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TSOP1156TR

产品描述Photo IC,
产品类别光电子/LED    光电   
文件大小172KB,共8页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 选型对比 全文预览

TSOP1156TR概述

Photo IC,

TSOP1156TR规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Vishay(威世)
Reach Compliance Codeunknown
JESD-609代码e3
安装特点THROUGH HOLE MOUNT
最高工作温度85 °C
最低工作温度-25 °C
最大压摆率0.0015 mA
标称供电电压5 V
表面贴装NO
端子面层Tin (Sn) - with Silver (Ag) barrier

TSOP1156TR文档预览

TSOP11..
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP11.. - series are miniaturized receivers for
infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. The main benefit is the
operation with short burst transmission codes and
high data rates.
1
2
3
94 8691
Features
• Photo detector and preamplifier in one
package
• Internal filter for PCM frequency
• Improved shielding against electrical
field disturbance
• TTL and CMOS compatibility
• Output active low
• Low power consumption
• High immunity against ambient light
Special Features
• Enhanced data rate of 4000 bit/s
• Operation with short bursts possible (≥ 6 cycles/
burst)
e3
Parts Table
Part
TSOP1130
TSOP1133
TSOP1136
TSOP1137
TSOP1138
TSOP1140
TSOP1156
Carrier Frequency
30 kHz
33 kHz
36 kHz
36.7 kHz
38 kHz
40 kHz
56 kHz
Block Diagram
16831
Application Circuit
2
25 kΩ
Input
PIN
AGC
Band
Pass
Demo-
dulator
V
S
16842
3
OUT
Circuit
Transmitter
TSOPxxxx
with
TSALxxxx
R
1
= 100
V
S
C
1
=
4.7 µF
V
O
+V
S
1
Control Circuit
GND
OUT
GND
µC
GND
R
1
+ C
1
recommended to suppress power supply
disturbances.
The output voltage should not be hold continuously at
a voltage below V
O =
3.3 V by the external circuit.
Document Number 82006
Rev. 1.12, 27-Jan-05
www.vishay.com
1
TSOP11..
Vishay Semiconductors
Absolute Maximum Ratings
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Voltage
Supply Current
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
(T
amb
85 °C)
t
10 s, > 1 mm from case
(Pin 2)
(Pin 2)
(Pin 3)
(Pin 3)
Test condition
Symbol
V
S
I
S
V
O
I
O
T
j
T
stg
T
amb
P
tot
T
sd
Value
- 0.3 to + 6.0
5
- 0.3 to + 6.0
5
100
- 25 to + 85
- 25 to + 85
50
260
Unit
V
mA
V
mA
°C
°C
°C
mW
°C
Electrical and Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Current (Pin 2)
Supply Voltage (Pin 2)
Transmission Distance
Output Voltage Low (Pin 3)
Minimum Irradiance (30 - 40
kHz)
Minimum Irradiance (56 kHz)
E
v
= 0, test signal see fig. 3, IR
diode TSAL6200, I
F
= 0.4 A
I
OSL
= 0.5 mA, E
e
= 0.7 mW/m
2
,
f = f
o
, test signal see fig.1
Test signal see fig.1
Test signal see fig.3
Test signal see fig.1
Test signal see fig.3
Maximum Irradiance
Directivity
Test signal see fig.1
Angle of half transmission
distance
Test condition
V
S
= 5 V, E
v
= 0
V
S
= 5 V, E
v
= 40 klx, sunlight
Symbol
I
SD
I
SH
V
S
d
V
OSL
E
e min
E
e min
E
e min
E
e min
E
e max
ϕ
1/2
30
± 45
0.4
0.35
0.45
0.40
4.5
35
250
0.6
0.5
0.7
0.6
Min
0.8
Typ.
1.2
1.5
5.5
Max
1.5
Unit
mA
mA
V
m
mV
mW/m
2
mW/m
2
mW/m
2
mW/m
2
W/m
2
deg
www.vishay.com
2
Document Number 82006
Rev. 1.12, 27-Jan-05
TSOP11..
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
E
e
Optical Test Signal
(IR diode TSAL6200, I
F
=0.4 A, N=6 pulses, f=f
0
, T=10 ms)
T
on
,T
off
– Output Pulse Width ( ms )
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
l
= 950 nm,
optical test signal, fig.3
Toff
Ton
t
pi
*)
T
*) t
pi
w
6/fo is recommended for optimal function
Output Signal
V
O
V
OH
V
OL
t
d1 )
1)
2)
t
14337
3/f
0
< t
d
< 9/f
0
t
pi
– 4/f
0
< t
po
< t
pi
+ 6/f
0
t
t
po2 )
10.0
100.0 1000.010000.0
16910
E
e
– Irradiance ( mW/m
2
)
Figure 1. Output Function
Figure 4. Output Pulse Diagram
0.35
E
e min
/ E
e
– Rel. Responsivity
t
po
– Output Pulse Width ( ms )
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.7
16926
0.30
Output Pulse
0.25
0.20
0.15
0.10
0.05
0.00
0.1
l
= 950 nm,
optical test signal, fig.1
Input Burst Duration
f = f
0
"5%
Df
( 3dB ) = f
0
/7
0.9
1.1
1.3
1.0
10.0
100.0 1000.010000.0
16907
E
e
– Irradiance ( mW/m
2
)
f/f
0
– Relative Frequency
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Figure 5. Frequency Dependence of Responsivity
E
e
Optical Test Signal
E
e min
– Threshold Irradiance ( mW/m
2
)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
Ambient,
l
= 950 nm
Correlation with ambient light sources:
10W/m
2
^1.4klx
(Std.illum.A,T=2855K)
10W/m
2
^8.2klx
(Daylight,T=5900K)
600
ms
T = 60 ms
Output Signal,
( see Fig.4 )
600
ms
t
94 8134
V
O
V
OH
V
OL
T
on
T
off
t
16911
0.10
1.00
10.00
(W/m
2
)
100.00
E – Ambient DC Irradiance
Figure 3. Output Function
Figure 6. Sensitivity in Bright Ambient
Document Number 82006
Rev. 1.12, 27-Jan-05
www.vishay.com
3
TSOP11..
Vishay Semiconductors
E
e min
– Threshold Irradiance ( mW/m
2
)
E
e min
– Threshold Irradiance ( mW/m
2
)
2.0
f = f
o
f = 10 kHz
1.0
0.6
0.5
0.4
0.3
0.2
0.1
0.0
–30 –15 0
15 30 45 60 75
T
amb
– Ambient Temperature ( C )
Sensitivity in dark ambient
1.5
f = 1 kHz
0.5
f = 100 Hz
0.0
0.1
1.0
10.0
100.0
1000.0
DV
sRMS
– AC Voltage on DC Supply Voltage (mV)
90
16912
16918
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Figure 10. Sensitivity vs. Ambient Temperature
E
e min
– Threshold Irradiance ( mW/m
2
)
2.0
f(E) = f
0
1.6
1.2
0.8
0.4
0.0
0.0
0.4
0.8
1.2
1.6
2.0
E – Field Strength of Disturbance ( kV/m )
S (
l
)
rel
– Relative Spectral Sensitivity
1.2
1.0
0.8
0.6
0.4
0.2
0
750
850
950
1050
1150
94 8147
94 8408
l
– Wavelength ( nm )
Figure 8. Sensitivity vs. Electric Field Disturbances
Figure 11. Relative Spectral Sensitivity vs. Wavelength
1.0
0.9
Max. Envelope Duty Cycle
10°
20°
30°
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100
120
95 11340p2
40°
1.0
0.9
0.8
f = 38 kHz, E
e
= 2
mW/m
2
0.7
50°
60°
70°
80°
0.6
0.4 0.2
0
0.2
0.4 0.6
d
rel
-
Relative Transmission Distance
16914
Burst Length ( number of cycles / burst )
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Horizontal Directivity
ϕ
x
www.vishay.com
4
Document Number 82006
Rev. 1.12, 27-Jan-05
TSOP11..
Vishay Semiconductors
• Continuous signal at 38 kHz or at any other fre-
quency
• Signals from fluorescent lamps with electronic bal-
last (an example of the signal modulation is in the fig-
ure below).
10°
20°
30°
40°
1.0
0.9
0.8
0.7
50°
60°
70°
IR Signal
80°
0.6 0.4 0.2
0
0.2
0.4 0.6
d
rel
-
Relative Transmission Distance
95 11339p2
Figure 13. Vertical Directivity
ϕ
y
IR Signal from fluorescent
lamp with low modulation
Suitable Data Format
The circuit of the TSOP11.. is designed in that way
that unexpected output pulses due to noise or distur-
bance signals are avoided. A bandpass filter, an inte-
grator stage and an automatic gain control are used
to suppress such disturbances.
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
• Burst length should be 6 cycles/burst or longer.
• After each burst which is between 6 cycles and 70
cycles a gap time of at least 10 cycles is necessary.
• For each burst which is longer than 1.8 ms a corre-
sponding gap time is necessary at some time in the
data stream. This gap time should have at least same
length as the burst.
• Up to 2200 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code, Toshiba Micom Format, Sharp Code, RC5
Code, RC6 Code, RCMM Code, R-2000 Code,
RECS-80 Code.
When a disturbance signal is applied to the TSOP11..
it can still receive the data signal. However the sensi-
tivity is reduced to that level that no unexpected
pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP11.. are:
• DC light (e.g. from tungsten bulb or sunlight)
16920
0
5
10
Time ( ms )
15
20
Figure 14. IR Signal from Fluorescent Lamp with low Modulation
Document Number 82006
Rev. 1.12, 27-Jan-05
www.vishay.com
5

TSOP1156TR相似产品对比

TSOP1156TR TSOP1140TT TSOP1137TR TSOP1136TT
描述 Photo IC, Photo IC, Photo IC, Photo IC,
是否Rohs认证 符合 符合 符合 符合
厂商名称 Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世)
Reach Compliance Code unknown unknown unknown unknown
JESD-609代码 e3 e3 e3 e3
安装特点 THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT
最高工作温度 85 °C 85 °C 85 °C 85 °C
最低工作温度 -25 °C -25 °C -25 °C -25 °C
最大压摆率 0.0015 mA 0.0015 mA 0.0015 mA 0.0015 mA
标称供电电压 5 V 5 V 5 V 5 V
表面贴装 NO NO NO NO
端子面层 Tin (Sn) - with Silver (Ag) barrier Tin (Sn) - with Silver (Ag) barrier Tin (Sn) - with Silver (Ag) barrier Tin (Sn) - with Silver (Ag) barrier
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