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IDT70V7589S166BF: 产品描述Dual-Port SRAM, 64KX36, 12ns, CMOS, PBGA208, FBGA-208; 产品类别存储存储; 文件大小492KB，共22页; 制造商IDT (Integrated Device Technology)

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IDT70V7589S166BF概述

Dual-Port SRAM, 64KX36, 12ns, CMOS, PBGA208, FBGA-208

IDT70V7589S166BF规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	BGA
包装说明	FBGA-208
针数	208
Reach Compliance Code	not_compliant
ECCN代码	3A991.B.2.A
最长访问时间	12 ns
其他特性	FLOW-THROUGH OR PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)	166 MHz
I/O 类型	COMMON
JESD-30 代码	S-PBGA-B208
JESD-609代码	e0
长度	15 mm
内存密度	2359296 bit
内存集成电路类型	DUAL-PORT SRAM
内存宽度	36
湿度敏感等级	3
功能数量	1
端口数量	2
端子数量	208
字数	65536 words
字数代码	64000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	64KX36
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TFBGA
封装等效代码	BGA208,17X17,32
封装形状	SQUARE
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行	PARALLEL
峰值回流温度（摄氏度）	225
电源	2.5/3.3,3.3 V
认证状态	Not Qualified
座面最大高度	1.2 mm
最大待机电流	0.03 A
最小待机电流	3.15 V
最大压摆率	0.79 mA
最大供电电压 (Vsup)	3.45 V
最小供电电压 (Vsup)	3.15 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn63Pb37)
端子形式	BALL
端子节距	0.8 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	20
宽度	15 mm

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HIGH-SPEED 3.3V 64K x 36

SYNCHRONOUS

BANK-SWITCHABLE

DUAL-PORT STATIC RAM

WITH 3.3V OR 2.5V INTERFACE

Features:

IDT70V7589S

64K x 36 Synchronous Bank-Switchable Dual-ported SRAM

Architecture

–

64 independent 1K x 36 banks

– 2 megabits of memory on chip

Bank access controlled via bank address pins

High-speed data access

– Commercial: 3.4ns (200MHz)/3.6ns (166MHz)/

4.2ns (133MHz) (max.)

– Industrial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)

Selectable Pipelined or Flow-Through output mode

Counter enable and repeat features

Dual chip enables allow for depth expansion without

additional logic

Full synchronous operation on both ports

– 5ns cycle time, 200MHz operation (14Gbps bandwidth)

– Fast 3.4ns clock to data out

– 1.5ns setup to clock and 0.5ns hold on all control, data, and

address inputs @ 200MHz

– Data input, address, byte enable and control registers

– Self-timed write allows fast cycle time

Separate byte controls for multiplexed bus and bus

matching compatibility

LVTTL- compatible, 3.3V (±150mV) power supply

for core

LVTTL compatible, selectable 3.3V (±150mV) or 2.5V

(±100mV) power supply for I/Os and control signals on

each port

Industrial temperature range (-40°C to +85°C) is

available at 166MHz and 133MHz

Available in a 208-pin Plastic Quad Flatpack (PQFP),

208-pin fine pitch Ball Grid Array (fpBGA), and 256-pin Ball

Grid Array (BGA)

Supports JTAG features compliant with IEEE 1149.1

Functional Block Diagram

PL/FT

OPT

CLK

ADS

CNTEN

REPEAT

R/W

PL/FT

OPT

CLK

ADS

CNTEN

REPEAT

R/W

CONTROL

LOGIC

MUX

1Kx36

MEMORY

ARRAY

(BANK 0)

MUX

CONTROL

LOGIC

I/O

0L-35L

I/O

CONTROL

MUX

1Kx36

MEMORY

ARRAY

(BANK 1)

MUX

I/O

CONTROL

I/O

0R-35R

ADDRESS

DECODE

ADDRESS

DECODE

BANK

DECODE

MUX

1Kx36

MEMORY

ARRAY

(BANK 63)

BANK

DECODE

NOTE:

1. The Bank-Switchable dual-port uses a true SRAM

core instead of the traditional dual-port SRAM core.

As a result, it has unique operating characteristics.

Please refer to the functional description on page 19

for details.

MUX

TDI

TDO

JTAG

TMS

TCK

TRST

5627 drw 01

DECEMBER 2002

DSC 5627/4

IDT70V7589S166BF相似产品对比

	IDT70V7589S166BF	IDT70V7589S133BCI	IDT70V7589S133BF	IDT70V7589S133DRI	IDT70V7589S133DR	IDT70V7589S166DRI	IDT70V7589S200BC	IDT70V7589S166BCI	IDT70V7589S133BFI
描述	Dual-Port SRAM, 64KX36, 12ns, CMOS, PBGA208, FBGA-208	Dual-Port SRAM, 64KX36, 15ns, CMOS, PBGA256, BGA-256	Dual-Port SRAM, 64KX36, 15ns, CMOS, PBGA208, FBGA-208	Dual-Port SRAM, 64KX36, 15ns, CMOS, PQFP208, PLASTIC, QFP-208	Dual-Port SRAM, 64KX36, 15ns, CMOS, PQFP208, PLASTIC, QFP-208	Dual-Port SRAM, 64KX36, 12ns, CMOS, PQFP208, PLASTIC, QFP-208	Dual-Port SRAM, 64KX36, 10ns, CMOS, PBGA256, BGA-256	Dual-Port SRAM, 64KX36, 12ns, CMOS, PBGA256, BGA-256	Dual-Port SRAM, 64KX36, 15ns, CMOS, PBGA208, FBGA-208
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
零件包装代码	BGA	BGA	BGA	QFP	QFP	QFP	BGA	BGA	BGA
包装说明	FBGA-208	BGA-256	FBGA-208	PLASTIC, QFP-208	PLASTIC, QFP-208	PLASTIC, QFP-208	BGA-256	BGA-256	FBGA-208
针数	208	256	208	208	208	208	256	256	208
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	_compli	not_compliant	not_compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	12 ns	15 ns	15 ns	15 ns	15 ns	12 ns	10 ns	12 ns	15 ns
其他特性	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)	166 MHz	133 MHz	133 MHz	133 MHz	133 MHz	166 MHz	200 MHz	166 MHz	133 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	S-PBGA-B208	S-PBGA-B256	S-PBGA-B208	S-PQFP-G208	S-PQFP-G208	S-PQFP-G208	S-PBGA-B256	S-PBGA-B256	S-PBGA-B208
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0
长度	15 mm	17 mm	15 mm	28 mm	28 mm	28 mm	17 mm	17 mm	15 mm
内存密度	2359296 bit	2359296 bit	2359296 bit	2359296 bit	2359296 bit	2359296 bit	2359296 bi	2359296 bit	2359296 bit
内存集成电路类型	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM
内存宽度	36	36	36	36	36	36	36	36	36
湿度敏感等级	3	3	3	3	3	3	3	3	3
功能数量	1	1	1	1	1	1	1	1	1
端口数量	2	2	2	2	2	2	2	2	2
端子数量	208	256	208	208	208	208	256	256	208
字数	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words
字数代码	64000	64000	64000	64000	64000	64000	64000	64000	64000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	85 °C	70 °C	85 °C	70 °C	85 °C	70 °C	85 °C	85 °C
最低工作温度	-	-40 °C	-	-40 °C	-	-40 °C	-	-40 °C	-40 °C
组织	64KX36	64KX36	64KX36	64KX36	64KX36	64KX36	64KX36	64KX36	64KX36
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TFBGA	LBGA	TFBGA	FQFP	FQFP	FQFP	LBGA	LBGA	TFBGA
封装等效代码	BGA208,17X17,32	BGA256,16X16,40	BGA208,17X17,32	QFP208,1.2SQ,20	QFP208,1.2SQ,20	QFP208,1.2SQ,20	BGA256,16X16,40	BGA256,16X16,40	BGA208,17X17,32
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	FLATPACK, FINE PITCH	FLATPACK, FINE PITCH	FLATPACK, FINE PITCH	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	225	225	225	225	225	225	225	225	225
电源	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.7 mm	1.2 mm	4.07 mm	4.07 mm	4.07 mm	1.5 mm	1.7 mm	1.2 mm
最大待机电流	0.03 A	0.04 A	0.03 A	0.04 A	0.03 A	0.04 A	0.03 A	0.04 A	0.04 A
最小待机电流	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V
最大压摆率	0.79 mA	0.675 mA	0.645 mA	0.675 mA	0.645 mA	0.83 mA	0.95 mA	0.83 mA	0.675 mA
最大供电电压 (Vsup)	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V
最小供电电压 (Vsup)	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)
端子形式	BALL	BALL	BALL	GULL WING	GULL WING	GULL WING	BALL	BALL	BALL
端子节距	0.8 mm	1 mm	0.8 mm	0.5 mm	0.5 mm	0.5 mm	1 mm	1 mm	0.8 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	QUAD	QUAD	QUAD	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	20	20	20	20	20	20	20	20	20
宽度	15 mm	17 mm	15 mm	28 mm	28 mm	28 mm	17 mm	17 mm	15 mm

IDT70V7589S166BF

IDT70V7589S166BF概述

IDT70V7589S166BF规格参数

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