Si1563EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
1
P-Channel
D
2
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
N-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
0.61
0.74
0.38
1.28
0.92
4
0.48
0.57
0.30
- 0.61
0.30
0.16
- 55 to 150
5s
Steady State
20
± 12
1.13
0.81
-1
- 0.72
-3
- 0.48
0.57
0.3
W
°C
5s
P-Channel
Steady State
- 20
± 12
- 0.88
- 0.63
A
Unit
V
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71416
S12-1258-Rev. E, 21-May-12
For more information please contact:
pmostechsupport@vishay.com
www.vishay.com
1
t
5s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
130
170
80
Maximum
170
220
100
°C/W
Unit
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1563EDH
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 100 µA
V
DS
= V
GS
, I
D
= - 100 µA
V
DS
= 0 V, V
GS
= ± 4.5 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 16 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 16 V, V
GS
= 0 V
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
= - 16 V, V
GS
= 0 V, T
J
= 85 °C
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 4.5 V
V
DS
-
5 V, V
GS
= - 4.5 V
V
GS
= 4.5 V, I
D
= 1.13 A
V
GS
= - 4.5 V, I
D
= - 0.88 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 2.5 V, I
D
= 0.99 A
V
GS
= - 2.5 V, I
D
= - 0.71 A
V
GS
= 1.8 V, I
D
= 0.20 A
V
GS
= - 1.8 V, I
D
= - 0.20 A
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
N-Channel
V
DD
= 10 V, R
L
= 20
I
D
0.5 A, V
GEN
= 4.5 V, R
g
= 6
P-Channel
V
DD
= - 10 V, R
L
= 20
I
D
- 0.5 A, V
GEN
= - 4.5 V, R
g
= 6
P-Channel
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 0.88 A
N-Ch
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 1.13 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.65
1.2
0.2
0.3
0.23
0.3
45
150
85
480
350
840
210
850
70
230
130
720
530
1200
320
1200
ns
1
1.8
nC
g
fs
V
SD
V
DS
= 10 V, I
D
= 1.13 A
V
DS
= - 10 V, I
D
= - 0.88 A
I
S
= 0.48 V, V
GS
= 0 V
I
S
= - 0.48 V, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
2
-2
0.220
0.400
0.281
0.610
0.344
0.850
2.6
1.5
0.8
- 0.8
1.2
- 1.2
0.280
0.490
0.360
0.750
0.450
1.10
S
V
0.45
- 0.45
1
-1
±1
±1
± 10
± 10
1
-1
5
-5
A
µA
V
µA
mA
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For more information please contact:
pmostechsupport@vishay.com
Document Number: 71416
S12-1258-Rev. E, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1563EDH
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
10 000
1000
I
GSS
- Gate Current (mA)
8
I
GSS
- Gate Current (µA)
100
10
1
T
J
= 25 °C
0.1
0.01
0
0
4
8
12
16
0.001
0
3
6
9
12
15
6
T
J
= 150 °C
4
2
V
GS
- Gate-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Gate-Current vs. Gate-Source Voltage
2.0
V
GS
= 5
V
thru 2
V
2.0
Gate-Current vs. Gate-Source Voltage
T
C
= - 55 °C
25 °C
1.5
125 °C
1.0
I
D
- Drain Current (A)
1.5
V
1.0
0.5
1
V
0.0
0
1
2
3
4
I
D
- Drain Current (A)
1.5
0.5
0.0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.6
140
120
C - Capacitance (pF)
100
Transfer Characteristics
0.5
R
DS(on)
- On-Resistance (Ω)
0.4
V
GS
= 1.8
V
V
GS
= 2.5
V
V
GS
= 4.5
V
C
iss
80
60
40
C
oss
20
0
C
rss
0.3
0.2
0.1
0.0
0.0
0.5
1.0
I
D
- Drain Current (A)
1.5
2.0
0
4
8
12
16
20
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
Capacitance
Document Number: 71416
S12-1258-Rev. E, 21-May-12
For more information please contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1563EDH
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
5
V
DS
= 10
V
I
D
= 1.28 A
R
DS(on)
- On-Resistance
1.6
V
GS
= 4.5
V
I
D
= 1.13 A
V
GS
- Gate-to-Source
Voltage
(V)
4
1.4
(Normalized)
3
1.2
2
1.0
1
0.8
0
0.0
0.3
0.6
0.9
1.2
1.5
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
2
T
J
= 150 °C
1
I
S
- Source Current (A)
R
DS(on)
- On-Resistance (Ω)
0.6
On-Resistance vs. Junction Temperature
0.5
0.4
I
D
= 1.13 A
0.3
T
J
= 25 °C
0.2
0.1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- So
u
rce-to-Drain
V
oltage (
V
)
0.0
0
1
2
3
4
5
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.2
I
D
= 100
µA
5
On-Resistance vs. Gate-to-Source Voltage
0.1
V
GS(th)
Variance
(V)
4
0.0
Power (W)
3
- 0.1
2
- 0.2
1
- 0.3
- 0.4
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
www.vishay.com
4
For more information please contact:
pmostechsupport@vishay.com
Document Number: 71416
S12-1258-Rev. E, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
