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CAT522
Configured Digitally Programmable Potentiometer (DPP™):
Programmable Voltage Applications
FEATURES
Two 8-bit DPPs configured as programmable
voltage sources in DAC-like applications
Independent reference inputs
Non-volatile NVRAM memory wiper storage
Output voltage range includes both supply rails
2 independently addressable buffered
output wipers
1 LSB accuracy, high resolution
Serial Microwire-like interface
Single supply operation: 2.7V - 5.5V
Setting read-back without effecting outputs
DESCRIPTION
The CAT522 is a dual, 8-bit digitally-programmable
potentiometer (DPP™) configured for programmable
voltage and DAC-like applications. Intended for final
calibration of products such as camcorders, fax
machines and cellular telephones on automated high
volume production lines, it is also well suited for self-
calibrating systems and for applications where
equipment which requires periodic adjustment is either
difficult to access or in a hazardous environment.
The CAT522 offers two independently programmable
DPPs each having its own reference inputs and each
capable of rail to rail output swing. The wipers are
buffered by rail to rail opamps. Wiper settings, stored
in non-volatile NVRAM memory, are not lost when the
device is powered down and are automatically
reinstated when power is returned. Each wiper can
be dithered to test new output values without effecting
the stored settings and stored settings can be read
back without disturbing the DPP's output.
The CAT522 is controlled with a simple 3-wire,
microwire-like serial interface. A Chip Select pin
allows several devices to share a common serial
interface. Communication back to the host controller is
via a single serial data line thanks to the CAT522 Tri-
¯¯¯¯
Stated Data Output pin. A RDY/BSY output working
in concert with an internal low voltage detector signals
proper operation of the non-volatile NVRAM memory
Erase/Write cycle.
The CAT522 is available in the 0°C to 70°C
commercial and -40°C to 85°C industrial operating
temperature ranges. Both 14-pin plastic DIP and
surface mount packages are available.
For Ordering Information details, see page 14.
APPLICATIONS
Automated product calibration.
Remote control adjustment of equipment
Offset, gain and zero adjustments in self-
calibrating and adaptive control systems.
Tamper-proof calibrations.
DAC (with memory) substitute.
PIN CONFIGURATION
PDIP 14-Lead (L)
SOIC 14-Lead (W)
V
DD
CLK
RDY/¯¯¯¯
BSY
CS
DI
DO
PROG
1
2
3
14
13
12
V
REFH1
V
REFH1
V
OUT1
V
OUT2
V
REFL2
V
REFL1
GND
4
CAT522
11
5
6
7
10
8
8
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. MD-2004 Rev. F
CAT522
FUNCTIONAL DIAGRAM
V
DD
1
RDY/BSY
3
V
REFH1
V
REFH2
14
13
PROG
7
PROGRAM
CONTROL
WIPER CONTROL REGISTERS
AND NVRAM
24kΩ
+
–
11
V
OUT2
DI
CLK
CS
5
2
4
SERIAL
CONTROL
24kΩ
+
–
12
V
OUT1
SERIAL
DATA
OUTPUT
REGISTER
6
DO
CAT522
8
GND
9
10
V
REFL1
V
REFL2
Doc. No. MD-2004 Rev. F
2
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
CAT522
ABSOLUTE MAXIMUM RATINGS
(1)
Parameters
Supply Voltage
V
DD
to GND
Inputs
CLK to GND
CS to GND
DI to GND
¯¯¯¯
RDY/BSY to GND
PROG to GND
V
REFH
to GND
V
REFL
to GND
Ratings
-0.5 to +7
-0.5 to V
DD
+0.5
-0.5 to V
DD
+0.5
-0.5 to V
DD
+0.5
-0.5 to V
DD
+0.5
-0.5 to V
DD
+0.5
-0.5 to V
DD
+0.5
-0.5 to V
DD
+0.5
Units
V
Parameters
Outputs
D
0
to GND
V
OUT
1– 4 to GND
Operating Ambient Temperature
Commercial
(‘C’ or Blank suffix)
Industrial (‘I’ suffix)
Junction Temperature
Storage Temperature
Lead Soldering (10s max)
Ratings
-0.5 to V
DD
+0.5
-0.5 to V
DD
+0.5
0 to +70
-40 to +85
+150
-65 to +150
+300
Units
V
V
°C
°C
°C
°C
°C
V
V
V
V
V
V
V
RELIABILITY CHARACTERISTICS
Symbol
V
ZAP(2)
I
LTH(2) (3)
Parameter
ESD Susceptibility
Latch-Up
Test Method
MIL-STD-883, Test Method 3015
JEDEC Standard 17
Min
2000
100
Max
Units
V
mA
POWER SUPPLY
Symbol
I
DD1
I
DD2
V
DD
Parameter
Supply Current (Read)
Supply Current (Write)
Operating Voltage Range
Conditions
Normal Operating
Programming, V
DD
= 5V
V
DD
= 3V
Min
—
—
—
2.7
Typ
400
1600
1000
—
Max
600
2500
1600
5.5
Units
µA
µA
µA
V
LOGIC INPUTS
Symbol
I
IH
I
IL
V
IH
V
IL
Parameter
Input Leakage Current
Input Leakage Current
High Level Input Voltage
Low Level Input Voltage
Conditions
V
IN
= V
DD
V
IN
= 0V
Min
—
—
2
0
Typ
—
—
—
—
Max
10
-10
V
DD
0.8
Units
µA
µA
V
V
LOGIC OUTPUTS
Symbol
V
OH
V
IL
Parameter
High Level Output Voltage
Low Level Output Voltage
Conditions
I
OH
= -40µA
I
OL
= 1mA, V
DD
= +5V
I
OL
= 0.4mA, V
DD
= +3V
Min
V
DD
-0.3
—
—
Typ
—
—
—
Max
—
0.4
0.4
Units
V
V
V
Notes:
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
(2) This parameter is tested initially and after a design or process change that affects the parameter.
(3) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to V
CC
+ 1V.
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
3
Doc. No. MD-2004 Rev. F
CAT522
POTENTIOMETER CHARACTERISTICS
V
DD
= +2.7V to +5.5V, V
REFH
= V
DD
, V
REFL
= 0V, unless otherwise specified
Symbol
R
POT
Parameter
Potentiometer Resistance
R
POT
to RPOT Match
Pot Resistance Tolerance
Voltage on V
REFH
pin
Voltage on V
REFL
pin
Resolution
INL
DNL
R
OUT
I
OUT
TC
RPOT
C
H
/C
L
Integral Linearity Error
Differential Linearity Error
Buffer Output Resistance
Buffer Output Current
TC of Pot Resistance
Potentiometer Capacitances
300
8/8
2.7
0
0.4
0.5
0.25
1
0.5
10
3
—
Conditions
Min
Typ
24
±0.5
±1
±20
V
DD
V
DD
- 2.7
Max
Units
kΩ
%
%
V
V
%
LSB
LSB
Ω
mA
ppm/ºC
pF
AC ELECTRICAL CHARACTERISTICS
V
DD
= +2.7V to +5.5V, V
REFH
= V
DD
, V
REFL
= 0V, unless otherwise specified
Symbol
Digital
t
CSMIN
t
CSS
t
CSH
t
DIS
t
DIH
t
DO1
t
DO0
t
HZ
t
LZ
t
BUSY
t
PS
t
PROG
t
CLK
H
t
CLK
L
f
C
Analog
t
DS
DPP Settling Time to 1 LSB
C
LOAD
= 10pF, V
DD
= +5V
C
LOAD
= 10pF, V
DD
= +3V
Notes:
(1) All timing measurements are defined at the point of signal crossing V
DD
/ 2.
(2) These parameters are periodically sampled and are not 100% tested.
Parameter
Minimum CS Low Time
CS Setup Time
CS Hold Time
DI Setup Time
DI Hold Time
Output Delay to 1
Output Delay to 0
Output Delay to High-Z
Output Delay to Low-Z
Erase/Write Cycle Time
PROG Setup Time
Minimum Pulse Width
Minimum CLK High Time
Minimum CLK Low Time
Clock Frequency
Conditions
Min
150
100
0
50
Typ
—
—
—
—
—
—
—
400
400
4
—
—
—
—
—
3
6
Max
—
—
—
—
—
150
150
—
—
5
—
—
—
—
1
10
10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
MHz
µs
µs
C
L
= 100pF
(1)
50
—
—
—
—
—
150
700
500
300
DC
—
—
Doc. No. MD-2004 Rev. F
4
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
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