IDT54/74FCT16245T/AT/CT/ET
FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
FAST CMOS 16-BIT
BIDIRECTIONAL
TRANSCEIVER
FEATURES:
•
•
•
•
•
•
•
•
•
0.5 MICRON CMOS Technology
High-speed, low-power CMOS replacement for ABT functions
Typical t
SK(o)
(Output Skew) < 250ps
Low input and output leakage
≤
1µA (max.)
ESD > 2000V per MIL-STD-883, Method 3015; > 200V using
machine model (C = 200pF, R = 0)
High drive outputs (–32mA I
OH
, 64mA I
OL
)
Power off disable outputs permit “live insertion”
Typical V
OLP
(Output Ground Bounce) < 1.0V at V
CC
= 5V,
T
A
= 25°C
Available in the following packages:
– Industrial: SSOP, TSSOP, TVSOP
– Military: CERPACK
IDT54/74FCT16245T/AT/CT/ET
DESCRIPTION:
The FCT16245T 16-bit transceiver is built using advanced dual metal CMOS
technology. These high-speed, low-power transceivers are ideal for
synchronous communication between two busses (A and B). The Direction and
Output Enable controls operate these devices as either two independent 8-bit
transceivers or one 16-bit transceiver. The direction control pin (xDIR) controls
the direction of data flow. The output enable pin (xOE) overrides the direction
control and disables both ports. All inputs are designed with hysteresis for
improved noise margin.
The FCT16245T is ideally suited for driving high-capacitance loads and low-
impedance backplanes. The output buffers are designed with power off disable
capability to allow "live insertion" of boards when used as backplane drivers.
FUNCTIONAL BLOCK DIAGRAM
1
DIR
1
OE
1
A
1
1
B
1
1
A
2
1
B
2
1
A
3
1
B
3
1
A
4
1
B
4
1
A
5
1
B
5
1
A
6
1
B
6
1
A
7
1
B
7
1
A
8
1
B
8
2
DIR
2
OE
2
A
1
2
B
1
2
A
2
2
B
2
2
A
3
2
B
3
2
A
4
2
B
4
2
A
5
2
B
5
2
A
6
2
B
6
2
A
7
2
B
7
2
A
8
2
B
8
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
1
© 2006 Integrated Device Technology, Inc.
JUNE 2006
DSC-5456/8
IDT54/74FCT16245T/AT/CT/ET
FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
PIN CONFIGURATION
1
DIR
1
B
1
1
B
2
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
(2)
Description
Terminal Voltage with Respect to GND
Terminal Voltage with Respect to GND
Storage Temperature
DC Output Current
Max
–0.5 to +7
–0.5 to V
CC
+0.5
–65 to +150
–60 to +120
Unit
V
V
°C
mA
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1
OE
1
A
1
1
A
2
V
TERM
(3)
T
STG
I
OUT
GND
1
B
3
1
B
4
GND
1
A
3
1
A
4
V
CC
1
B
5
1
B
6
V
CC
1
A
5
1
A
6
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. All device terminals except FCT162XXXT and FCT166XXXT (APort) Output and
I/O terminals.
3. Output and I/O terminals terminals for FCT162XXX and FCT166XXXT (A-Port).
CAPACITANCE
(T
A
= +25°C, F = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Typ.
3.5
3.5
Max.
6
8
Unit
pF
pF
GND
1
B
7
1
B
8
2
B
1
2
B
2
GND
1
A
7
1
A
8
2
A
1
2
A
2
NOTE:
1. This parameter is measured at characterization but not tested.
PIN DESCRIPTION
Pin Names
xOE
xDIR
xAx
xBx
Description
Output Enable Inputs (Active LOW)
Direction Control Inputs
Side A Inputs or 3-State Outputs
Side B Inputs or 3-State Outputs
GND
2
B
3
2
B
4
GND
2
A
3
2
A
4
V
CC
2
B
5
2
B
6
V
CC
2
A
5
2
A
6
FUNCTION TABLE
(1)
Inputs
xOE
L
L
H
xDIR
L
H
X
Outputs
Bus B Data to Bus A
Bus A Data to Bus B
High Z State
GND
2
B
7
2
B
8
2
DIR
GND
2
A
7
2
A
8
2
OE
SSOP/ TSSOP/ TVSOP/ CERPACK
TOP VIEW
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
Z = High-Impedance
2
IDT54/74FCT16245T/AT/CT/ET
FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Industrial: T
A
= –40°C to +85°C, V
CC
= 5.0V ±10%; Military: T
A
= –55°C to +125°C, V
CC
= 5.0V ±10%
Symbol
V
IH
V
IL
I
IH
Parameter
Input HIGH Level
Input LOW Level
Input HIGH Current (Input pins)
(5)
Input HIGH Current (I/O pins)
(5)
I
IL
Input LOW Current (Input pins)
(5)
Input LOW Current (I/O pins)
(5)
I
OZH
I
OZL
V
IK
I
OS
V
H
I
CCL
I
CCH
I
CCZ
High Impedance Output Current
(3-State Output pins)
(5)
Clamp Diode Voltage
Short Circuit Current
Input Hysteresis
Quiescent Power Supply Current
V
CC
= Max.
V
IN
= GND or V
CC
V
CC
= Min., I
IN
= –18mA
V
CC
= Max., V
O
= GND
(3)
—
V
CC
= Max.
V
O
= 2.7V
V
O
= 0.5V
V
I
= GND
Test Conditions
(1)
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
CC
= Max.
V
I
= V
CC
Min.
2
—
—
—
—
—
—
—
—
–80
—
—
Typ.
(2)
—
—
—
—
—
—
—
—
–0.7
–140
100
5
Max.
—
0.8
±1
±1
±1
±1
±1
±1
–1.2
–250
—
500
V
mA
mV
µA
µA
Unit
V
V
µA
OUTPUT DRIVE CHARACTERISTICS
Symbol
I
O
V
OH
Parameter
Output Drive Current
Output HIGH Voltage
Test Conditions
(1)
V
CC
= Max., V
O
= 2.5V
(3)
V
CC
= Min.
I
OH
= –3mA,
V
IN
= V
IH
or V
IL
I
OH
= –12mA MIL
I
OH
= –15mA IND
I
OH
= –24mA MIL
I
OH
= –32mA IND
(4)
V
CC
= Min.
I
OL
= 48mA MIL
V
IN
= V
IH
or V
IL
I
OL
= 64mA IND
V
CC
= 0V
,
V
IN
or V
O
≤
4.5V
Min.
–50
–2.5
2.4
2
—
—
Typ.
(2)
—
3.5
3.5
3
0.2
—
Max.
–180
—
—
—
0.55
±1
Unit
mA
V
V
V
V
μA
V
OL
I
OFF
Output LOW Voltage
Input/Output Power Off Leakage
(5)
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
4. Duration of the condition can not exceed one second.
5. The test limit for this parameter is ±5µA at T
A
= –55°C.
3
IDT54/74FCT16245T/AT/CT/ET
FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS
Symbol
ΔI
CC
I
CCD
Parameter
Quiescent Power Supply Current
TTL Inputs HIGH
Dynamic Power Supply
Current
(4)
V
CC
= Max.
V
IN
= 3.4V
(3)
V
CC
= Max.
Outputs Open
xOE = xDIR = GND
One Input Togging
50% Duty Cycle
V
CC
= Max.
Outputs Open
f
i
= 10MHz
50% Duty Cycle
xOE = xDIR = GND
One Bit Toggling
V
CC
= Max.
Outputs Open
f
i
= 2.5MHz
50% Duty Cycle
xOE = xDIR = GND
Sixteen BitsTogging
V
IN
= V
CC
V
IN
= GND
Test Conditions
(1)
Min.
—
—
Typ.
(2)
0.5
60
Max.
1.5
100
Unit
mA
µA/
MHz
I
C
Total Power Supply Current
(6)
V
IN
= V
CC
V
IN
= GND
V
IN
= 3.4V
V
IN
= GND
V
IN
= V
CC
V
IN
= GND
—
0.6
1.5
mA
—
0.9
2.3
—
2.4
4.5
(5)
V
IN
= 3.4V
V
IN
= GND
—
6.4
16.5
(5)
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Per TTL driven input (V
IN
= 3.4V). All other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
ΔI
CC
D
H
N
T
+ I
CCD
(f
CP
N
CP
/2 + fiNi)
I
CC
= Quiescent Current (I
CCL
, I
CCH
and I
CCZ
)
ΔI
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for Register Devices (Zero for Non-Register Devices)
N
CP
= Number of Clock Inputs at f
CP
fi = Input Frequency
Ni = Number of Inputs at fi
4
IDT54/74FCT16245T/AT/CT/ET
FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
SWITCHING CHARACTERISTICS OVER OPERATING RANGE - INDUSTRIAL
Symbol
t
PLH
t
PHL
t
PZH
t
PZL
t
PHZ
t
PLZ
t
PZH
t
PZL
t
PHZ
t
PZL
t
SK(o)
Parameter
Propagation Delay
A to B, B to A
Output Enable Time
xOE to A or B
Output Disable Time
xOE to A or B
Output Enable Time
xDIR to A or B
(4)
Output Disable Time
xDIR to A or B
(4)
Output Skew
(3)
Condition
C
L
= 50pF
R
L
= 500Ω
(1)
74FCT16245AT
Min.
(2)
Max.
1.5
4.6
1.5
1.5
1.5
1.5
—
6.2
5
6.2
5
0.5
74FCT16245CT
Min.
(2)
Max.
1.5
4.1
1.5
1.5
1.5
1.5
—
5.8
4.8
5.8
4.8
0.5
74FCT16245ET
Min.
(2)
Max.
1.5
3.2
1.5
1.5
1.5
1.5
—
4.4
4
4.8
4
0.5
Unit
ns
ns
ns
ns
ns
ns
SWITCHING CHARACTERISTICS OVER OPERATING RANGE - MILITARY
Symbol
t
PLH
t
PHL
t
PZH
t
PZL
t
PHZ
t
PLZ
t
PZH
t
PZL
t
PHZ
t
PZL
t
SK(o)
Parameter
Propagation Delay
A to B, B to A
Output Enable Time
xOE to A or B
Output Disable Time
xOE to A or B
Output Enable Time
xDIR to A or B
(4)
Output Disable Time
xDIR to A or B
(4)
Output Skew
(3)
Condition
C
L
= 50pF
R
L
= 500Ω
(1)
54FCT16245T
Min.
(2)
Max.
1.5
7.5
1.5
1.5
1.5
1.5
—
10
10
10
10
0.5
54FCT16245AT
Min.
(2)
Max.
1.5
4.9
1.5
1.5
1.5
1.5
—
6.5
6
6.5
6
0.5
54FCT16245CT
Min.
(2)
Max.
1.5
4.5
1.5
1.5
1.5
1.5
—
6.2
5.2
6.2
5.2
0.5
Unit
ns
ns
ns
ns
ns
ns
NOTES:
1. See test circuit and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
3. Skew between any two outputs of the same package switching in the same direction. This parameter is guaranteed by design.
4. This limit is guaranteed but not tested.
5
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