电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

UMT18NTR

产品描述Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 2-Element, PNP, Silicon, SC-88, 6 PIN
产品类别分立半导体    晶体管   
文件大小65KB,共4页
制造商ROHM(罗姆半导体)
官网地址https://www.rohm.com/
标准  
下载文档 详细参数 选型对比 全文预览

UMT18NTR在线购买

供应商 器件名称 价格 最低购买 库存  
UMT18NTR - - 点击查看 点击购买

UMT18NTR概述

Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 2-Element, PNP, Silicon, SC-88, 6 PIN

UMT18NTR规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称ROHM(罗姆半导体)
零件包装代码SC-88
包装说明SMALL OUTLINE, R-PDSO-G6
针数6
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time13 weeks
最大集电极电流 (IC)0.5 A
集电极-发射极最大电压12 V
配置SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)270
JESD-30 代码R-PDSO-G6
JESD-609代码e2
湿度敏感等级1
元件数量2
端子数量6
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性/信道类型PNP
最大功率耗散 (Abs)0.15 W
认证状态Not Qualified
表面贴装YES
端子面层Tin/Copper (Sn/Cu)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间10
晶体管元件材料SILICON
标称过渡频率 (fT)260 MHz

UMT18NTR文档预览

EMT18 / UMT18N / IMT18
Transistors
General purpose transistors
(dual transistors)
EMT18 / UMT18N / IMT18
Features
1) Two 2SA2018 chips in a EMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
External dimensions
(Unit : mm)
(4)
(5)
(6)
(3)
(2)
0.13
1.2
1.6
(1)
Each lead has same dimensions
ROHM :
EMT6
Abbreviated symbol :
T18
0.65
1.3
0.65
0.7
0.95 0.95
0.8
Structure
Epitaxial planar type
NPN silicon transistor
(4)
UMT18N
0.2
(3)
0.5
0.5 0.5
1.0
1.6
0.22
EMT18
(6)
1.25
2.1
0.15
(1)
The following characteristics apply to both Tr
1
and Tr
2
.
ROHM : UMT6
EIAJ : SC-88
0.1Min.
Each lead has same dimensions
Abbreviated symbol :
T18
(6)
Equivalent circuit
EMT18 / UMT18N
(3)
(2)
(1)
IMT18
0.3
(1)
0.9
IMT18
(4)
(5)
(6)
0.15
(4)
(5)
1.6
2.8
(3)
(2)
Tr
1
Tr
2
Tr
2
Tr
1
0.3Min.
Each lead has same dimensions
(4)
(5)
(6)
(3)
(2)
(1)
ROHM : SMT6
EIAJ : SC-74
JEDEC : SOT-457
Abbreviated symbol :
T18
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Limits
Symbol
V
CBO
−15
V
CEO
−12
V
EBO
−6
I
C
−500
∗1
I
CP
1.0
EMT6
∗2
150 (TOTAL)
P
C
UMT6
SMT6 300 (TOTAL)
∗3
Tj
150
Tstg
−55
to
+150
Unit
V
V
V
mA
A
mW
°C
°C
Power dissipation
Junction temperature
Storage temperature
∗1
Single pulse P
W
=1ms
∗2
120mW per element must not be exceeded.
∗3
200mW per element must not be exceeded.
Rev.A
1.1
1.9
2.9
2.0
(5)
(2)
1/3
EMT18 / UMT18N / IMT18
Transistors
Electrical characteristics
(Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BV
CBO
−15
V I
C
= −10µA
V I
C
= −1mA
Collector-emitter breakdown voltage BV
CEO
−12
Emitter-base breakdown voltage
BV
EBO
−6
V I
E
= −10µA
Collector cutoff current
I
CBO
−0.1 µA
V
CB
= −15V
Emitter cutoff current
I
EBO
−0.1 µA
V
CB
= −6V
Collector-emitter saturation voltage V
CE (sat)
−100 −250
mV I
C
/ I
B
= −200mA
/
−10mA
V
CE
= −2V,
I
C
= −10mA
DC current transfer ratio
h
FE
270
680
Transition frequency
f
T
260
MHz V
CE
= −2V,
I
E
=10mA,
f=100MHz
Output capacitance
Cob
6.5
pF V
CB
= −10V,
I
E
=0A,
f=1MHz
Packaging specifications and h
FE
Type
EMT18
UMT18N
IMT18
Package name
Code
Basic ordering unit (pieces)
T2R
8000
Taping
TR
3000
T110
3000
Electrical characteristic curves
1000
V
CE
=2V
1000
500
200
100
50
20
10
5
2
Ta=125°C
Ta=25°C
Ta=
−40°C
V
CE
=2V
1000
500
I
C
/ I
B
=20
COLLECTOR CURRENT : I
C
(mA)
500
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(V)
DC CURRENT GAIN : h
FE
200
100
50
20
10
5
2
1
0
Ta=125°C
Ta=25°C
Ta=
−40°C
200
100
50
20
10
5
2
Ta=125°C
Ta=25°C
Ta=
−40°C
0.5
1.0
1.5
1
1
2
5
10 20
50 100 200
500 1000
1
1
2
5
10 20
50 100 200
500 1000
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.1 Grounded Emitter Propagation
Characteristics
Fig.2 DC Current Gain vs.
Collector Current
Fig.3 Collector-Emitter Saturation
Voltage vs.
Collector Current
(Ι)
Rev.A
2/3
EMT18 / UMT18N / IMT18
Transistors
BASER SATURATION VOLTAGE : V
BE (sat)
(mV)
1000
500
500
200
100
50
20
10
5
2
1
1
2
5
10 20
50 100 200
500 1000
Ta=
−40°C
Ta=25°C
Ta=125°C
TRANSITION FREQUENCY : f
T
(MHz)
Ta=25°C
1000
I
C
/ I
B
=20
1000
500
200
100
50
20
10
5
2
1
1
2
5
10 20
V
CE
=2V
Ta=25°C
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(mV)
200
100
50
20
10
5
2
1
1
2
5
10 20
50 100 200
500 1000
I
C
/ I
B
=50
I
C
/ I
B
=20
I
C
/ I
B
=10
50 100 200
500 1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
C
(mA)
Fig.4 Collector-Emitter Saturation
Voltage vs.
Collector Current
(ΙΙ)
Fig.5 Base-Emitter Saturation
Voltage vs.Collecter Current
Fig.6 Gain Bandwidth Product vs.
Emitter Current
EMITTER INPUT CAPACITANCE :
Cib (pF)
COLLECTOR OUTPUT CAPACITANCE :
Cob (pF)
1000
500
200
100
50
20
10
5
2
1
0.1 0.2
0.5
1
2
5
Cob
Cib
I
E
=0A
f=1MHz
Ta=25°C
10 20
50 100
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.7 Collector Output Capacitance vs.
Collector-Base Voltage
Emitter Input Capacitance vs.
Emitter-Base Voltage
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

UMT18NTR相似产品对比

UMT18NTR UMT18NTN
描述 Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 2-Element, PNP, Silicon, SC-88, 6 PIN Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 2-Element, PNP, Silicon, UMT6, SC-88, 6 PIN
是否无铅 不含铅 不含铅
是否Rohs认证 符合 符合
厂商名称 ROHM(罗姆半导体) ROHM(罗姆半导体)
零件包装代码 SC-88 SC-88
包装说明 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
针数 6 6
Reach Compliance Code compliant compliant
ECCN代码 EAR99 EAR99
最大集电极电流 (IC) 0.5 A 0.5 A
集电极-发射极最大电压 12 V 12 V
配置 SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE) 270 270
JESD-30 代码 R-PDSO-G6 R-PDSO-G6
JESD-609代码 e2 e2
湿度敏感等级 1 1
元件数量 2 2
端子数量 6 6
最高工作温度 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 260
极性/信道类型 PNP PNP
最大功率耗散 (Abs) 0.15 W 0.15 W
认证状态 Not Qualified Not Qualified
表面贴装 YES YES
端子面层 Tin/Copper (Sn/Cu) Tin/Copper (Sn/Cu)
端子形式 GULL WING GULL WING
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 10 10
晶体管元件材料 SILICON SILICON
标称过渡频率 (fT) 260 MHz 260 MHz
吃蘑菇看小人!又到了一年一度云南人自己毒自己的时候了
因为新冠疫情,相信大家都很久没有出游了,转一篇关于云南吃菌子的文章,领略一下不同地区的风土人情。你还知道哪些地方有哪些有意思的事儿,欢迎分享! 【转自穷游网微信公众号】 ......
eric_wang 聊聊、笑笑、闹闹
Modelsim入门
518677 ...
至芯科技FPGA大牛 FPGA/CPLD
Altium Designer中的串扰消除技术
ByJane Zhang, Aug 27, 2019 449130 还记得你还在上学的时候,遇到老师向全班提了一个问题而你知道答案!你和其他几个学生兴奋地举手,希望老师会叫你起来回答问题。如果你有幸能在第一 ......
qwqwqw2088 PCB设计
【第0周】Hanker | 开机跑demo
大约是因为同城的缘故,今天收到试用的M4开发板了。 87015 采光不好,将就着看吧。必须要说的是做工很好,板子看上去很漂亮。美中不足是没有配套光盘。 87014 上电,是一个计算器的demo。随 ......
zca123 微控制器 MCU
问题分析,大家热情指教,共同提高
在quartus中写如下的代码: module test(go,out); input go; output out; wire out; reg out1; assign out=out1; always @(negedge go) begin out1=1'b1; #10 out1=1'b0; ......
eeleader FPGA/CPLD
南京A.O.SMITH诚招传感器工程师
1.传感器工程师-软件 职位描述: 1.寻找开发空净和水相关传感器; 2.将传感器应用在公司的产品中,并解决传感器的可靠性,一致性和有效性等相关问题; 3.负责相关产品的智能化开发。 ......
MythKONG 求职招聘

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2862  1971  170  2729  763  58  40  4  55  16 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved