TSHA6500, TSHA6501, TSHA6502, TSHA6503
Vishay Semiconductors
Infrared Emitting Diode, 875 nm, GaAlAs
FEATURES
•
•
•
•
•
•
•
•
•
•
Package type: leaded
Package form: T-1¾
Dimensions (in mm): Ø 5
Peak wavelength:
λ
p
= 875 nm
High reliability
Angle of half intensity:
ϕ
= ± 24°
Low forward voltage
Suitable for high pulse current operation
Good spectral matching with Si photodetectors
Compliant to RoHS directive 2002/95/EC and
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
94
8389
in
DESCRIPTION
The TSHA650. series are infrared, 875 nm emitting diodes in
GaAlAs technology, molded in a clear, untinted plastic
package.
APPLICATIONS
• Infrared remote control and free air data transmission
systems with comfortable radiation angle
• This emitter series is dedicated to systems with panes in
transmission space between emitter and detector,
because of the low absorbtion of 875 nm radiation in glass
PRODUCT SUMMARY
COMPONENT
TSHA6500
TSHA6501
TSHA6502
TSHA6503
I
e
(mW/sr)
20
25
30
35
ϕ
(deg)
± 24
± 24
± 24
± 24
λ
P
(nm)
875
875
875
875
t
r
(ns)
600
600
600
600
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSHA6500
TSHA6501
TSHA6502
TSHA6503
Note
MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
Bulk
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
T-1¾
T-1¾
T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Note
T
amb
= 25 °C, unless otherwise specified
Document Number: 81022
Rev. 1.9, 25-Jun-09
t
≤
5 s, 2 mm from case
J-STD-051, leads 7 mm, soldered on PCB
t
p
/T = 0.5, t
p
= 100 µs
t
p
= 100 µs
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
100
200
2.5
180
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
For technical questions, contact:
emittertechsupport@vishay.com
www.vishay.com
1
TSHA6500, TSHA6501, TSHA6502, TSHA6503
Vishay Semiconductors
Infrared Emitting Diode, 875 nm,
GaAlAs
200
180
120
100
80
R
thJA
= 230 K/W
60
40
20
0
0
10
20
30
40
50
60
70
80
90 100
21143
P
V
- Power Dissipation (mW)
140
120
100
80
60
40
20
0
R
thJA
= 230 K/W
I
F
- Forward Current (mA)
160
0
10
20 30 40
50 60 70
80
90 100
21142
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
Virtual source diameter
Note
T
amb
= 25 °C, unless otherwise specified
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 1 A
I
F
= 100 mA
I
F
= 1 A
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 20 mA
SYMBOL
V
F
TK
VF
I
R
C
j
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
r
t
f
t
f
d
20
- 0.7
± 24
875
80
0.2
600
300
600
300
2.2
MIN.
TYP.
1.5
- 1.6
100
MAX.
1.8
UNIT
V
mV/K
µA
pF
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
www.vishay.com
2
For technical questions, contact:
emittertechsupport@vishay.com
Document Number: 81022
Rev. 1.9, 25-Jun-09
TSHA6500, TSHA6501, TSHA6502, TSHA6503
Infrared Emitting Diode, 875 nm,
GaAlAs
TYPE DEDICATED CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
TSHA6500
Forward voltage
I
F
= 1 A, t
p
= 100 µs
TSHA6501
TSHA6502
TSHA6503
TSHA6500
I
F
= 100 mA, t
p
= 20 ms
Radiant intensity
I
F
= 1 A, t
p
= 100 µs
TSHA6501
TSHA6502
TSHA6503
TSHA6500
TSHA6501
TSHA6502
TSHA6503
TSHA6500
Radiant power
I
F
= 100 mA, t
p
= 20 ms
TSHA6501
TSHA6502
TSHA6503
Note
T
amb
= 25 °C, unless otherwise specified
SYMBOL
V
F
V
F
V
F
V
F
I
e
I
e
I
e
I
e
I
e
I
e
I
e
I
e
φ
e
φ
e
φ
e
φ
e
12
16
20
24
100
130
160
200
MIN.
TYP.
2.8
2.8
2.8
2.8
20
25
30
35
160
200
240
280
22
23
24
25
MAX.
3.5
3.5
3.5
3.5
60
60
60
60
UNIT
V
V
V
V
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW
mW
mW
mW
Vishay Semiconductors
BASIC CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
10
1
10
4
I
F
- Forward Current (A)
I
FSM
= 2.5 A (single pause)
t
p
/T= 0.01
10
0
0.05
0.1
0.2
0.5
10
-1
10
-2
10
-1
10
0
10
1
10
2
I
F
- Forward Current (mA)
10
3
t
p
= 100
µs
t
p
/T= 0.001
10
2
10
1
t
p
- Pulse Duration (ms)
94
8005
0
1
2
3
4
94
8003
V
F
- Forward
Voltage
(V)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Document Number: 81022
Rev. 1.9, 25-Jun-09
For technical questions, contact:
emittertechsupport@vishay.com
www.vishay.com
3
TSHA6500, TSHA6501, TSHA6502, TSHA6503
Vishay Semiconductors
Infrared Emitting Diode, 875 nm,
GaAlAs
1.2
V
F rel
- Relative Forward
Voltage
(V)
1.6
1.1
I
F
= 10 mA
1.0
0.9
I
e rel
;
Φ
e rel
1.2
I
F
= 20 mA
0.8
0.4
0.8
0.7
0
20
40
60
80
100
94
8020
0
- 10 0 10
50
100
140
94 7990
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
1000
I
e
- Radiant Intensity (mW/sr)
Φ
e
- Relative Radiant Power
1.25
TSHA 6503
TSHA 6502
1.0
100
0.75
0.5
TSHA 6501
10
TSHA 6500
1
10
0
0.25
I
F
= 100 mA
Φ
e
(
λ
)
rel
=
Φ
e
(
λ
) /
Φ
e
(
λ
p
)
0
780
880
λ
-
Wavelenght
(nm)
980
94
8746
10
1
10
2
10
3
I
F
- Forward Current (mA)
10
4
94
8000
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 9 - Relative Radiant Power vs. Wavelength
0°
10°
20°
30°
1000
I
e rel
- Relative Radiant Intensity
Φ
e
- Radiant Power (mW)
100
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
10
1
0.1
10
0
94
8015
e
10
1
10
2
10
3
I
F
- Forward Current (mA)
10
4
94
8016
e
0.6
0.4
0.2
0
0.2
0.4
0.6
Fig. 7 - Radiant Power vs. Forward Current
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
www.vishay.com
4
For technical questions, contact:
emittertechsupport@vishay.com
Document Number: 81022
Rev. 1.9, 25-Jun-09
TSHA6500, TSHA6501, TSHA6502, TSHA6503
Infrared Emitting Diode, 875 nm,
GaAlAs
PACKAGE DIMENSIONS
in millimeters
Vishay Semiconductors
A
C
7.7 ± 0.15
Ø 5.8 ± 0.15
R2.49 (sphere)
8.7
± 0.3
(4.4)
35.2 ± 0.55
< 0.7
Area not plane
+ 0.2
0.6 - 0.1
1 min.
Ø 5 ± 0.15
+ 0.15
0.5 - 0.05
2.54 nom.
+ 0.15
0.5 - 0.05
technical drawings
according to DIN
specifications
6.544-5259.08-4
Issue: 3; 19.05.09
14436
Document Number: 81022
Rev. 1.9, 25-Jun-09
For technical questions, contact:
emittertechsupport@vishay.com
www.vishay.com
5
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