IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT168GW
SCR
17 March 2014
Product data sheet
1. General description
Planar passivated SCR with sensitive gate in a SOT223 surface mountable plastic
package. This SCR is designed to be interfaced directly to microcontrollers, logic
integrated circuits and other low power gate trigger circuits.
2. Features and benefits
•
•
•
•
Sensitive gate
Planar passivated for voltage ruggedness and reliability
Direct triggering from low power drivers and logic ICs
Surface mountable package
3. Applications
•
•
Circuit breakers
RCD/GFI/LCCB applications
4. Quick reference data
Table 1.
Symbol
V
DRM
V
RRM
I
TSM
I
T(AV)
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
repetitive peak reverse
voltage
non-repetitive peak on- half sine wave; T
j(init)
= 25 °C;
state current
t
p
= 10 ms;
Fig. 4; Fig. 5
average on-state
current
RMS on-state current
half sine wave; T
sp
≤ 112 °C;
Fig. 1
half sine wave; T
sp
≤ 112 °C;
Fig. 2;
Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 10 mA; T
j
= 25 °C;
Fig. 9
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the
thyristor may switch to the on-state.
SO
T2
23
Conditions
[1]
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max
600
600
8
0.63
1
Unit
V
V
A
A
A
20
50
200
µA
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NXP Semiconductors
BT168GW
SCR
5. Pinning information
Table 2.
Pin
1
2
3
4
Pinning information
Symbol Description
K
A
G
mb
cathode
anode
gate
mb; connected to anode
1
2
3
Simplified outline
4
Graphic symbol
A
G
sym037
K
SC-73 (SOT223)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT168GW
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
Type number
BT168GW
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© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
17 March 2014
2 / 15
NXP Semiconductors
BT168GW
SCR
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
non-repetitive peak on-state
current
half sine wave; T
sp
≤ 112 °C;
Fig. 1
half sine wave; T
sp
≤ 112 °C;
Fig. 2;
Fig. 3
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms;
Fig. 4; Fig. 5
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
I t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
2
Conditions
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
Max
600
600
0.63
1
8
9
0.32
50
1
5
2
0.1
150
125
Unit
V
V
A
A
A
A
2
I t for fusing
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
[1]
2
t
p
= 10 ms; SIN
I
T
= 2 A; I
G
= 10 mA; dI
G
/dt = 100 mA/
µs
A s
A/µs
A
V
W
W
°C
°C
over any 20 ms period
-
-40
-
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the
thyristor may switch to the on-state.
BT168GW
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© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
17 March 2014
3 / 15
NXP Semiconductors
BT168GW
SCR
P
tot
(W)
1
a = 1.57
2.2
2.8
1.9
001aab496
110
T
sp(max)
(°C)
113
0.8
0.6
4
conduction
angle
(degrees)
30
60
90
120
180
0
0.2
0.4
0.6
form
factor
a
4
2.8
2.2
1.9
1.57
α
116
0.4
119
0.2
122
0
I
T(AV)
(A)
125
0.8
α = conduction angle; a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 1.
Total power dissipation as a function of average on-state current; maximum values
1.2
I
T(RMS)
(A)
0.8
1
001aab498
2
I
T(RMS)
(A)
1.5
001aab500
112 °C
0.4
0.5
0
-50
0
50
100
T
sp
(°C)
150
0
10
-2
10
-1
1
10
surge duration (s)
Fig. 2.
RMS on-state current as a function of solder
point temperature; maximum values
f = 50 Hz; T
sp
= 112 °C
Fig. 3.
RMS on-state current as a function of surge
duration; maximum values
BT168GW
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
17 March 2014
4 / 15
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