RURD4120S9A_SB82080
Data Sheet
March 2005
4 A, 1200 V, Ultrafast Diode
The RURD4120S9A is an Ultrafast Diode with low
forward voltage drop. This device is intended for use
as freewheeling and clamping Diodes in a variety of
switching power supplies and other power switching
applications. It is specially suited for use in switching
power supplies and industrial application.
Features
• Stealth Recovery
t
rr
= 90 ns (@ I
F
= 4 A)
• Max Forward Voltage, V
F
= 2.1 V (@ T
C
= 25°C)
• 1200 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
BRAND
UR4120
JEDEC STYLE TO-252
Ordering Information
PART NUMBER
RURD4120S9A_SB82080
PACKAGE
TO-252
Packaging
Symbol
K
CATHODE
ANODE
CATHODE
(FLANGE)
A
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RURD4120S9A_SB82080
UNIT
V
V
V
A
A
A
W
mJ
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
F(AV)
(T
C
= 152
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20 kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60 Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
©2005 Fairchild Semiconductor Corporation
RURD4120_SB82080
Rev.
B
1
1200
1200
1200
4
8
40
50
10
-65 to 175
www.fairchildsemi.com
RURD4120S9A_SB82080
Electrical Specifications
SYMBOL
V
F
I
F
= 4 A
I
F
= 4 A, T
C
= 150
o
C
I
R
V
R
= 1200 V
V
R
= 1200 V, T
C
= 150
o
C
t
rr
I
F
= 1 A, dI
F
/dt = 200 A/µs
I
F
= 4 A, dI
F
/dt = 200 A/µs
t
a
t
b
Q
rr
C
J
R
θJC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µs,
D = 2%).
I
R
= Instantaneous reverse current.
T
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
rr
= Reverse recovery time.
C
J
= Junction capacitance.
R
θJC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
I
F
= 4 A, dI
F
/dt = 200 A/µs
I
F
= 4 A, dI
F
/dt = 200 A/µs
I
F
= 4 A, dI
F
/dt = 200 A/µs
V
R
= 10 V, I
F
= 0 A
T
C
= 25
o
C, Unless Otherwise Specified
TEST CONDITION
MIN
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
40
28
335
15
-
MAX
2.1
1.9
100
500
70
90
-
-
-
-
3
UNIT
V
V
µA
µA
ns
ns
ns
ns
nC
pF
o
C/W
Typical Performance Curves
20
I
R
, REVERSE CURRENT (µA)
100
175
o
C
10
100
o
C
I
F
, FORWARD CURRENT (A)
10
1
175
o
C
100
o
C
1
25
o
C
0.1
0.01
25
o
C
0.5
0
0.5
1
1.5
2
2.5
3
V
F
, FORWARD VOLTAGE (V)
0.001
0
200
400
600
800
1000
1200
V
R
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2005 Fairchild Semiconductor Corporation
RURD4120_SB82080
Rev.
B
2
www.fairchildsemi.com
RURD4120S9A_SB82080
Typical Performance Curves
75
(Continued)
T
C
= 25
o
C, dI
F
/dt = 200A/µs
t, RECOVERY TIMES (ns)
100
T
C
= 100
o
C, dI
F
/dt = 200A/µs
80
t, RECOVERY TIMES (ns)
60
t
rr
45
t
rr
60
30
t
a
t
b
40
t
a
t
b
15
20
0
0.5
1
I
F
, FORWARD CURRENT (A)
4
0
0.5
1
I
F
, FORWARD CURRENT (A)
4
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
125
T
C
= 175
o
C, dI
F
/dt = 200A/µs
t, RECOVERY TIMES (ns)
100
5
4
DC
3
SQ. WAVE
2
t
rr
75
50
t
a
t
b
25
1
0
0.5
0
125
135
145
155
165
175
T
C
, CASE TEMPERATURE (
o
C)
1
I
F
, FORWARD CURRENT (A)
4
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
75
C
J
, JUNCTION CAPACITANCE (pF)
60
45
30
15
0
0
50
100
150
200
V
R
, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
©2005 Fairchild Semiconductor Corporation
RURD4120_SB82080
Rev.
B
3
www.fairchildsemi.com
RURD4120S9A_SB82080
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
DUT
R
G
V
GE
t
1
t
2
CURRENT
SENSE
+
V
DD
0
I
F
dI
F
dt
ta
trr
tb
IGBT
-
0.25 I
RM
I
RM
FIGURE 8. t
rr
TEST CIRCUIT
I = 1A
L = 20mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
©2005 Fairchild Semiconductor Corporation
RURD4120_SB82080
Rev.
B
4
www.fairchildsemi.com
RURD4120S9A_SB82080
©2005 Fairchild Semiconductor Corporation
RURD4120_SB82080
Rev.
B
5
www.fairchildsemi.com
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