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CMST3410BKLEADFREE

产品描述Transistor
产品类别分立半导体    晶体管   
文件大小402KB,共2页
制造商Central Semiconductor
标准
下载文档 详细参数 选型对比 全文预览

CMST3410BKLEADFREE概述

Transistor

CMST3410BKLEADFREE规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Central Semiconductor
包装说明,
Reach Compliance Codecompliant
最大集电极电流 (IC)1 A
配置Single
最小直流电流增益 (hFE)100
最高工作温度150 °C
极性/信道类型NPN
最大功率耗散 (Abs)0.275 W
表面贴装YES
标称过渡频率 (fT)100 MHz

CMST3410BKLEADFREE文档预览

CMST3410 NPN
CMST7410 PNP
SURFACE MOUNT
COMPLEMENTARY LOW VCE(SAT)
SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMST3410,
CMST7410 types are complementary silicon transistors
manufactured by the epitaxial planar process, epoxy
molded in a SUPERmini™ surface mount package,
designed for battery driven, handheld devices requiring
high current and low VCE(SAT) voltages.
MARKING CODES: CMST3410: C03
CMST7410: C07
SOT-323 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
A
A
mW
°C
°C/W
40
25
6.0
1.0
1.5
275
-65 to +150
455
PNP
TYP
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
NPN
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=40V
IEBO
VEB=6.0V
BVCBO
IC=100µA
40
BVCEO
IC=10mA
25
BVEBO
IE=100µA
6.0
VCE(SAT)
IC=50mA, IB=5.0mA
25
VCE(SAT)
IC=100mA, IB=10mA
40
VCE(SAT)
IC=200mA, IB=20mA
80
VCE(SAT)
IC=500mA, IB=50mA
190
VCE(SAT)
IC=800mA, IB=80mA
290
VCE(SAT)
IC=1.0A, IB=100mA
360
VBE(SAT)
IC=800mA, IB=80mA
VBE(ON)
VCE=1.0V, IC=10mA
hFE
VCE=1.0V, IC=10mA
100
hFE
VCE=1.0V, IC=100mA
100
hFE
VCE=1.0V, IC=500mA
100
hFE
VCE=1.0V, IC=1.0A
50
fT
VCE=10V, IC=50mA, f=100MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz (CMST3410)
6.0
Cob
VCB=10V, IE=0, f=1.0MHz (CMST7410)
MAX
100
100
30
50
95
205
320
400
50
75
150
250
400
450
1.1
0.9
300
UNITS
nA
nA
V
V
V
mV
mV
mV
mV
mV
mV
V
V
10
10
15
MHz
pF
pF
R2 (1-August 2011)
CMST3410 NPN
CMST7410 PNP
SURFACE MOUNT
COMPLEMENTARY LOW VCE(SAT)
SILICON TRANSISTORS
SOT-323 CASE - MECHANICAL OUTLINE
PIN CONFIGURATIONS
CMST3410 NPN
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODE: C03
CMST7410 PNP
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODE: C07
R2 (1-August 2011)
w w w. c e n t r a l s e m i . c o m

CMST3410BKLEADFREE相似产品对比

CMST3410BKLEADFREE CMST3410LEADFREE CMST3410TRLEADFREE CMST7410LEADFREE CMST7410BKLEADFREE CMST7410TRLEADFREE
描述 Transistor Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SUPERMINI-3 Transistor Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SUPERMINI-3 Transistor Transistor
是否Rohs认证 符合 符合 符合 符合 符合 符合
厂商名称 Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor
Reach Compliance Code compliant compliant compliant compliant compliant compliant
最大集电极电流 (IC) 1 A 1 A 1 A 1 A 1 A 1 A
配置 Single SINGLE Single SINGLE Single Single
最小直流电流增益 (hFE) 100 50 100 50 100 100
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
极性/信道类型 NPN NPN NPN PNP PNP PNP
表面贴装 YES YES YES YES YES YES
标称过渡频率 (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
最大功率耗散 (Abs) 0.275 W - 0.275 W - 0.275 W 0.275 W

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