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TS788E4: 产品描述Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SMCP, 3 PIN; 产品类别分立半导体晶体管; 文件大小10KB，共1页; 制造商SANYO; 官网地址http://www.semic.sanyo.co.jp/english/index-e.html

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TS788E4概述

Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SMCP, 3 PIN

TS788E4规格参数

参数名称	属性值
厂商名称	SANYO
包装说明	SMALL OUTLINE, R-PDSO-G3
针数	3
Reach Compliance Code	unknown
ECCN代码	EAR99
配置	SINGLE
最大漏极电流 (ID)	0.001 A
FET 技术	JUNCTION
JESD-30 代码	R-PDSO-G3
元件数量	1
端子数量	3
工作模式	DEPLETION MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	0.1 W
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON

TS788E4文档预览

TS788

N- channel Junction FET

Electret Condenser Microphone

TENTATIVE

Features

•

Especially suited for use in electret condenser microphone.

•

TS788 is possible to make applied sets smaller and Slimmer.

•

Excellent voltage characteristics.

•

Excellent transient characteristics.

•

Adoption of FBET process.

Absolute Maximum Ratings / Ta=25°C

Gate to Drain Voltage

Gate Current

Drain Current

Allowable Power Dissipation

Junction Temperature

Storage Temperature

GDO

Tstg

--20

100

150

--55to+150

min

--20

--0.2

140g

0.4

unit

°C

typ

--0.6

1.2

4.1

0.88

max

--1.5

500g

unit

µA

Electrical Characteristics / Ta=25°C

G-D Breakdown Voltage

( BR)GDO

G =--

100µA

GS(

off

)

DS=

5V, I

1µA

Cutoff Voltage

DSS

DS=

5V, V

GS=

Drain Current

| Yfs |

DS=

5V, V

GS=

0, f=1kHz

Forward Transfer Admittance

Ciss

DS=

5V, V

GS=

0, f=1MHz

Input Capacitance

DS=

5V, V

GS=

0, f=1MHz

Crss

Reverce Transfer Capacitance

: The TS788 is classified by I

DSS

as follows : (unit :

µA)

Marking

DSS

140 to 240

210 to 350

320 to 500

[Ta=25°C, VCC=4.5V, RL=1kΩ, CIN=15pF, See specified Test Circuit.]

Voltage Gain

Reduced Voltage Characteristics

Frequency Characteristics

Input Resistance

Output Resistance

Total Harmonic Distortion

Output Noise Voltage

Test Circuit

Voltage Gain

Frequency Characteristics

Distortion

Reduced Voltage Characteristics

1kΩ

Vcc=4.5V

Vcc=1.5V

0.2

min

typ

--3.0

--1.2

max

--3.5

--1.0

unit

mΩ

Ω

∆G

THD

IN=

10mV, f=1kHz

IN=

10mV, f=1kHz

CC=

4.5→1.5V

f=1kHz to 110Hz

f=1kHz

VIN=30mV, f=1kHz

VIN=0

, A curve

700

1.0

--110

Package Dimensions

SMCP (unit : mm)

0.3

0.8

1.0

1.6

0.1

0 to 0.1

0.4

15pF

33uF

OSC

SANYO Electric Co., Ltd. Semiconductor Business Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN

971128TM2fXHD

0.6

0.75

VTVM V THD B A

1kΩ Output Impedance

1 : Drain

2 : Source

3 : Gate

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TS788E4相似产品对比

	TS788E4	TS788E5	TS788E6
描述	Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SMCP, 3 PIN	Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SMCP, 3 PIN	Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SMCP, 3 PIN
厂商名称	SANYO	SANYO	SANYO
包装说明	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
针数	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99
配置	SINGLE	SINGLE	SINGLE
最大漏极电流 (ID)	0.001 A	0.001 A	0.001 A
FET 技术	JUNCTION	JUNCTION	JUNCTION
JESD-30 代码	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
元件数量	1	1	1
端子数量	3	3	3
工作模式	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
最高工作温度	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	0.1 W	0.1 W	0.1 W
认证状态	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON

TS788E4

TS788E4概述

TS788E4规格参数

TS788E4文档预览

TS788E4相似产品对比

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