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RN1312(TE85L2)

产品描述TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal
产品类别分立半导体    晶体管   
文件大小283KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 选型对比 全文预览

RN1312(TE85L2)概述

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal

RN1312(TE85L2)规格参数

参数名称属性值
厂商名称Toshiba(东芝)
零件包装代码SC-70
包装说明SMALL OUTLINE, R-PDSO-G3
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性BUILT-IN BIAS RESISTOR
最大集电极电流 (IC)0.1 A
集电极-发射极最大电压50 V
配置SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)120
JESD-30 代码R-PDSO-G3
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)250 MHz

文档预览

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RN1312,RN1313
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT
Process)
RN1312,RN1313
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2312, RN2313
Unit: mm
Equivalent Circuit
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
50
50
5
100
100
150
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN1312
RN1313
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
R1
Test
Circuit
Test Condition
V
CB
= 50V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 1mA
I
C
= 5mA, I
B
= 0.25mA
V
CE
= 10V, I
C
= 5mA
V
CB
= 10V, I
E
= 0, f = 1MHz
Min
120
15.4
32.9
Typ.
0.1
250
3
22
47
Max
100
100
700
0.3
6
28.6
61.1
V
MHz
pF
kΩ
Unit
nA
nA
1
2007-11-01

RN1312(TE85L2)相似产品对比

RN1312(TE85L2) RN1313(TE85L2) RN1313(TE85L) RN1313(TE85R) RN1312(TE85L) RN1312(TE85R)
描述 TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal
零件包装代码 SC-70 SC-70 SC-70 SC-70 SC-70 SC-70
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
针数 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V 50 V 50 V
配置 SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 120 120 120 120 120 120
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
元件数量 1 1 1 1 1 1
端子数量 3 3 3 3 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz
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