电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

TSOP1156KS1

产品描述Photo IC, 3 Pin,
产品类别光电子/LED    光电   
文件大小280KB,共7页
制造商Vishay Telefunken (Vishay)
官网地址http://www.vishay.com
下载文档 详细参数 选型对比 全文预览

TSOP1156KS1概述

Photo IC, 3 Pin,

TSOP1156KS1规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Vishay Telefunken (Vishay)
Reach Compliance Codeunknown
JESD-609代码e0
端子数量3
端子面层Tin/Lead (Sn/Pb)

TSOP1156KS1文档预览

VISHAY
TSOP11..KS1
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP11..KS1 - series are miniaturized receivers
for infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. The main benefit is the
operation with short burst transmission codes and
high data rates.
12797
Features
• Photo detector and preamplifier in one package
• Internal filter for PCM frequency
• Improved shielding against electrical field distur-
bance
• TTL and CMOS compatibility
• Output active low
• Low power consumption
• High immunity against ambient light
Parts Table
Part
TSOP1130KS1
TSOP1133KS1
TSOP1136KS1
TSOP1137KS1
TSOP1138KS1
TSOP1140KS1
TSOP1156KS1
30 kHz
33 kHz
36 kHz
36.7 kHz
38 kHz
40 kHz
56 kHz
Carrier Frequency
Special Features
• Enhanced data rate up to 4000 bit/s
• Operation with short bursts possible (≥ 6 cycles/
burst)
Application Circuit
Transmitter
TSOPxxxx
with
TSALxxxx
Circuit
R
1
= 100
V
S
C
1
=
4.7 µF
V
O
+V
S
Block Diagram
2
25 kΩ
Input
PIN
AGC
Band
Pass
Demo-
dulator
V
S
OUT
GND
µC
GND
3
OUT
R
1
+ C
1
recommended to suppress power supply
disturbances.
The output voltage should not be hold continuously at
a voltage below V
O =
3.3 V by the external circuit.
1
Control Circuit
GND
Document Number 82009
Rev. 9, 15-Oct-2002
www.vishay.com
1
TSOP11..KS1
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Voltage
Supply Current
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
(T
amb
85 °C)
t
5s
(Pin 2)
(Pin 2)
(Pin 3)
(Pin 3)
Test condition
Symbol
V
S
I
S
V
O
I
O
T
j
T
stg
T
amb
P
tot
T
sd
VISHAY
Value
- 0.3 to +
6.0
5
- 0.3 to +
6.0
5
100
- 25 to + 85
- 25 to + 85
50
260
Unit
V
mA
V
mA
°C
°C
°C
mW
°C
Electrical and Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Current (Pin 2)
Supply Voltage (Pin 2)
Transmission Distance
Output Voltage Low (Pin 3)
Irradiance (30 - 40 kHz)
E
v
= 0, test signal see fig.3, IR
diode TSAL6200, I
F
= 0.4 A
I
OSL
= 0.5 mA, E
e
= 0.7 mW/m
2
, f
= f
o
, test signal see fig.1
Test signal see fig.1
Test signal see fig.3
Irradiance (56 kHz)
Test signal see fig.1
Test signal see fig.3
Irradiance
Directivity
Test signal see fig.1
Angle of half transmission distance
Test condition
V
S
= 5 V, E
v
= 0
V
S
= 5 V, E
v
= 40 klx, sunlight
Symbol
I
SD
I
SH
V
S
d
V
OSL
E
e min
E
e min
E
e min
E
e min
E
e max
ϕ
1/2
30
±
45
0.4
0.35
0.45
0.40
4.5
35
250
0.6
0.5
0.7
0.6
Min
0.8
Typ.
1.2
1.5
5.5
Max
1.5
Unit
mA
mA
V
m
mV
mW/m
2
mW/m
2
mW/m
2
mW/m
2
W/m
2
deg
Typical Characteristics
(T
amb
= 25°C unless otherwise specified)
E
e
Optical Test Signal
(IR diode TSAL6200, I
F
=0.4 A, N=6 pulses, f=f
0
, T=10 ms)
t
po
– Output Pulse Width ( ms )
0.35
0.30
Output Pulse
0.25
0.20
0.15
0.10
0.05
0.00
0.1
16907
t
pi
*)
T
*) t
pi
w
6/fo is recommended for optimal function
Output Signal
V
O
V
OH
V
OL
t
d1 )
1)
2)
t
Input Burst Duration
l
= 950 nm,
optical test signal, fig.1
14337
3/f
0
< t
d
< 9/f
0
t
pi
– 4/f
0
< t
po
< t
pi
+ 6/f
0
t
t
po2 )
1.0
10.0
100.0 1000.010000.0
E
e
– Irradiance ( mW/m
2
)
Figure 1. Output Function
Figure 2. Pulse Length and Sensitivity in Dark Ambient
www.vishay.com
2
Document Number 82009
Rev. 9, 15-Oct-2002
VISHAY
TSOP11..KS1
Vishay Semiconductors
E
e
Optical Test Signal
E
e min
– Threshold Irradiance ( mW/m
2
)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
Ambient,
l
= 950 nm
Correlation with ambient light sources:
10W/m
2
^1.4klx
(Std.illum.A,T=2855K)
10W/m
2
^8.2klx
(Daylight,T=5900K)
600
ms
T = 60 ms
Output Signal,
( see Fig.4 )
600
ms
t
94 8134
V
O
V
OH
V
OL
T
on
T
off
t
16911
0.10
1.00
10.00
(W/m
2
)
100.00
E – Ambient DC Irradiance
Figure 3. Output Function
Figure 6. Sensitivity in Bright Ambient
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
l
= 950 nm,
optical test signal, fig.3
Toff
Ton
E
e min
– Threshold Irradiance ( mW/m
2
)
T
on
,T
off
– Output Pulse Width ( ms )
1.0
2.0
f = f
o
f = 10 kHz
1.0
1.5
f = 1 kHz
0.5
f = 100 Hz
0.0
0.1
1.0
10.0
100.0
1000.0
10.0
100.0 1000.010000.0
mW/m
2
)
16912
16910
E
e
– Irradiance (
DV
sRMS
– AC Voltage on DC Supply Voltage (mV)
Figure 4. Output Pulse Diagram
Figure 7. Sensitivity vs. Supply Voltage Disturbances
E
e min
– Threshold Irradiance ( mW/m
2
)
1.2
E
e min
/ E
e
– Rel. Responsivity
2.0
f(E) = f
0
1.6
1.2
0.8
0.4
0.0
0.0
0.4
0.8
1.2
1.6
2.0
E – Field Strength of Disturbance ( kV/m )
1.0
0.8
0.6
0.4
0.2
0.0
0.7
f = f
0
"5%
Df
( 3dB ) = f
0
/7
0.9
1.1
1.3
16926
f/f
0
– Relative Frequency
94 8147
Figure 5. Frequency Dependence of Responsivity
Figure 8. Sensitivity vs. Electric Field Disturbances
Document Number 82009
Rev. 9, 15-Oct-2002
www.vishay.com
3
TSOP11..KS1
Vishay Semiconductors
VISHAY
1.0
0.9
Max. Envelope Duty Cycle
0
10
20
30
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100
120
95 11340p2
40
1.0
0.9
0.8
f = 38 kHz, E
e
= 2
mW/m
2
0.7
50
60
70
80
0.6
0.6
0.4
0.2
0
0.2
0.4
d
rel
– Relative Transmission Distance
16914
Burst Length ( number of cycles / burst )
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Horizontal Directivity
ϕ
x
E
e min
– Threshold Irradiance ( mW/m
2
)
0.6
0.5
0.4
1.0
0.3
0.2
0.1
0.0
–30 –15
0.9
0.8
0.7
Sensitivity in dark ambient
0
10
20
30
40
50
60
70
80
0
15
30
45
60
75
90
95 11339p2
0.6
16918
T
amb
– Ambient Temperature ( C )
0.6
0.4
0.2
0
0.2
0.4
d
rel
– Relative Transmission Distance
Figure 10. Sensitivity vs. Ambient Temperature
Figure 13. Vertical Directivity
ϕ
y
S (
l
)
rel
– Relative Spectral Sensitivity
1.2
1.0
0.8
0.6
0.4
0.2
0
750
Suitable Data Format
The circuit of the TSOP11..KS1 is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpassfilter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
• Burst length should be 6 cycles/burst or longer.
• After each burst which is between 6 cycles and 70
cycles a gap time of at least 10 cycles is necessary.
• For each burst which is longer than 1.8 ms a corre-
sponding gap time is necessary at some time in the
850
950
1050
1150
94 8408
l
– Wavelength ( nm )
Figure 11. Relative Spectral Sensitivity vs. Wavelength
www.vishay.com
4
Document Number 82009
Rev. 9, 15-Oct-2002
VISHAY
data stream. This gap time should have at least same
length as the burst.
• Up to 2200 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code, Toshiba Micom Format, Sharp Code, RC5
Code, RC6 Code, RCMM Code, R-2000 Code,
RECS-80 Code.
When a disturbance signal is applied to the
TSOP11..KS1 it can still receive the data signal. How-
ever the sensitivity is reduced to that level that no
unexpected pulses will occure.
Some examples for such disturbance signals which
are suppressed by the TSOP11..KS1 are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other fre-
quency
• Signals from fluorescent lamps with electronic bal-
last (an example of the signal modulation is in the fig-
ure below).
TSOP11..KS1
Vishay Semiconductors
IR Signal
IR Signal from fluorescent
lamp with low modulation
0
16920
5
10
Time ( ms )
15
20
Figure 14. IR Signal from Fluorescent Lamp with low Modulation
Document Number 82009
Rev. 9, 15-Oct-2002
www.vishay.com
5

TSOP1156KS1相似产品对比

TSOP1156KS1 TSOP1133KS1 TSOP1130KS1 TSOP1140KS1 TSOP1137KS1 TSOP1136KS1 TSOP1138KS1
描述 Photo IC, 3 Pin, Photo IC, 3 Pin, Photo IC, 3 Pin, Photo IC, 3 Pin, Photo IC, 3 Pin, Photo IC, 3 Pin, Photo IC, 3 Pin,
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 Vishay Telefunken (Vishay) Vishay Telefunken (Vishay) Vishay Telefunken (Vishay) Vishay Telefunken (Vishay) Vishay Telefunken (Vishay) Vishay Telefunken (Vishay) Vishay Telefunken (Vishay)
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
JESD-609代码 e0 e0 e0 e0 e0 e0 e0
端子数量 3 3 3 3 3 3 3
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
基础问题 STM8仿真
请问一下给各位,我以前没用过仿真器,前段时间买了块STM8S的开发板带仿真的。我奇怪的是每次仿真时程序好像就下载进单片机了。意思就是我仿真的时候再退出仿真重新启动一下电源,单片机就是按 ......
lijiayon stm32/stm8
TI常用例程
TI常用例程...
maker 单片机
弱弱的问一句:以后Beaglebone等开发板试用的活动还会有吗?
如题。感觉跟大家一起交流,搞嵌入式比较有氛围。beaglebone开发板售价89美元太不便宜了。。。学生吃不消啊。。我希望多搞一些对大学生的动手的活动,应该会不错的。等这个活动结束之后,谁要是 ......
qinkaiabc DSP 与 ARM 处理器
关于在RAM中运行的程序占用空间大小的问题???
现在用的单片机没有片上FLASH,外接了一个SPI接口的FLASH,在不仿真的情况下上电后程序会从flash中加载到ram中运行,如果仿真的话会自动在RAM中运行。程序在RAM中运行的时候,占多大RAM空间 ......
liyang121316 ARM技术
实用五金手册
好东西要大家一起分享 ...
缥缈轮回 为我们提建议&公告
脉冲注入阶段,这个t1应该是整个周期还是高电平的?
有些乱了,在同一篇文章中还有一个t1,是高电平,脉冲注入阶段但注入脉感觉是指整个脉冲 ...
西里古1992 模拟电子

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1859  2550  806  1720  2311  13  8  23  56  42 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved