PTFA092213EL
PTFA092213FL
Thermally-Enhanced High Power RF LDMOS FETs
220 W, 920 – 960 MHz
Description
The PTFA092213EL and PTFA092213FL are 220-watt, internally-
matched LDMOS FETs designed for use in cellular power amplifier
applications in the 920 to 960 MHz band. These devices feature
internal I/O matching and thermally-enhanced open-cavity ceramic
packages with slotted or earless flanges. Manufactured with Infineon's
advanced LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA092213EL
Package H-33288-6
PTFA092213FL
Package H-34288-6
Two-carrier WCDMA Performance
V
DD
= 30 V, I
DQ
= 1850 mA, ƒ = 960 MHz,
3GPP WCDMA signal, P/AR = 8 dB,
10 MHz carrier spacing, 3.84 MHz Bandwidth
Gain (dB) / Drain Efficiency (%)
40
30
20
10
0
-10
-20
-30
30
-20
Features
•
•
Broadband internal matching
Typical two-carrier WCDMA performance at
960 MHz, 30 V
- Average output power = 50 W
- Linear Gain = 17.5 dB
- Efficiency = 29%
- Intermodulation distortion = –32 dBc
- Adjacent channel power = –42.5 dBc
Typical CW performance, 960 MHz, 30 V
- Output power at P–1dB = 250 W
- Linear Gain = 17.5 dB
- Efficiency = 52%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 30 V,
220 W (CW) output power
Pb-free, RoHS-compliant
Gain
Efficiency
IMD_lower
ACPR
IMD_upper
35
40
45
50
-30
-35
-40
-45
-50
-55
IMD (dBc) , ACPR (dBc)
-25
•
•
•
•
•
Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test
fixture)
V
DD
= 30 V, I
DQ
= 1850 mA, P
OUT
= 50 W average
ƒ
1
= 950 MHz, ƒ
2
= 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
All published data at T
CASE
= 25 °C unless otherwise indicated
Symbol
G
ps
Min
—
—
—
Typ
17.5
29
–32
Max
—
—
—
Unit
dB
%
dBc
η
D
IMD
*See Infineon distributor for future availability.
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 02, 2009-07-29
PTFA092213EL
PTFA092213FL
RF Characteristics
(cont.)
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1850 mA, P
OUT
= 200 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
17
40
—
Typ
17.5
42
–30
Max
—
—
–28
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.04
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 30 V, I
DQ
= 1850 mA
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70 °C, 220 W CW)
Symbol
V
DSS
V
GS
T
J
T
STG
R
θJC
Value
65
–0.5 to +12
200
–40 to +150
0.23
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFA092213EL V4
Package Outline Package Description
H-33288-6
Thermally-enhanced, slotted flange, single-ended
Thermally-enhanced, slotted flange, single-ended
Thermally-enhanced, earless flange, single-ended
Thermally-enhanced, earless flange, single-ended
Shipping
Tray
Tape & Reel, 250 pcs
Tray
Tape & Reel, 250 pcs
PTFA092213EL V4 R250 H-33288-6
PTFA092213FL V4
PTFA092213FL V4 R250
H-34288-6
H-34288-6
*See Infineon distributor for future availability.
Data Sheet
2 of 10
Rev. 02, 2009-07-29
PTFA092213EL
PTFA092213FL
Typical Performance
(data taken in a production test fixture)
CW Performance
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 960 MHz
20
19
18
70
60
21
20
CW Performance
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 960 MHz
70
T
CASE
= -10°C
T
CASE
= 25°C
T
CASE
= 90°C
Efficiency
60
50
40
30
Drain Efficiency (%)
50
40
30
19
17
16
15
14
13
35
40
45
50
55
18
17
16
15
14
35
40
Efficiency
20
10
0
Gain
20
10
0
Output Power (dBm)
Output Power (dBm)
45
50
55
Broadband Two-tone
Gain, Efficiency & Return Loss vs. Frequency
V
DD
= 30 V, I
DQ
= 1.85 A, P
OUT
= 110 W
50
45
40
35
30
25
20
15
0
20
19
Power Sweep, CW
V
DD
= 30 V, ƒ = 960 MHz
Drain Efficiency (%), Gain (dB)
Efficiency
-5
Return Loss (dB)
Return Loss
-15
-20
-25
Power Gain (dB)
-10
18
17
16
15
I
DQ
= 2.6 A
I
DQ
= 1.85 A
I
DQ
= 1.1 A
Gain
-30
-35
10
-40
900 910 920 930 940 950 960 970 980 990
35
40
45
50
55
Frequency (MHz)
Output Power (dBm)
Data Sheet
3 of 10
Rev. 02, 2009-07-29
Drain Efficiency (%)
Gain
Gain (dB)
Gain (dB)
PTFA092213EL
PTFA092213FL
Typical Performance
(cont.)
Intermodulation Distortion vs. Output Power
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ
1
= 960 MHz, ƒ
2
= 959 MHz
-20
-30
50
IS-95 CDMA Performance
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 960 MHz
-30
3rd Order
IMD (dBc)
-40
-50
-60
Drain Efficiency (%)
5th
40
30
20
Efficiency
Adj 750 kHz
-40
-50
-60
Alt
1
1.98 MHz
10
0
-70
-80
30
35
40
45
50
7th
-70
35
40
45
50
55
Output Power, PEP (dBm)
Output Power (dBm), Avg.
Single-carrier WCDMA Performance
V
DD
= 30 V, I
DQ
= 1850 mA, ƒ = 960 MHz,
3GPP WCDMA signal, P/AR = 8.5:1 dB,
3.84MHz Bandwidth
60
-30
Gate-Source Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
1.03
50
40
30
20
10
0
30
35
40
IMD
-35
-40
-45
Normalized Bias Voltage
Gain (dB) / Efficiency (%)
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0
0.20 A
0.77 A
1.33 A
1.90 A
2.47 A
3.03 A
20
40
60
80
Gain
Efficiency
-50
-55
-60
45
50
Output Power (dBm)
IMD (dBc)
Case Temperature (°C)
Data Sheet
4 of 10
Rev. 02, 2009-07-29
Adj. Ch. Power Ratio (dBc)
stm32/stm8
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