Datasheet> 器件分类 > 分立半导体> 晶体管> RN1409(TE85R2)

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RN1409(TE85R2): 产品描述TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal; 产品类别分立半导体晶体管; 文件大小354KB，共6页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN1409(TE85R2)概述

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal

RN1409(TE85R2)规格参数

参数名称	属性值
厂商名称	Toshiba(东芝)
包装说明	SMALL OUTLINE, R-PDSO-G3
针数	3
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	BUILT-IN BIAS RESISTOR RATIO IS 2.14
最大集电极电流 (IC)	0.1 A
集电极-发射极最大电压	50 V
配置	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	70
JESD-30 代码	R-PDSO-G3
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	250 MHz

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RN1407½RN1409

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process)

RN1407, RN1408, RN1409

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

With built-in bias resistors

Simplified circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN2407~RN2409

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN1407

RN1408

RN1409

R1 (kΩ)

R2 (kΩ)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

RN1407~RN1409

RN1407

Emitter-base voltage

RN1408

RN1409

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1407~RN1409

stg

EBO

Symbol

CBO

CEO

Rating

100

200

150

−55~150

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012g (typ.)

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

RN1409(TE85R2)相似产品对比

	RN1409(TE85R2)	RN1407(TE85R2)	RN1407(TE85L)	RN1407(TE85L2)	RN1409(TE85R)	RN1407(TE85R)	RN1409(TE85L)	RN1409(TE85L2)
描述	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal
厂商名称	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)
包装说明	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
针数	3	3	3	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	BUILT-IN BIAS RESISTOR RATIO IS 2.14	BUILT-IN BIAS RESISTOR RATIO IS 0.213	BUILT-IN BIAS RESISTOR RATIO IS 0.213	BUILT-IN BIAS RESISTOR RATIO IS 0.213	BUILT-IN BIAS RESISTOR RATIO IS 2.14	BUILT-IN BIAS RESISTOR RATIO IS 0.213	BUILT-IN BIAS RESISTOR RATIO IS 2.14	BUILT-IN BIAS RESISTOR RATIO IS 2.14
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
集电极-发射极最大电压	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V
配置	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	70	80	80	80	70	80	70	70
JESD-30 代码	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
元件数量	1	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz

RN1409(TE85R2)

RN1409(TE85R2)概述

RN1409(TE85R2)规格参数

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