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CMPT3410TRLEADFREE: 产品描述Transistor; 产品类别分立半导体晶体管; 文件大小388KB，共2页; 制造商Central Semiconductor; 标准

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CMPT3410TRLEADFREE概述

Transistor

CMPT3410TRLEADFREE规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Central Semiconductor
包装说明	,
Reach Compliance Code	compliant
最大集电极电流 (IC)	1 A
配置	Single
最小直流电流增益 (hFE)	100
最高工作温度	150 °C
极性/信道类型	NPN
最大功率耗散 (Abs)	0.35 W
表面贴装	YES
标称过渡频率 (fT)	100 MHz

CMPT3410TRLEADFREE文档预览

CMPT3410

SURFACE MOUNT

LOW VCE(SAT)

NPN SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT3410 type is

a NPN Low VCE(SAT) silicon transistor manufactured

by the epitaxial planar process and epoxy molded in

an SOT-23 surface mount package. This device is

designed for battery driven, handheld devices requiring

high current and Low VCE(SAT).

MARKING CODE: C341

SOT-23 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

VBE(ON)

hFE

Cob

SYMBOL

VCBO

VCEO

VEBO

ICM

TJ, Tstg

UNITS

°C

°C/W

UNITS

6.0

1.0

1.5

350

-65 to +150

357

MAX

100

CHARACTERISTICS:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

MIN

TYP

VCB=40V

VEB=6.0V

IC=100μA

IC=10mA

IE=100μA

IC=50mA, IB=5.0mA

IC=100mA, IB=10mA

IC=200mA, IB=20mA

IC=500mA, IB=50mA

IC=800mA, IB=80mA

IC=1.0A, IB=100mA

IC=800mA, IB=80mA

VCE=1.0V, IC=10mA

VCE=1.0V, IC=100mA

VCE=1.0V, IC=500mA

VCE=1.0V, IC=1.0A

VCE=10V, IC=50mA, f=100MHz

VCB=10V, IE=0, f=1.0MHz

6.0

190

290

360

150

250

400

450

1.1

0.9

100

6.0

300

MHz

R2 (1-August 2011)

CMPT3410

SURFACE MOUNT

LOW VCE(SAT)

NPN SILICON TRANSISTOR

SOT-23 CASE - MECHANICAL OUTLINE

LEAD CODE:

1) Base

2) Emitter

3) Collector

MARKING CODE: C341

R2 (1-August 2011)

w w w. c e n t r a l s e m i . c o m

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CMPT3410TRLEADFREE相似产品对比

	CMPT3410TRLEADFREE	CMPT3410BKLEADFREE	CMPT3410LEADFREE	CMPT3410TR
描述	Transistor	Transistor	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
厂商名称	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
Reach Compliance Code	compliant	compliant	compliant	compliant
最大集电极电流 (IC)	1 A	1 A	1 A	1 A
配置	Single	Single	SINGLE	SINGLE
最小直流电流增益 (hFE)	100	100	50	50
最高工作温度	150 °C	150 °C	150 °C	150 °C
极性/信道类型	NPN	NPN	NPN	NPN
表面贴装	YES	YES	YES	YES
标称过渡频率 (fT)	100 MHz	100 MHz	100 MHz	100 MHz
是否Rohs认证	符合	符合	符合	-
最大功率耗散 (Abs)	0.35 W	0.35 W	-	0.35 W

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