13 mA
最大供电电压 (Vsup)	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V
最小供电电压 (Vsup)	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子面层	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn85Pb15)
端子形式	BALL	GULL WING	GULL WING	GULL WING	GULL WING	BALL	GULL WING	BALL	GULL WING
端子节距	0.8 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.8 mm	0.65 mm	0.8 mm	0.65 mm
端子位置	BOTTOM	QUAD	QUAD	QUAD	QUAD	BOTTOM	QUAD	BOTTOM	QUAD
处于峰值回流温度下的最长时间	30	20	20	20	20	30	20	30	20
宽度	10 mm	14 mm	14 mm	14 mm	14 mm	10 mm	14 mm	10 mm	14 mm
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	-	-	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)

IDT70T15L20BF

IDT70T15L20BF概述

IDT70T15L20BF规格参数

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IDT70T15L20BF相似产品对比

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