140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS2216
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
Features
•
•
•
•
•
•
•
1.2 – 1.4 GHz
28 VOLTS
INFINITE VSWR CAPABILITY @ RATED CONDITIONS
P
OUT
= 5.5 WATTS
G
P
= 10 dB MINIMUM
INPUT/OUTPUT MATCHING
COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2216 is a NPN silicon bipolar transistor designed for
L-Band pulsed radar applications.
Internal impedance matching assures consistent broadband
performance and gold metalization provides maximum reliability
under severe operation conditions.
The MS2216 utilizes an emitter ballasted die geometry for superior
thermal stability under a wide range of pulse widths and duty
cycles.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25° C)
°
Symbol
P
DISS
I
C
Vcc
T
J
T
STG
Parameter
Power Dissipation
Device Current
Collector-Supply Voltage
Junction Temperature
Storage Temperature
Value
16.7
0.82
32
200
-65 to +200
Unit
W
A
V
°
C
°
C
Thermal Data
R
TH(J-C)
Junction-case Thermal Resistance*
9.0
°
C/W
MSCXXXX.PDF 01-19-99
MS2216
STATIC
ELECTRICAL SPECIFICATIONS (Tcase = 25° C)
(Tcase 25
°
Symbol
BV
CBO
BV
CER
BV
EBO
I
CES
HFE
I
C
= 5mA
I
E
= 5mA
I
C
= 1mA
V
BE
= 0V
V
CE
= 5V
Test Conditions
Min.
I
E
= 0 mA
R
BE
= 10Ω
Ω
I
C
= 0mA
V
CE
= 28V
I
C
= 500mA
48
48
3.5
---
30
Value
Typ.
---
---
---
---
---
Max.
---
---
---
1.0
300
Unit
V
V
V
mA
---
DYNAMIC
Symbol
P
OUT
η
C
G
P
Condition
s
f = 1.2 – 1.4GHz
f = 1.2 – 1.4GHz
f = 1.2 – 1.4GHz
Test Conditions
Min.
P
IN
= 0.55W
P
IN
= 0.55W
P
IN
= 0.55W
Vcc = 28V
Vcc = 28V
Vcc = 28V
5.5
47
10
Value
Typ.
---
---
---
Max.
---
---
---
Unit
W
%
dB
Pulse Width = 1000µs
µ
Duty Cycle = 10%
IMPEDANCE DATA
FREQ
1.2 GHz
1.3 GHz
1.4 GHz
P
IN
= 0.55W
V
CC
= 28V
Z
IN
(
Ω)
10.5 + j9.0
9.5 + j8.0
8.5 + j7.0
Z
CL
(
Ω)
9.0 + j3.0
6.5 + j2.0
6.0 + j1.0
MSCXXXX.PDF 01-19-99
MS2216
PACKAGE MECHANICAL DATA
MSCXXXX.PDF 01-19-99
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
