Datasheet> 器件分类 > 存储> 存储> K4S560832N-LL750

K4S560832N-LL750: 产品描述Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54; 产品类别存储存储; 文件大小434KB，共18页; 制造商SAMSUNG(三星); 官网地址http://www.samsung.com/Products/Semiconductor/; 标准

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K4S560832N-LL750概述

Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54

K4S560832N-LL750规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	SAMSUNG(三星)
零件包装代码	TSOP2
包装说明	TSOP2, TSOP54,.46,32
针数	54
Reach Compliance Code	compliant
ECCN代码	EAR99
访问模式	FOUR BANK PAGE BURST
最长访问时间	5.4 ns
其他特性	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	133 MHz
I/O 类型	COMMON
交错的突发长度	1,2,4,8
JESD-30 代码	R-PDSO-G54
长度	22.22 mm
内存密度	268435456 bit
内存集成电路类型	SYNCHRONOUS DRAM
内存宽度	8
功能数量	1
端口数量	1
端子数量	54
字数	33554432 words
字数代码	32000000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	32MX8
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP2
封装等效代码	TSOP54,.46,32
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	3.3 V
认证状态	Not Qualified
刷新周期	8192
座面最大高度	1.2 mm
自我刷新	YES
连续突发长度	1,2,4,8,FP
最大待机电流	0.002 A
最大压摆率	0.04 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子形式	GULL WING
端子节距	0.8 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	10.16 mm

K4S560832N-LL750文档预览

Rev. 1.0, Apr. 2010

K4S560432N

K4S560832N

K4S561632N

54TSOP(II) with Lead-Free & Halogen-Free

(RoHS compliant)

256Mb N-die SDRAM

datasheet

SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

SPECIFICATIONS WITHOUT NOTICE.

Products and specifications discussed herein are for reference purposes only. All information discussed

herein is provided on an "AS IS" basis, without warranties of any kind.

This document and all information discussed herein remain the sole and exclusive property of Samsung

Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property

right is granted by one party to the other party under this document, by implication, estoppel or other-

wise.

Samsung products are not intended for use in life support, critical care, medical, safety equipment, or

similar applications where product failure could result in loss of life or personal or physical harm, or any

military or defense application, or any governmental procurement to which special terms or provisions

may apply.

For updates or additional information about Samsung products, contact your nearest Samsung office.

All brand names, trademarks and registered trademarks belong to their respective owners.

ⓒ

-1-

K4S560432N

K4S560832N

K4S561632N

datasheet

History

- First Spec. Release

Draft Date

Apr. 2010

Remark

Rev. 1.0

SDRAM

Revision History

Revision No.

1.0

Editor

S.H.Kim

-2-

K4S560432N

K4S560832N

K4S561632N

datasheet

Rev. 1.0

SDRAM

Table Of Contents

256Mb N-die SDRAM

1. KEY FEATURES........................................................................................................................................................... 4

2. GENERAL DESCRIPTION ........................................................................................................................................... 4

3. ORDERING INFORMATION ........................................................................................................................................ 4

4. PACKAGE PHYSICAL DIMENSION ............................................................................................................................ 5

5. FUNCTIONAL BLOCK DIAGRAM ................................................................................................................................ 6

6. PIN CONFIGURATION (TOP VIEW) ............................................................................................................................ 7

7. INPUT/OUTPUT FUNCTION DESCRIPTION .............................................................................................................. 7

8. ABSOLUTE MAXIMUM RATINGS ............................................................................................................................... 8

9. DC OPERATING CONDITIONS ................................................................................................................................... 8

10. CAPACITANCE .......................................................................................................................................................... 8

11. DC CHARACTERISTICS (x4/x8) ................................................................................................................................ 9

12. DC CHARACTERISTICS (x16)................................................................................................................................... 10

13. AC OPERATING TEST CONDITIONS ....................................................................................................................... 11

14. OPERATING AC PARAMETER ................................................................................................................................. 12

15. AC CHARACTERISTICS ............................................................................................................................................ 13

16. DQ BUFFER OUTPUT DRIVE CHARACTERISTICS................................................................................................. 13

17. IBIS SPECIFICATION................................................................................................................................................. 14

18. SIMPLIFIED TRUTH TABLE ...................................................................................................................................... 18

-3-

K4S560432N

K4S560832N

K4S561632N

datasheet

Rev. 1.0

SDRAM

1. KEY FEATURES

• JEDEC standard 3.3V power supply

• LVTTL compatible with multiplexed address

• Four banks operation

• MRS cycle with address key programs

-. CAS latency (2 & 3)

-. Burst length (1, 2, 4, 8 & Full page)

-. Burst type (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the system clock.

• Burst read single-bit write operation

• DQM (x4,x8) & L(U)DQM (x16) for masking

• Auto & self refresh

• 64ms refresh period (8K Cycle)

• Lead-Free & Halogen-Free Package

• RoHS compliant

2. GENERAL DESCRIPTION

The K4S560432N / K4S560832N / K4S561632N is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4

bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous

design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, pro-

grammable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory sys-

tem applications.

3. ORDERING INFORMATION

Part No.

K4S560432N-LC/L75

K4S560832N-LC/L75

K4S561632N-LC/L60

K4S561632N-LC/L75

Orgainization

64M x 4

32M x 8

16M x 16

Max Freq.

133MHz (CL=3)

166MHz (CL=3)

133MHz (CL=3)

LVTTL

54pin TSOP(II)

Lead-Free & Halogen-Free

Interface

Package

[ Table 1 ] Row & Column address configuration

Organization

64Mx4

32Mx8

16Mx16

Row Address

A0~A12

Column Address

A0-A9, A11

A0-A9

A0-A8

-4-

K4S560432N

K4S560832N

K4S561632N

datasheet

(0.80)

(0.50)

#54

#28

Rev. 1.0

SDRAM

4. PACKAGE PHYSICAL DIMENSION

Unit : mm

10.16

0.10

(1.50)

(0.80)

0.665

0.05

0.210

0.05

1.00

0.10

0.1

(10°)

1.20 MAX

22.22

0.10

0.125

- 0.035

+0.075

(0.50)

(1.50)

#27

(10°)

11.76

0.20

(10.76)

0.05 MIN

)

(0.71)

0.80TYP

[0.80

0.08]

0.075 MAX

)

Detail A

Detail B

NOTE

1. ( ) IS REFERENCE

2. [ ] IS ASS’Y OUT QUALITY

Detail A

0.30

- 0.05

+0.10

Detail B

(0°

∼

8°)

0.35

- 0.05

+0.10

Figure 1. 54Pin TSOP(II) Package Dimension

-5-

[

(10°)

[

(4°)

0.10 MAX

0.45 ~ 0.75

0.25TYP

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K4S560832N-LL750相似产品对比

	K4S560832N-LL750	K4S561632N-LC750	K4S560832N-LC75	K4S560832N-LC750	K4S560432N-LC750	K4S560432N-LL750	K4S561632N-LL750	K4S561632N-LL600	K4S561632N-LC600	K4S561632N-LC75
描述	Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合	符合	符合
厂商名称	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)
包装说明	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32
Reach Compliance Code	compliant	unknown	compliant	compliant	unknown	unknown	compliant	compliant	compliant	unknown
访问模式	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
最长访问时间	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5 ns	5 ns	5.4 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	133 MHz	133 MHz	133 MHz	133 MHz	133 MHz	133 MHz	133 MHz	133 MHz	133 MHz	133 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
交错的突发长度	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 代码	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54
长度	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm
内存密度	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit
内存集成电路类型	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
内存宽度	8	16	8	8	4	4	16	16	16	16
功能数量	1	1	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1	1	1
端子数量	54	54	54	54	54	54	54	54	54	54
字数	33554432 words	16777216 words	33554432 words	33554432 words	67108864 words	67108864 words	16777216 words	16777216 words	16777216 words	16777216 words
字数代码	32000000	16000000	32000000	32000000	64000000	64000000	16000000	16000000	16000000	16000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	32MX8	16MX16	32MX8	32MX8	64MX4	64MX4	16MX16	16MX16	16MX16	16MX16
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
封装等效代码	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）	NOT SPECIFIED	260	260	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	260
电源	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	8192	8192	8192	8192	8192	8192	8192	8192	8192	8192
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
自我刷新	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
连续突发长度	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
最大待机电流	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A
最大压摆率	0.04 mA	0.05 mA	0.04 mA	0.04 mA	0.04 mA	0.04 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm
是否无铅	不含铅	-	不含铅	不含铅	不含铅	不含铅	-	-	-	不含铅
零件包装代码	TSOP2	TSOP2	-	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	-
针数	54	54	-	54	54	54	54	54	54	-
ECCN代码	EAR99	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	-

K4S560832N-LL750

K4S560832N-LL750概述

K4S560832N-LL750规格参数

K4S560832N-LL750文档预览

K4S560832N-LL750相似产品对比

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