MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
Rev. 02 — 10 December 2009
Product data sheet
1. Product profile
1.1 General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common
anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package. The devices are designed for ESD and transient
overvoltage protection of up to two signal lines.
Table 1.
Product overview
Package
NXP
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
SOT23
JEDEC
TO-236AB
dual common anode
Configuration
Type number
1.2 Features
Unidirectional ESD protection of
two lines
Bidirectional ESD protection of one line
Low diode capacitance: C
d
≤
280 pF
Rated peak pulse power: P
PPM
= 40 W
Ultra low leakage current: I
RM
= 5 nA
ESD protection up to 30 kV (contact
discharge)
IEC 61000-4-2; level 4 (ESD)
IEC 61643-321
AEC-Q101 qualified
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Automotive electronic control units
Portable electronics
NXP Semiconductors
MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
1.4 Quick reference data
Table 2.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RWM
reverse standoff voltage
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
C
d
diode capacitance
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
f = 1 MHz; V
R
= 0 V
-
-
-
-
-
-
-
-
-
-
-
210
175
150
155
130
110
85
70
65
48
45
280
230
200
200
170
140
105
90
80
60
55
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3
3
4.5
6
6.5
8.5
12
14.5
17
22
26
V
V
V
V
V
V
V
V
V
V
V
Parameter
Conditions
Min
Typ
Max
Unit
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
cathode (diode 1)
cathode (diode 2)
common anode
1
2
3
3
Simplified outline
Graphic symbol
1
2
006aaa154
MMBZXAL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2009
2 of 17
NXP Semiconductors
MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
3. Ordering information
Table 4.
Ordering information
Package
Name
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 5.
Marking codes
Marking code
[1]
RR*
RS*
RT*
RU*
RV*
*H1
*H2
*H3
*H4
*H5
*H6
Type number
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
MMBZXAL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2009
3 of 17
NXP Semiconductors
MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
P
PPM
rated peak pulse power
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
I
PPM
rated peak pulse current
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Per device
P
tot
total power dissipation
MMBZxAL series
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
MMBZXAL_SER_2
© NXP B.V. 2009. All rights reserved.
Parameter
Conditions
t
p
= 10/1000
μs
[1][2]
Min
Max
Unit
-
24
W
-
40
W
t
p
= 10/1000
μs
[1][2]
-
-
-
-
-
-
-
-
-
-
-
T
amb
≤
25
°C
[3]
[4]
3
2.76
2.5
1.7
1.7
2.35
1.9
1.6
1.4
1
0.87
A
A
A
A
A
A
A
A
A
A
A
-
-
265
290
mW
mW
[4]
-
360
mW
Product data sheet
Rev. 02 — 10 December 2009
4 of 17
NXP Semiconductors
MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
−55
−65
Max
150
+150
+150
Unit
°C
°C
°C
In accordance with IEC 61643-321 (10/1000
μs
current waveform).
Measured from pin 1 or 2 to pin 3.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and
standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Table 7.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
ESD
electrostatic discharge
voltage
IEC 61000-4-2
(contact discharge)
machine model
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 or 2 to pin 3.
[1][2]
Parameter
Conditions
Min
-
-
Max
30
2
Unit
kV
kV
[2]
Table 8.
Standard
Per diode
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
MMBZXAL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2009
5 of 17
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