Datasheet> 器件分类 > 存储> 存储> K4S51323PF-EF750

文档预览

K4S51323PF-EF750: 产品描述Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90; 产品类别存储存储; 文件大小143KB，共12页; 制造商SAMSUNG(三星); 官网地址http://www.samsung.com/Products/Semiconductor/; 标准

下载文档详细参数选型对比全文预览

K4S51323PF-EF750概述

Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90

K4S51323PF-EF750规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	SAMSUNG(三星)
零件包装代码	BGA
包装说明	LFBGA,
针数	90
Reach Compliance Code	compliant
ECCN代码	EAR99
访问模式	FOUR BANK PAGE BURST
最长访问时间	6 ns
其他特性	AUTO/SELF REFRESH
JESD-30 代码	R-PBGA-B90
JESD-609代码	e1
长度	13 mm
内存密度	536870912 bit
内存集成电路类型	SYNCHRONOUS DRAM
内存宽度	32
湿度敏感等级	3
功能数量	1
端口数量	1
端子数量	90
字数	16777216 words
字数代码	16000000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度	-25 °C
组织	16MX32
封装主体材料	PLASTIC/EPOXY
封装代码	LFBGA
封装形状	RECTANGULAR
封装形式	GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度（摄氏度）	260
认证状态	Not Qualified
座面最大高度	1.4 mm
自我刷新	YES
最大供电电压 (Vsup)	1.95 V
最小供电电压 (Vsup)	1.7 V
标称供电电压 (Vsup)	1.8 V
表面贴装	YES
技术	CMOS
温度等级	OTHER
端子面层	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式	BALL
端子节距	0.8 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	11 mm

文档预览

下载PDF文档

全文
预览

K4S51323PF-M(E)F

4M x 32Bit x 4 Banks Mobile-SDRAM

FEATURES

1.8V power supply.

LVCMOS compatible with multiplexed address.

Four banks operation.

MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

-. DS (Driver Strength)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (8K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• 2Chips DDP 90Balls FBGA( -MXXX -Pb, -EXXX -Pb Free).

•

Mobile-SDRAM

GENERAL DESCRIPTION

The K4S51323PF is 536,870,912 bits synchronous high data

rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

ORDERING INFORMATION

Part No.

K4S51323PF-M(E)F75

K4S51323PF-M(E)F90

K4S51323PF-M(E)F1L

Max Freq.

133MHz(CL=3),83MHz(CL=2)

111MHz(CL=3),83MHz(CL=2)

111MHz(CL=3)

,66MHz(CL2)

LVCMOS

90 FBGA Pb

(Pb Free)

Interface

Package

- M(E)F : Low Power, Commercial Temperature(-25°C ~ 70°C)

Notes :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is

potentially at stake. Please contact to the memory marketing team in samsung electronics when considering the use of a product

contained herein for any specific purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

Address configuration

Organization

16Mx32

Bank

BA0,BA1

Row

A0 - A12

Column Address

A0 - A8

September 2004

K4S51323PF-EF750相似产品对比

	K4S51323PF-EF750	K4S51323PF-MF900	K4S51323PF-MF750	K4S51323PF-EF900	K4S51323PF-MF1L0	K4S51323PF-EF1L0	K4S51323PF-MF750JR
描述	Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90	Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, FBGA-90	Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, FBGA-90	Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90	Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, FBGA-90	Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90	Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, FBGA-90
厂商名称	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)
零件包装代码	BGA	BGA	BGA	BGA	BGA	BGA	BGA
包装说明	LFBGA,	LFBGA,	LFBGA,	LFBGA,	LFBGA,	LFBGA,	LFBGA,
针数	90	90	90	90	90	90	90
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
最长访问时间	6 ns	7 ns	6 ns	7 ns	7 ns	7 ns	6 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 代码	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90
长度	13 mm	13 mm	13 mm	13 mm	13 mm	13 mm	13 mm
内存密度	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit
内存集成电路类型	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
内存宽度	32	32	32	32	32	32	32
功能数量	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1
端子数量	90	90	90	90	90	90	90
字数	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words
字数代码	16000000	16000000	16000000	16000000	16000000	16000000	16000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
最低工作温度	-25 °C	-25 °C	-25 °C	-25 °C	-25 °C	-25 °C	-25 °C
组织	16MX32	16MX32	16MX32	16MX32	16MX32	16MX32	16MX32
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm
自我刷新	YES	YES	YES	YES	YES	YES	YES
最大供电电压 (Vsup)	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V
最小供电电压 (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
标称供电电压 (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
表面贴装	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
宽度	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm
是否Rohs认证	符合	不符合	不符合	符合	不符合	符合	-
峰值回流温度（摄氏度）	260	NOT SPECIFIED	NOT SPECIFIED	260	NOT SPECIFIED	260	-
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-

K4S51323PF-EF750

K4S51323PF-EF750概述

K4S51323PF-EF750规格参数

文档预览

K4S51323PF-EF750相似产品对比

推荐资源