Datasheet> 器件分类 > 分立半导体> 晶体管> CMLM0705TR

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CMLM0705TR: 产品描述Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, PICOMINI-6; 产品类别分立半导体晶体管; 文件大小580KB，共2页; 制造商Central Semiconductor

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CMLM0705TR概述

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, PICOMINI-6

CMLM0705TR规格参数

参数名称	属性值
厂商名称	Central Semiconductor
包装说明	SMALL OUTLINE, R-PDSO-F6
针数	6
Reach Compliance Code	compliant
ECCN代码	EAR99
最大集电极电流 (IC)	0.6 A
集电极-发射极最大电压	60 V
配置	SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE)	75
JESD-30 代码	R-PDSO-F6
JESD-609代码	e0
元件数量	1
端子数量	6
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	PNP
最大功率耗散 (Abs)	0.35 W
认证状态	Not Qualified
表面贴装	YES
端子面层	TIN LEAD
端子形式	FLAT
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	200 MHz
最大关闭时间（toff）	100 ns
最大开启时间（吨）	45 ns

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CMLM0705

MULTI DISCRETE MODULE

™

SURFACE MOUNT

SILICON SWITCHING PNP TRANSISTOR

AND

LOW VF SILICON SCHOTTKY DIODE

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLM0705 is a

Multi Discrete Module™ consisting of a single PNP

Transistor and a Schottky Diode packaged in a space

saving PICOmini™ SOT-563 case. This device is

designed for small signal general purpose applications

where size and operational efficiency are prime

requirements.

• Combination: Small Signal Switching PNP Transistor

and Low VF Schottky Diode.

• Complementary Device:

CMLM2205

MARKING CODE: C75

SYMBOL

TJ, Tstg

SYMBOL

VCBO

VCEO

VEBO

SYMBOL

VRRM

IFRM

IFSM

350

-65 to +150

357

6.0

600

500

3.5

UNITS

°C

°C/W

UNITS

SOT-563 CASE

MAXIMUM RATINGS - CASE:

(TA=25°C)

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

MAXIMUM RATINGS - Q1:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

MAXIMUM RATINGS - D1:

(TA=25°C)

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current, tp≤1.0ms

Peak Forward Surge Current, tp = 8.0ms

ELECTRICAL CHARACTERISTICS - Q1:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

ICBO

VCB=50V

ICBO

VCB=50V, TA=125°C

ICEV

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

VCE=30V, VBE=0.5V

IC=10µA

IC=10mA

IE=10µA

IC=150mA, IB=15mA

IC=500mA, IB=50mA

IC=150mA, IB=15mA

IC=500mA, IB=50mA

VCE=10V, IC=0.1mA

VCE=10V, IC=1.0mA

VCE=10V,

IC=10mA

IC=150mA

IC=500mA

5.0

0.113

0.280

115

MAX

UNITS

µA

0.2

0.7

1.3

2.6

100

205

300

110

R1 (18-January 2010)

CMLM0705TR相似产品对比

	CMLM0705TR	CMLM0705BK	CMLM0705BKLEADFREE
描述	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, PICOMINI-6	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, PICOMINI-6	Transistor
厂商名称	Central Semiconductor	Central Semiconductor	Central Semiconductor
包装说明	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	,
Reach Compliance Code	compliant	compliant	compliant
最大集电极电流 (IC)	0.6 A	0.6 A	0.6 A
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	Single
最小直流电流增益 (hFE)	75	75	100
最高工作温度	150 °C	150 °C	150 °C
极性/信道类型	PNP	PNP	PNP
最大功率耗散 (Abs)	0.35 W	0.35 W	0.35 W
表面贴装	YES	YES	YES
标称过渡频率 (fT)	200 MHz	200 MHz	200 MHz
针数	6	6	-
ECCN代码	EAR99	EAR99	-
集电极-发射极最大电压	60 V	60 V	-
JESD-30 代码	R-PDSO-F6	R-PDSO-F6	-
JESD-609代码	e0	e0	-
元件数量	1	1	-
端子数量	6	6	-
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	-
封装形状	RECTANGULAR	RECTANGULAR	-
封装形式	SMALL OUTLINE	SMALL OUTLINE	-
认证状态	Not Qualified	Not Qualified	-
端子面层	TIN LEAD	TIN LEAD	-
端子形式	FLAT	FLAT	-
端子位置	DUAL	DUAL	-
晶体管应用	SWITCHING	SWITCHING	-
晶体管元件材料	SILICON	SILICON	-
最大关闭时间（toff）	100 ns	100 ns	-
最大开启时间（吨）	45 ns	45 ns	-

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