D2
PA
K
PSMN016-100BS
N-channel 100V 16 mΩ standard level MOSFET in D2PAK
Rev. 2 — 1 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a D2PAK packages qualified to 175C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 15 A; T
j
= 100 °C; see
Figure 12
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 13
Dynamic characteristics
Q
GD
Q
G(tot)
E
DS(AL)S
gate-drain charge
total gate charge
non-repetitive drain-source
avalanche energy
V
GS
= 10 V; I
D
= 30 A; V
DS
= 50 V;
see
Figure 14;
see
Figure 15
-
-
-
15
49
-
-
-
101
nC
nC
mJ
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
j
= 25 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
-55
-
-
Typ
-
-
-
-
-
13
Max
100
57
148
175
28.8
16
Unit
V
A
W
°C
mΩ
mΩ
Static characteristics
Avalanche ruggedness
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 60 A;
V
sup
≤
100 V; unclamped; R
GS
= 50
Ω
NXP Semiconductors
PSMN016-100BS
N-channel 100V 16 mΩ standard level MOSFET in D2PAK
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
S
D
gate
drain
[1]
source
source
mounting base; connected to drain
1
mbb076
Simplified outline
mb
Graphic symbol
D
G
S
2
3
SOT404 (D2PAK)
[1]
It is not possible to make connection to pin 2
3. Ordering information
Table 3.
Ordering information
Package
Name
PSMN016-100BS
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Type number
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
T
sld(M)
I
S
I
SM
E
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 60 A;
V
sup
≤
100 V; unclamped; R
GS
= 50
Ω
V
GS
= 10 V; T
mb
= 100 °C; see
Figure 1
V
GS
= 10 V; T
j
= 25 °C; see
Figure 1
pulsed; t
p
≤
10 µs; T
mb
= 25 °C;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
j
≤
175 °C; T
j
≥
25 °C; R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
Max
100
100
20
40
57
230
148
175
175
260
57
230
101
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness
PSMN016-100BS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 1 March 2012
2 of 14
NXP Semiconductors
PSMN016-100BS
N-channel 100V 16 mΩ standard level MOSFET in D2PAK
80
I
D
(A)
60
003aag703
120
P
der
(%)
80
03aa16
40
40
20
0
0
50
100
150
200
T
mb
(
°
C)
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
001aal388
10
3
I
D
(A)
10
2
t
p
= 10
μs
100
μs
DC
1
1 ms
10 ms
100 ms
Limit R
DSon
= V
DS
/ I
D
10
10
−1
1
10
10
2
V
DS
(V)
10
3
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN016-100BS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 1 March 2012
3 of 14
NXP Semiconductors
PSMN016-100BS
N-channel 100V 16 mΩ standard level MOSFET in D2PAK
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Conditions
see
Figure 4
[1]
Min
-
-
Typ
0.56
50
Max
1.01
-
Unit
K/W
K/W
minimum footprint; mounted on a printed-circuit board to ambient
1
Z
th (j-mb)
δ
= 0.5
(K/W)
10
-1
0.2
0.1
0.05
10
-2
0.02
003aag772
P
δ
=
t
p
T
10
-3
single shot
t
p
T
t
10
-4
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
10
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
PSMN016-100BS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 1 March 2012
4 of 14
NXP Semiconductors
PSMN016-100BS
N-channel 100V 16 mΩ standard level MOSFET in D2PAK
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 11;
see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 10
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 100 V; V
GS
= 0 V; T
j
= 125 °C
V
DS
= 100 V; V
GS
= 0 V; T
j
= 25 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 15 A; T
j
= 100 °C;
see
Figure 12
V
GS
= 10 V; I
D
= 15 A; T
j
= 175 °C;
see
Figure 12
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 13
R
G
Q
G(tot)
internal gate resistance (AC)
total gate charge
f = 1 MHz
I
D
= 0 A; V
DS
= 0 V; V
GS
= 10 V;
see
Figure 14
I
D
= 30 A; V
DS
= 50 V; V
GS
= 10 V;
see
Figure 14;see Figure 15
I
D
= 30 A; V
DS
= 50 V; V
GS
= 10 V;
see
Figure 14
Dynamic characteristics
-
-
-
-
-
I
D
= 30 A; V
DS
= 50 V; V
GS
= 10 V;
see
Figure 14;see Figure 15
V
DS
= 50 V; see
Figure 14;
see
Figure 15
V
DS
= 50 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 16
-
-
-
-
-
V
DS
= 50 V; R
L
= 1.7
Ω;
V
GS
= 10 V;
R
G(ext)
= 4.7
Ω;
T
j
= 25 °C
-
-
-
-
40
49
12
7.75
4.25
15
4.5
2404
189
113
17
23
36
18
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
Min
90
100
1
2
-
-
-
-
-
-
-
-
-
Typ
-
-
-
3
-
-
0.05
10
10
-
36.4
13
0.9
Max
-
-
-
4
4.8
100
5
100
100
28.8
44.8
16
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
Ω
Static characteristics
Q
GS
Q
GS(th)
Q
GS(th-pl)
Q
GD
V
GS(pl)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
gate-source charge
pre-threshold gate-source
charge
post-threshold gate-source
charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
PSMN016-100BS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 1 March 2012
5 of 14
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