Bulletin PD-2.397 rev. G 07/04
10BQ040
SCHOTTKY RECTIFIER
1 Amp
I
F(AV)
= 1 Amp
V
R
= 40V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular waveform
V
RRM
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 1.0 Apk, T
J
=125°C
range
Description/ Features
Units
A
V
A
V
°C
The 10BQ040 surface-mount Schottky rectifier has been de-
signed for applications requiring low forward drop and very
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
10BQ040
1.0
40
430
0.49
- 55 to 150
Case Styles
10BQ040
SMB
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1
10BQ040
Bulletin PD-2.397 rev. G 07/04
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
10BQ040
40
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
I
FSM
E
AS
I
AR
Max. Peak One Cycle Non-Repetitive
Surge Current
Non- Repetitive Avalanche Energy
Repetitive Avalanche Current
10BQ
1.0
430
45
3.0
1.0
Units Conditions
A
A
50% duty cycle @ T
L
= 112 °C, rectangular wave form
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
mJ
A
T
J
= 25 °C, I
AS
= 1A, L = 6mH
Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
max. Va = 1.5 x Vr typical
Following any rated
load condition and
with rated V
RRM
applied
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
* See Fig. 1
(1)
10BQ
0.53
0.70
0.49
0.64
Units
V
V
V
V
mA
mA
pF
nH
V/ µs
@ 1A
@ 2A
@ 1A
@ 2A
T
J
= 25 °C
T
J
= 125 °C
Conditions
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
I
RM
C
T
L
S
Max. Reverse Leakage Current (1)
* See Fig. 2
Typical Junction Capacitance
Typical Series Inductance
(Rated V
R
)
0.1
4
80
2.0
10000
V
R
= 5V
DC
, (test signal range 100kHz to 1MHz) 25°C
Measured lead to lead 5mm from package body
dv/dt Max. Volatge Rate of Charge
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range (*)
Max. Storage Temperature Range
10BQ
- 55 to 150
- 55 to 150
Units
°C
°C
Conditions
R
thJL
Max. Thermal Resistance Junction
36
°C/W DC operation
to Lead
(**)
R
thJA
Max. Thermal Resistance Junction
80
°C/W
to Ambient
wt
Approximate Weight
0.10 (0.003) g (oz.)
Case Style
Device Marking
(*) dPtot
dTj
<
1
Rth( j-a)
SMB
IR1F
Similar DO-214AA
thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB
2
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10BQ040
Bulletin PD-2.397 rev. G 07/04
10
10
Reverse Current - I
R
(mA)
Tj = 150˚C
125˚C
100˚C
1
0.1
0.01
0.001
0.0001
0
5
Tj = 150˚C
Tj = 125˚C
(A)
75˚C
50˚C
Tj = 25˚C
25˚C
Instantaneous Forward Current - I
F
10 15
20 25 30 35 40
1
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
1000
Junction Capacitance - C
T
(p F)
T = 25˚C
J
100
0.1
0.2
10
0.4
0.6
0.8
1
0
10
20
30
40
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
100
(°C/W)
10
Thermal Impedance Z
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
thJC
P
DM
t1
1
Notes:
Single Pulse
(Thermal Resistance)
1. Duty factor D = t1/ t2
t2
.
.
2. Peak Tj = Pdm x ZthJC + Tc
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics (Per Leg)
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10BQ040
Bulletin PD-2.397 rev. G 07/04
160
Allowable Lead Temperature (°C)
140
130
120
110
100
Square wave (D = 0.50)
90
Rated Vr applied
80
see note (2)
70
0
0.4
0.8
Average Power Loss (Watts)
150
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
0.8
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS Limit
DC
0.6
0.4
0.2
1.2
1.6
0
0
Average Forward Current - I
F(AV)
(A)
Average Forward Current - I
F(AV)
(A)
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
0.3
0.6
0.9
1.2
1.5
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Non-Repetitive Surge Current - I
FSM
(A)
1000
100
At Any Rated Load Condition
And With rated Vrrm Applied
Following Surge
10
10
100
1000
10000
Square Wave Pulse Duration - T
p
(Microsec)
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
4
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10BQ040
Bulletin PD-2.397 rev. G 07/04
Outline Table
Device Marking: IR1F
CATHODE
ANODE
2.15 (.085)
1.80 (.071)
3.80 (.150)
3.30 (.130)
1
2
4.70 (.185)
4.10 (.161)
1 POLARITY
2 PART NUMBER
2.40 (.094)
1.90 (.075)
1.30 (.051)
0.76 (.030)
0.30 (.012)
0.15 (.006)
5.60 (.220)
5.00 (.197)
2.5 TYP.
(.098 TYP.)
SOLDERING PAD
2.0 TYP.
(.079 TYP.)
4.2 (.165)
4.0 (.157)
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
IR1F
VOLTAGE
CURRENT
IR LOGO
YYWWX
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
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