TST0912
SiGe Power Amplifier for GSM 900
Description
The TST0912 is a monolithic integrated power amplifier
IC. The device is manufactured using Atmel Wireless &
Microcontrollers’
Silicon-Germanium
(SiGe)
technology and has been designed for use in GSM
900-MHz mobile phones.
With a single supply voltage operation of 3 V and a
neglectable leakage current in
power-down mode, the TST0912
needs few external components and reduces system costs.
Electrostatic sensitive device.
Observe precautions for handling.
Features
D
35 dBm output power
D
Power-added efficiency (PAE) 50%
D
Single supply operation at 3 V
no negative voltage necessary
D
Current consumption in power-down mode
≤
10
µA,
no external power-supply switch required
D
Power-ramp control
D
Simple input and output matching
D
Simple output matching for maximum flexibility
D
SMD package (PSSOP16 with heat slug)
Block Diagram
V
CC1
5
1
V
CC2
2
3
GND
4 10
16
11
RF
in
(900 MHz)
12
6
Match
Match
Match
RF
out
/V
CC3
13
14
V
CTL
V
CC,CTL
GND
8
9
7
15
Harmonic tuning
Control
(900 MHz)
14744
Figure 1. Block diagram
Ordering Information
Extended Type Number
TST0912-TJS
TST0912-TJQ
PSSO16
PSSO16
Package
Tube
Taped and reeled
Remarks
Rev. A2, 28-Sep-00
1 (6)
Preliminary Information
TST0912
Pin Description
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Symbol
V
CC2
V
CC2
V
CC2
GND
V
CC1
RF
in
GND
V
CTL
V
CC,CTL
GND
RF
out
/V
CC3
RF
out
/V
CC3
RF
out
/V
CC3
RF
out
/V
CC3
RF
out
/ V
CC3
GND
Function
Supply voltage 2
Supply voltage 2
Supply voltage 2
Ground
Supply voltage 1
RF input
Ground (control)
Control input
Supply voltage for control
Ground (optional)
RF output / supply voltage 3
RF output / supply voltage 3
RF output / supply voltage 3
RF output / supply voltage 3
RF output / harmonic tuning
Ground
Figure 2. Pinning
V
CC2
V
CC2
V
CC3
GND
V
CC1
RF
in
GND
V
CTL
1
2
3
4
5
6
7
8
16 GND
15 RF
out
/V
CC3
14 RF
out
/V
CC3
13 RF
out
/V
CC3
12 RF
out
/V
CC3
11 RF
out
/V
CC3
10 GND
9 V
CC,CTL
Absolute Maximum Ratings
All voltages refer to GND
Parameter
Supply voltage V
CC
Pin 5
Pins 1, 2 and 3
Pins 11, 12, 13 and 14
Pin 9
Pin 6
Pin 8
Symbol
V
CC1
V
CC2
V
CC3
V
CC, CTL
P
in
V
CTL
0
12
2.2
25
t
burst
T
j
T
stg
– 40
1.2
+150
+150
dBm
V
%
ms
°C
°C
Min.
Max.
5.0
Unit
V
Input power
Gain control voltage
Duty cycle for operation
Burst duration
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction ambient
Symbol
R
thJA
Value
t.b.d.
Unit
K/W
2 (6)
Rev. A2, 28-Sep-00
Preliminary Information
TST0912
Operating Range
All voltages refer to GND
Parameter
Supply voltage V
CC
Ambient temperature
Input frequency
Symbol
V
CC1
, V
CC2
, V
CC3,
V
CC, CTL
T
amb
f
in
Min.
2.4
– 25
900
Typ.
3.5
Max.
4.5
+ 85
Unit
V
°C
MHz
Electrical Characteristics
Test conditions: V
CC
= V
CC1
to V
CC3,
V
CC, CTL
= 3.5 V, V
CTL
= 1.5 V, T
amb
= + 25°C, t
burst
= 0.577 ms,
t
period
= 4.615 ms (see application circuit)
Parameter
Power supply
Supply voltage
Current consumption
Current consumption
(leakage current)
RF input
Frequency range
Input impedance *)
Input power
Input VSWR *)
RF output
Output impedance *)
Output power
P
in
= 3 dBm, R
L
= R
G
= 50
Ω
V
CC
= 3.5 V, T
amb
= +25°C
V
CC
= 2.7 V, T
amb
= +85°C
V
CTL
= 0.3 V
V
CC
= 3 V, P
out
= 28 dBm
V
CC
= 3 V, P
out
= 30 dBm
V
CC
= 3 V, P
out
= 33.5 dBm
T
amb
= –25 to + 85
°C
no spurious
≥
–60 dBc
P
out
= 34.5 dBm,
all phases
PAE
VSWR
VSWR
2fo
3fo
P
out
= 34 dBm, RBW = 100
kHz
f = 925 to 935 MHz
f
≥
935 MHz
– 73
– 85
25
35
50
10 : 1
10 : 1
–35
–35
– 70
– 82
dBc
dBc
dBm
dBm
Z
o
P
out
34.3
32.0
50
34.8
33.0
– 20
W
dBm
dBm
dBm
%
P
in
= 0 to 12 dBm,
P
out
= 34.5 dBm
f
in
Z
i
P
in
VSWR
880
900
50
3
12
2:1
915
MHz
W
dBm
Active mode
P
out
= 34.5 dBm, PAE = 50%
Power-down mode
V
CTL
≤
0.2 V
V
CC
I
I
2.4
3.5
1.7
10
4.5
V
A
µA
Test Conditions / Pins
Symbol
Min.
Typ.
Max.
Unit
Minimum output power
Power-added efficiency
Stability
Load mismatch
(stable, no demage)
Second harmonic distortion
Third harmonic distortion
Noise power
Rev. A2, 28-Sep-00
3 (6)
Preliminary Information
TST0912
Electrical Characteristics (continued)
Test conditions: V
CC
= V
CC1
to V
CC3,
V
CC, CTL
= 3.5 V, V
CTL
= 1.5 V, T
amb
= + 25°C, t
burst
= 0.577 ms,
t
period
= 4.615 ms (see application circuit)
Parameter
Rise and fall time
Isolation between input and
output
Power control
Control curve slope
Power-control range
Control-voltage range
Control current
*)
P
in
= 0 to 10 dBm,
V
CTL
= 0 to 2.0 V
P
out
≥
25 dBm
V
CTRL
= 0.3 to 2.0 V
V
CTL
I
CTL
50
0.3
2.0
200
150
dB/ V
dB
V
µA
P
in
= 0 to 10 dBm,
V
CTL
≤
0.2 V (power down)
Test Conditions / Pins
Symbol
t
r
, t
f
50
Min.
Typ.
Max.
0.5
Unit
µs
dB
with external matching (see application circuit)
50
P
out
( dBm ), Gain ( dB ), PAE ( % )
50
PAE
P
out
Gain
20
10
0
–40
P
out
( dBm ), PAE ( % )
40
30
45
40
35
30
25
20
–30
–20
–10
0
P
in
(dBm)
10
20
2.5
3.0
3.5
4.0
V
CC
(V)
4.5
5.0
PAE
P
out
Figure 3. Gain, P
out
and PAE versus P
in
60
Figure 5. P
out
, PAE versus V
CC
Remarks for the Application Circuit
PAE
50
P ( dBm ), PAE ( % )
out
40
30
20
10
0
–10
0.50
P
out
All components Tx are microstrip lines:
FR4, epsilon(r) = 4.3, metal: Cu 3.5
mm;
distance: 1. layer to RF ground = 0.5 mm
Name
T1
T2
T3
l
mm
20.5
1.3
14.8
14.2
w
mm
1.0
1.0
0.5
0.5
Name
T5
T6
T7
T8
l
mm
2.5
43.1
6.0
10.0
w
mm
1.0
0.5
1.25
0.5
0.75
1.00
1.25 1.50
V
ramp
(V)
1.75
2.00
T4
Figure 4. P
out
, PAE versus V
ramp
4 (6)
Rev. A2, 28-Sep-00
Preliminary Information
TST0912
Application Circuit
VCC
C1
220nF
C2
220nF
C3
39pF
AVX
T3
15pF
AVX
C4
C5
RFIN
900 MHz
12pF
L1
3.3nH
VCTL
T5
7
Control
C6
22pF
8
9
10
VCC,CTL
C7
22pF
C8
1nF
4
T4
5
6
13
12
11
T7
C9
10 pF
AVX
C10
56pF
RFOUT
T1
T2
2
3
15
14
C12
220nF
1
16
Harmonic tuning
T8
C11
100pF
T6
1/4 Wavelength line
14250
Figure 6.
Package Information
Rev. A2, 28-Sep-00
5 (6)
Preliminary Information
模拟电子
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