RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, C Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-6
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | NEC(日电) |
| 包装说明 | THIN, ULTRA SUPER MINIMOLD PACKAGE-6 |
| Reach Compliance Code | compliant |
| 最大集电极电流 (IC) | 0.035 A |
| 基于收集器的最大容量 | 0.3 pF |
| 集电极-发射极最大电压 | 3.3 V |
| 配置 | SEPARATE, 2 ELEMENTS |
| 最高频带 | C BAND |
| JESD-30 代码 | R-PDSO-F6 |
| JESD-609代码 | e0 |
| 元件数量 | 2 |
| 端子数量 | 6 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | NPN |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | TIN LEAD |
| 端子形式 | FLAT |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 21000 MHz |
| UPA892TC-T1FB | UPA892TC-FB-A | UPA892TC-FB | UPA892TC-T1FB-A | |
|---|---|---|---|---|
| 描述 | RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, C Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-6 | RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, C Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-6 | RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, C Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-6 | RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, C Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-6 |
| 是否Rohs认证 | 不符合 | 符合 | 不符合 | 符合 |
| 包装说明 | THIN, ULTRA SUPER MINIMOLD PACKAGE-6 | SMALL OUTLINE, R-PDSO-F6 | THIN, ULTRA SUPER MINIMOLD PACKAGE-6 | THIN, ULTRA SUPER MINIMOLD PACKAGE-6 |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| 最大集电极电流 (IC) | 0.035 A | 0.035 A | 0.035 A | 0.035 A |
| 基于收集器的最大容量 | 0.3 pF | 0.3 pF | 0.3 pF | 0.3 pF |
| 集电极-发射极最大电压 | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 配置 | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS |
| 最高频带 | C BAND | C BAND | C BAND | C BAND |
| JESD-30 代码 | R-PDSO-F6 | R-PDSO-F6 | R-PDSO-F6 | R-PDSO-F6 |
| JESD-609代码 | e0 | e6 | e0 | e6 |
| 元件数量 | 2 | 2 | 2 | 2 |
| 端子数量 | 6 | 6 | 6 | 6 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 260 |
| 极性/信道类型 | NPN | NPN | NPN | NPN |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES |
| 端子面层 | TIN LEAD | TIN BISMUTH | TIN LEAD | TIN BISMUTH |
| 端子形式 | FLAT | FLAT | FLAT | FLAT |
| 端子位置 | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 10 |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 21000 MHz | 21000 MHz | 21000 MHz | 21000 MHz |
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