Si3442BDV
New Product
Vishay Siliconix
N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
20
r
DS(on)
(W)
0.057 @ V
GS
= 4.5 V
0.090 @ V
GS
= 2.5 V
I
D
(A)
4.2
3.4
TSOP-6
Top View
1
3 mm
6
5
(3) G
4
(1, 2, 5, 6) D
2
3
2.85 mm
(4) S
N-Channel MOSFET
Ordering Information: Si3442BDV-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
5 secs
20
"12
4.2
3.4
20
1.4
1.67
1.07
Steady State
Unit
V
3.0
2.4
A
0.72
0.86
0.55
−55
to 150
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board, t
v
5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72504
S-32138—Rev. A, 27-Oct-03
www.vishay.com
t
v
5 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
75
120
70
Maximum
100
145
85
Unit
_C/W
C/W
1
Si3442BDV
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D( )
D(on)
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70_C
V
DS
= 5 V, V
GS
= 4.5 V
V
DS
= 5 V, V
GS
= 2.5 V
V
GS
= 4.5 V, I
D
= 40 A
V
GS
= 2.5 V, I
D
= 3.4 A
V
DS
= 10 V, I
D
= 4.0 A
I
S
= 1.6 A, V
GS
= 0 V
10
4
0.045
0.070
11.3
0.75
1.2
0.057
0.090
W
S
V
0.6
1.8
"100
1
5
V
nA
mA
Symbol
Test Condition
Min
Typ
Max
Unit
A
r
DS(on)
g
fs
V
SD
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1.6 A, di/dt = 100 A/ms
V
DD
= 10 V, R
L
= 10
W
I
D
^
1 A, V
GEN
= 4.5 V, R
G
= 6
W
f = 1 MHz
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 4.0 A
3
0.65
0.95
2.7
35
50
20
15
30
55
75
30
25
60
ns
W
5
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V
GS
= 5 thru 3.5 V
16
I
D
−
Drain Current (A)
3V
I
D
−
Drain Current (A)
16
25_C
12
125_C
20
T
C
=
−55_C
Transfer Characteristics
12
2.5 V
8
8
4
2V
1.5 V
0
1
2
3
4
5
4
0
V
DS
−
Drain-to-Source Voltage (V)
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0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72504
S-32138—Rev. A, 27-Oct-03
2
Si3442BDV
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.14
r
DS(on)
−
On-Resistance (
W
)
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
4
8
12
16
20
V
GS
= 2.5 V
C
−
Capacitance (pF)
480
400
320
240
160
80
C
rss
0
0
4
8
12
16
20
C
oss
C
iss
Vishay Siliconix
Capacitance
V
GS
= 4.5 V
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
−
Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 4 A
4
1.4
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 4 A
1.2
3
r
DS(on)
−
On-Resistance (
W)
(Normalized)
1.0
2
1
0.8
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.6
−50
−25
0
25
50
75
100
125
150
Q
g
−
Total Gate Charge (nC)
T
J
−
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
10
T
J
= 150_C
I
S
−
Source Current (A)
1
0.20
On-Resistance vs. Gate-to-Source Voltage
r
DS(on)
−
On-Resistance (
W
)
0.16
I
D
= 4 A
0.12
0.1
T
J
= 25_C
0.08
0.01
0.04
0.001
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
V
SD
−
Source-to-Drain Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72504
S-32138—Rev. A, 27-Oct-03
www.vishay.com
3
Si3442BDV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.3
0.2
0.1
V
GS(th)
Variance (V)
−0.0
−0.1
−0.2
−0.3
−0.4
−0.5
−0.6
−50
0
0.01
2
Power (W)
4
I
D
= 250
mA
6
T
A
= 25_C
Single Pulse
8
Single Pulse Power
−25
0
25
50
75
100
125
150
0.1
1
Time (sec)
10
100
600
T
J
−
Temperature (_C)
100
Safe Operating Area
r
DS(on)
Limited
I
DM
Limited
10
ms
100
ms
10
I
D
−
Drain Current (A)
1
1 ms
10 ms
0.1
T
A
= 25_C
Single Pulse
BV
DSS
Limited
1
10
100 ms
dc, 100 s, 10 s, 1 s
0.01
0.1
100
V
DS
−
Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 120_C/W
t
1
t
2
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
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4
Document Number: 72504
S-32138—Rev. A, 27-Oct-03
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