Advanced Technical Information
MWI 450-17 E9
IGBT Modules
Sixpack
2
15
28
16
17
11/12
29
13
14
1
18
19
3
20
21
22
9/10
23
24
5
4
25
26
27
7/8
6
I
C60
= 440 A
V
CES
= 1700 V
V
CE(sat) typ.
= 2.5 V
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C60
I
C80
RBSOA
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 60°C
T
C
= 80°C
R
G
= 3.3
Ω;
T
VJ
= 125°C
Clamped inductive load; L = 100 µH
V
CE
= 1000 V; V
GE
=
±
15 V; R
G
= 3.3
Ω;
T
VJ
= 125°C; non-repetitive; V
CEmax
< V
CES
T
C
= 25°C
Conditions
Conditions
T
VJ
= 25°C to 125°C
Maximum Ratings
1700
±
20
540
440
375
I
CM
= 750
V
CEK
≤
V
CES
10
2.2
V
V
A
A
A
A
µs
kW
Features
•
NPT
3
IGBT technology
•
low saturation voltage
•
low switching losses
•
square RBSOA, no latch up
•
high short circuit capability
•
positive temperature coefficient for
easy parallelling
•
MOS input, voltage controlled
•
ultra fast free wheeling diodes
•
solderable pins for PCB mounting
•
package with copper base plate
Advantages
•
space savings
•
reduced protection circuits
•
package designed for wave soldering
Typical Applications
•
AC motor control
•
AC servo and robot drives
•
power supplies
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
2.6
3.0
4.5
9
3.0
3.6
6.5
V
V
V
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
I
C
= 450 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 30 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V
1 mA
26 mA
1.5
µA
ns
ns
ns
ns
mJ
mJ
nF
µC
0.057 K/W
416
Inductive load, T
VJ
= 125°C
V
CE
= 900 V; I
C
= 450 A
V
GE
= ±15 V; R
G
= 3.3
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 900 V; V
GE
= 15 V; I
C
= 300 A
170
110
480
110
150
90
33
2.6
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1-3
Advanced Technical Information
MWI 450-17 E9
Diodes
Symbol
I
F80
I
FRM
Conditions
T
C
= 80°C
t
p
= 1 ms
Maximum Ratings
450
900
A
A
Symbol
V
F
I
RM
R
thJC
Conditions
I
F
= 450 A; V
GE
= 0 V; T
VJ
= 25°C
I
F
= 450 A; di
F
/dt = 3500 A/µs;
T
VJ
= 125°C; V
R
= 1200 V
Characteristic Values
min.
typ. max.
2.2
400
0.075
V
A
K/W
Temperature Sensor NTC
Symbol
R
25
B
25/50
Conditions
T = 25°C
Characteristic Values
min.
typ. max.
4.75
5.0
3375
5.25
kΩ
K
Module
Symbol
T
VJ
T
JM
T
stg
V
ISOL
M
d
Conditions
operating
Maximum Ratings
-40...+125
+150
-40...+125
3400
3-6
3-6
°C
°C
°C
V~
Nm
Nm
I
ISOL
≤
1 mA; 50/60 Hz
Mounting torque (M5)
Terminal connection torque (M6)
Conditions
Resistance terminal to chip
Creepage distance on surface
Strike distance in air
with heatsink compound
12.7
10
Symbol
R
term-chip
*
)
d
S
d
A
R
thCH
Weight
Characteristic Values
min.
typ. max.
0.55
mΩ
mm
mm
0.01
900
K/W
g
*
)
V = V
CE(sat)
+ 2x R
term-chip
· I
C
resp. V = V
F
+ 2x R
term-chip
· I
F
© 2004 IXYS All rights reserved
2-3
416
Advanced Technical Information
MWI 450-17 E9
Dimensions in mm (1 mm = 0.0394")
=
tolerance for all dimensions:
© 2004 IXYS All rights reserved
3-3
416
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