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RURU50120

产品描述Rectifier Diode, Avalanche, 1 Phase, 1 Element, 50A, 1200V V(RRM), Silicon, TO-218, 1 PIN
产品类别分立半导体    二极管   
文件大小68KB,共5页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
下载文档 详细参数 全文预览

RURU50120概述

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 50A, 1200V V(RRM), Silicon, TO-218, 1 PIN

RURU50120规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Fairchild
零件包装代码TO-218
包装说明TO-218, 1 PIN
针数1
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性FREE WHEELING DIODE
应用ULTRA FAST SOFT RECOVERY
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.9 V
JESD-30 代码R-PSFM-D1
JESD-609代码e0
最大非重复峰值正向电流500 A
元件数量1
相数1
端子数量1
最高工作温度175 °C
最大输出电流50 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压1200 V
最大反向恢复时间0.2 µs
表面贴装NO
技术AVALANCHE
端子面层Tin/Lead (Sn/Pb)
端子形式SOLDER LUG
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED

RURU50120文档预览

RURU50120
Data Sheet
January 2000
File Number
3741.2
50A, 1200V Ultrafast Diode
The RURU50120 is an ultrafast diode with soft recovery
characteristics (t
rr
< 125ns). It has low forward voltage drop
and is of silicon nitride passivated ion-implanted epitaxial
planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and ultrafast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49099.
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . .< 125ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
RURU50120
PACKAGE
TO-218
BRAND
RURU50120
Packaging
SINGLE LEAD JEDEC STYLE TO-218
NOTE: When ordering, use the entire part number.
ANODE
CATHODE
(FLANGE)
Symbol
K
A
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RURU50120
UNITS
V
V
V
A
A
A
W
mJ
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 85
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
1200
1200
1200
50
100
500
170
50
-65 to 175
©2001 Fairchild Semiconductor Corporation
RURU50120 Rev. A
RURU50120
Electrical Specifications
SYMBOL
V
F
I
F
= 50A
I
F
= 50A, T
C
= 150
o
C
I
R
V
R
= 1200V
V
R
= 1200V, T
C
= 150
o
C
t
rr
I
F
= 1A, dI
F
/dt = 100A/
µ
s
I
F
= 50A, dI
F
/dt = 100A/
µ
s
t
a
t
b
Q
RR
C
J
R
θ
JC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θ
JC
= Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
I
F
= 50A, dI
F
/dt = 100A/
µ
s
I
F
= 50A, dI
F
/dt = 100A/
µ
s
I
F
= 50A, dI
F
/dt = 100A/
µ
s
V
R
= 10V, I
F
= 0A
T
C
= 25
o
C, Unless Otherwise Specified
TEST CONDITION
MIN
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
95
70
800
160
-
MAX
2.1
1.9
250
2.0
125
200
-
-
-
-
0.9
UNITS
V
V
µ
A
mA
ns
ns
ns
ns
nC
pF
o
C/W
Typical Performance Curves
250
100
1000
175
o
C
I
R
, REVERSE CURRENT (µA)
I
F
, FORWARD CURRENT (A)
100
100
o
C
100
o
C
10
175
o
C
25
o
C
10
1
0.1
25
o
C
1
0
0.5
1
1.5
2
2.5
3
V
F
, FORWARD VOLTAGE (V)
0.01
0
200
400
600
800
1000
1200
V
R
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2001 Fairchild Semiconductor Corporation
RURU50120 Rev. A
RURU50120
Typical Performance Curves
200
T
C
= 25
o
C, dI
F
/dt = 100A/µs
t, RECOVERY TIMES (ns)
400
150
trr
t, RECOVERY TIMES (ns)
(Continued)
500
T
C
= 100
o
C, dI
F
/dt = 100A/µs
300
trr
200
tb
ta
100
ta
tb
50
100
0
1
5
10
50
I
F
, FORWARD CURRENT (A)
0
1
5
10
50
I
F
, FORWARD CURRENT (A)
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
750
T
C
= 175
o
C, dI
F
/dt = 100A/µs
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
50
DC
40
SQ. WAVE
30
t, RECOVERY TIMES (ns)
600
450
trr
tb
300
20
150
ta
10
0
1
5
10
50
I
F
, FORWARD CURRENT (A)
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
600
C
J
, JUNCTION CAPACITANCE (pF)
500
400
300
200
100
0
0
50
100
150
200
V
R
, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
©2001 Fairchild Semiconductor Corporation
RURU50120 Rev. A
RURU50120
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
DUT
R
G
V
GE
t
1
t
2
CURRENT
SENSE
+
V
DD
0
I
F
dI
F
dt
ta
trr
tb
IGBT
-
0.25 I
RM
I
RM
FIGURE 8. t
rr
TEST CIRCUIT
I = 1.6A
L = 40mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
©2001 Fairchild Semiconductor Corporation
RURU50120 Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H
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