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Datasheet> 器件分类 > 存储> 存储> SM532048004X3S8
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SM532048004X3S8

产品描述DRAM
产品类别存储    存储   
文件大小180KB，共24页
制造商SMART Modular Technology Inc
下载文档 详细参数 选型对比 全文预览

SM532048004X3S8概述

DRAM

SM532048004X3S8规格参数

参数名称属性值
厂商名称SMART Modular Technology Inc
包装说明,
Reach Compliance Codeunknown

SM532048004X3S8文档预览

SMART
Features
•
•
•
•
•
•
•
•
•
•
•
®
SM5320480UUXUUU
January 16, 1997
Modular Technologies
16MByte (4M x 32) DRAM Module - 2Mx8 based
72-pin SIMM
Part Numbers
SM53204800UXUUU
SM53204801UXUUU
SM53204808UXUUU
SM53204809UXUUU
Standard
:
Non-JEDEC
Configuration
:
Non-parity
Access Time
:
60/70/80ns
Operation Mode
:
FPM/EDO
Operating Voltage :
3.3/5.0V
Refresh
:
2K/4K
Device Physicals
:
300mil SOJ/TSOP, 400mil SOJ
Lead Finish
:
Gold/Solder
Length x Height
:
4.250" x 1.000"
No. of sides
:
Single-sided
Mating Connector (Examples)
Horizontal
:
AMP-7-382486-2 (Tin) / 7-382487-2 (Gold)
Vertical
:
AMP-822019-4 (Tin) / 822031-4 (Gold)
Angled
:
AMP-822110-3 (Tin) / 822097-3 (Gold)
:
:
:
:
FPM, 5.0V
FPM, 3.3V
EDO, 5.0V
EDO, 3.3V
Note: Refer last page for all "U” options.
Related Products
SM5320440UUXUUU
:
4Mx32,
4Mx4 based.
Functional Diagram
CAS1#
CAS0#
RAS0#
A0~A10/A11
2Mx8
DRAM
2Mx8
DRAM
2Mx8
DRAM
2Mx8
DRAM
CAS2#
CAS3#
RAS2#
RAS1#
2Mx8
DRAM
2Mx8
DRAM
2Mx8
DRAM
2Mx8
DRAM
RAS3#
DQ0~DQ7
DQ8~DQ15
DQ16~DQ23
DQ24~DQ31
DQ0~DQ31
Notes : 1. A11 is NC for 2K refresh module.
2. WE# to all DRAMs.
3. OE# of all devices is grounded.
V
CC
V
SS
Decoupling capacitors
to all devices.
( All specifications of this device are subject to change without notice.)
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
1
SMART
Pin Name
A0~A9
A0~A10
A0~A8
A0~A11
DQ0~DQ31
RAS0#~RAS3#
CAS0#~CAS3#
WE#
PD1~PD4
V
CC
V
SS
NC
®
SM5320480UUXUUU
January 16, 1997
Modular Technologies
Pin
No.
Column Addresses
for 2K Refresh Module
Row Addresses
for 2K Refresh Module
Column Addresses for 4K
Refresh Module
Row Addresses for 4K
Refresh Module
Data Inputs/Outputs
Row Address Strobes
Column Address Strobes
Write Enable
Presence Detects
Power Supply
Ground
No Connection
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Pin
Designation
V
SS
DQ0
DQ16
DQ1
DQ17
DQ2
DQ18
DQ3
DQ19
V
CC
NC
A0
A1
A2
A3
A4
A5
A6
A10
DQ4
DQ20
DQ5
DQ21
DQ6
DQ22
DQ7
DQ23
A7
A11 (Note)
V
CC
A8
A9
RAS3#
RAS2#
NC
NC
Pin
No.
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Pin
Designation
NC
NC
V
SS
CAS0#
CAS2#
CAS3#
CAS1#
RAS0#
RAS1#
NC
WE#
NC
DQ8
DQ24
DQ9
DQ25
DQ10
DQ26
DQ11
DQ27
DQ12
DQ28
V
CC
DQ29
DQ13
DQ30
DQ14
DQ31
DQ15
NC
PD1
PD2
PD3
PD4
NC
V
SS
Presence Detect Pins
Access Time
60ns
70ns
80ns
V
SS
V
SS
V
SS
NC
NC
NC
NC
NC
V
SS
NC
NC
V
SS
Pin
PD1
PD2
PD3
PD4
Note : A11 is NC for 2K refresh module.
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
2
SMART
FPM & EDO-based Modules
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperature
Short Circuit Output Current
®
SM5320480UUXUUU
January 16, 1997
Modular Technologies
DC Characteristics
Symbol
V
T
P
T
T
opr
T
stg
I
OS
Vcc=3.3V
- 0.5 to +4.6
8
0 to +70
- 55 to +150
50
Ratings
Vcc=5.0V
- 1.0 to +7.0
8
0 to +70
- 55 to +150
50
Unit
V
W
°
C
°
C
mA
Recommended DC Operating Conditions
(T
A
= 0 to +70
°
C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Capacitance
(V
CC
= 3.3V
±
10%/5.0V
±
10%, T
A
= +25
°
C)
Parameter
Input Capacitance (Address)
Input Capacitance (RAS#, CAS#)
IInput Capacitance (WE#)
Input/Output Capacitance (DQ0~DQ31)
Notes : Capacitance is sampled per Mil-Std-883.
Symbol
C
I1
C
I2
C
I3
C
I/O
Max
50
24
66
24
Unit
pF
pF
pF
pF
Symbol
V
CC
V
SS
V
IH
V
IL
Vcc=3.3V
Min
Typ
Max
3.0
3.3
3.6
0
2.0
-0.3
0
-
-
0
V
CC
+0.3
0.8
Vcc=5.0V
Min
Typ
Max
4.5
5.0
5.5
0
2.4
-1.0
0
-
-
0
V
CC
+1.0
0.8
Unit
V
V
V
V
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
3
SMART
®
SM5320480UUXUUU
January 16, 1997
Modular Technologies
DC Characteristics (cont’d)
(V
CC
= 3.3V
±
10%, V
SS
= 0V, T
A
= 0 to +70
°
C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
CC
+0.3V
0V
≤
V
out
≤
V
CC
D
out
= Disable
High I
out
= -2mA
Low I
out
= 2mA
2.4
-
-
0.4
2.4
-
-
0.4
2.4
-
-
0.4
V
V
60ns
70ns
80ns
Min Max Min Max Min Max
-80
80 -80
80
-80 80
-20
20
-20
20
-20
20
Unit
µ
A
µ
A
(V
CC
= 5.0V
±
10%, V
SS
= 0V, T
A
= 0 to +70
°
C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
CC
+0.5V
0V
≤
V
out
≤
V
CC
D
out
= Disable
High I
out
= -5mA
Low I
out
= 4.2mA
2.4
-
-
0.4
2.4
-
-
0.4
2.4
-
-
0.4
V
V
60ns
70ns
Min Max Min Max
-80
80 -80
80
-20
20
-20
20
80ns
Min Max
-80 80
-20
20
Unit
µ
A
µ
A
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
4
SMART
FPM-based Modules
®
SM5320480UUXUUU
January 16, 1997
Modular Technologies
DC Characteristics (cont’d)
(V
CC
= 3.3V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Operating Current
Symbol
I
CC1
Test Conditions
RAS#, CAS# cycling;
t
RC
= min.
LVTTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=VIH; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=VIL, CAS#, Address
cycling @ t
PC
=min.
Refresh
2K
4K
60ns
408
328
16
Max.
70ns
368
288
16
Unit
80ns
328
248
16
mA
mA
mA
Note
1, 2
1, 2
Standby Current
I
CC2
8
2K
4K
2K
4K
2K
4K
408
328
408
328
328
288
8
368
288
368
288
288
248
8
328
248
328
248
248
208
mA
mA
mA
mA
mA
mA
mA
2
2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Fast Page Mode
Current
I
CC3
I
CC4
I
CC5
1, 3
1, 3
(V
CC
= 5.0V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Operating Current
Symbol
I
CC1
Test Conditions
RAS#, CAS# cycling;
t
RC
= min.
TTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=V
IH
; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=V
IL
, CAS#, Address
cycling @ t
PC
=min.
Refresh
2K
4K
60ns
408
328
16
Max.
70ns
368
288
16
Unit
80ns
328
248
16
mA
mA
mA
Note
1, 2
1, 2
Standby Current
I
CC2
8
2K
4K
2K
4K
2K
4K
408
328
408
328
328
288
8
368
288
368
288
288
248
8
328
248
328
248
248
208
mA
mA
mA
mA
mA
mA
mA
2
2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Fast Page Mode
Current
Notes:
I
CC3
I
CC4
I
CC5
1, 3
1, 3
1. Values depend on output load condition when the device is selected. Maximum values are specified at the output open condition.
2. Address can be changed once or less while RAS# = V
IL
.
3. Address can be changed once or less while CAS# = V
IH
.
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
5
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SM532048004X3S8相似产品对比

SM532048004X3S8 SM532048084X3S6 SM532048014X3S6 SM532048002X3S6 SM532048094X3G6
描述 DRAM DRAM DRAM DRAM DRAM
厂商名称 SMART Modular Technology Inc SMART Modular Technology Inc SMART Modular Technology Inc SMART Modular Technology Inc SMART Modular Technology Inc
Reach Compliance Code unknown unknown unknown unknow unknow
ECCN代码 - - EAR99 EAR99 EAR99

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