®
VIPer12ADIP
VIPer12AS
LOW POWER OFF LINE SMPS PRIMARY SWITCHER
TYPICAL POWER CAPABILITY
Mains type
European
(195 - 265 Vac)
US / Wide range
(85 - 265 Vac)
SO-8
8W
5W
DIP8
13 W
8W
SO-8
DIP-8
ORDER CODES
PACKAGE
n
n
n
n
FIXED 60 KHZ SWITCHING FREQUENCY
9V TO 38V WIDE RANGE V
DD
VOLTAGE
CURRENT MODE CONTROL
AUXILIARY UNDERVOLTAGE LOCKOUT
WITH HYSTERESIS
SOURCE
SO-8
DIP-8
TUBE
T&R
VIPer12AS
VIPer12AS
13TR
VIPer12ADIP
n
HIGH VOLTAGE START UP CURRENT
n
OVERTEMPERATURE, OVERCURRENT AND
OVERVOLTAGE PROTECTION WITH
AUTORESTART
DESCRIPTION
The VIPer12A combines a dedicated current mode
PWM controller with a high voltage Power
BLOCK DIAGRAM
O
so
b
te
le
REGULATOR
r
P
_
+
uc
od
ON/OFF
s)
t(
bs
-O
60kHz
OSCILLATOR
MOSFET on the same silicon chip. Typical
applications cover off line power supplies for
battery charger adapters, standby power supplies
for TV or monitors, auxiliary supplies for motor
control, etc. The internal control circuit offers the
following benefits:
– Large input voltage range on the V
DD
pin
accommodates changes in auxiliary supply
voltage. This feature is well adapted to battery
charger adapter configurations.
– Automatic burst mode in low load condition.
– Overvoltage protection in hiccup mode.
et
l
o
P
e
od
r
s)
t(
uc
DRAIN
INTERNAL
SUPPLY
OVERTEMP.
DETECTOR
R1
S
FF
PWM
LATCH
Q
R2 R3 R4
VDD
8/14.5V
+
BLANKING
OVERVOLTAGE
LATCH
Q
1 kΩ
_
0.23 V
+
42V
_
S
R
FF
230
Ω
FB
SOURCE
November 2003
1/15
VIPer12ADIP / VIPer12AS
PIN FUNCTION
Name
Function
Power supply of the control circuits. Also provides a charging current during start up thanks to a high
voltage current source connected to the drain. For this purpose, an hysteresis comparator monitors the
V
DD
voltage and provides two thresholds:
- V
DDon
: Voltage value (typically 14.5V) at which the device starts switching and turns off the start up
current source.
- V
DDoff
: Voltage value (typically 8V) at which the device stops switching and turns on the start up current
source.
Power MOSFET source and circuit ground reference.
Power MOSFET drain. Also used by the internal high voltage current source during start up phase for
charging the external V
DD
capacitor.
Feedback input. The useful voltage range extends from 0V to 1V, and defines the peak drain MOSFET
current. The current limitation, which corresponds to the maximum drain current, is obtained for a FB pin
shorted to the SOURCE pin.
V
DD
SOURCE
DRAIN
FB
CURRENT AND VOLTAGE CONVENTIONS
I
DD
I
D
I
FB
FB
VDD
CONTROL
DRAIN
V
DD
V
FB
VIPer12A
SOURCE
CONNECTION DIAGRAM
SOURCE
SOURCE
1
2
3
4
O
so
b
te
le
VDD
r
P
FB
uc
od
8
7
6
5
DRAIN
DRAIN
DRAIN
DRAIN
s)
t(
bs
-O
et
l
o
1
2
3
4
P
e
V
D
od
r
s)
t(
uc
SOURCE
SOURCE
FB
VDD
8
7
6
5
DRAIN
DRAIN
DRAIN
DRAIN
SO-8
DIP8
2/15
VIPer12ADIP / VIPer12AS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS(sw)
V
DS(st)
I
D
V
DD
I
FB
V
ESD
T
j
T
c
T
stg
Parameter
Switching Drain Source Voltage (T
j
=25 ... 125°C)
Start Up Drain Source Voltage (T
j
=25 ... 125°C)
Continuous Drain Current
Supply Voltage
Feedback Current
Electrostatic Discharge:
Machine Model (R=0Ω; C=200pF)
Charged Device Model
Junction Operating Temperature
Case Operating Temperature
Storage Temperature
(See note 1)
(See note 2)
Value
-0.3 ... 730
-0.3 ... 400
Internally limited
0 ... 50
3
200
1.5
Internally limited
-40 to 150
-55 to 150
Unit
V
V
A
V
mA
V
kV
°C
°C
°C
Note: 1. This parameter applies when the start up current source is off. This is the case when the V
DD
voltage has reached V
DDon
and
remains above V
DDoff
.
2. This parameter applies when the start up current source is on. This is the case when the V
DD
voltage has not yet reached V
DDon
or has fallen below V
DDoff
.
THERMAL DATA
Symbol
Rthj-case
Parameter
Thermal Resistance Junction-Pins for:
SO-8
DIP8
Thermal Resistance Junction-Ambient for:
SO-8
DIP8
Rthj-amb
Note: 1. When mounted on a standard single-sided FR4 board with 200 mm² of Cu (at least 35
µm
thick) connected to all DRAIN pins.
ELECTRICAL CHARACTERISTICS
(T
j
=25°C, V
DD
=18V, unless otherwise specified)
POWER SECTION
Symbol
BV
DSS
I
DSS
R
DSon
t
f
Parameter
Drain-Source Voltage
Off State Drain Current
Static Drain-Source
On State Resistance
O
so
b
C
oss
t
r
te
le
Fall Time
r
P
uc
od
I
D
=1mA; V
FB
=2V
V
DS
=500V; V
FB
=2V; T
j
=125°C
I
D
=0.2A
I
D
=0.2A; T
j
=100°C
I
D
=0.1A; V
IN
=300V
I
D
=0.2A; V
IN
=300V
V
DS
=25V
(See fig.1)
(See note 1)
(See fig.1)
(See note 1)
s)
t(
Test Conditions
so
b
-O
(See note 1)
(See note 1)
te
le
r
P
Max Value
25
15
od
55
45
s)
t(
uc
Unit
°C/W
°C/W
Min.
730
Typ.
Max.
Unit
V
0.1
27
30
54
mA
Ω
ns
ns
pF
100
50
40
Rise Time
Drain Capacitance
Note: 1. On clamped inductive load
3/15
VIPer12ADIP / VIPer12AS
ELECTRICAL CHARACTERISTICS
(T
j
=25°C, V
DD
=18V, unless otherwise specified)
SUPPLY SECTION
Symbol
I
DDch
I
DDoff
I
DD0
I
DD1
D
RST
V
DDoff
V
DDon
V
DDhyst
V
DDovp
Parameter
Start Up Charging
Current
Start Up Charging
Current
in Thermal Shutdown
Test Conditions
V
DS
=100V; V
DD
=5V ...V
DDon
(See fig. 2)
V
DD
=5V; V
DS
=100V
T
j
> T
SD
- T
HYST
0
3
(Note 1)
(See fig. 3)
(See fig. 2 & 3)
(See fig. 2 & 3)
(See fig. 2)
7
13
5.8
38
4.5
16
8
14.5
6.5
9
16
5
Min.
Typ.
-1
Max.
Unit
mA
mA
mA
mA
%
V
V
Operating Supply Current I =2mA
FB
Not Switching
Operating Supply Current I =0.5mA; I =50mA
FB
D
Switching
Restart Duty Cycle
V
DD
Undervoltage
Shutdown Threshold
V
DD
Start Up Threshold
V
DD
Threshold
Hysteresis
V
DD
Overvoltage
Threshold
Note: 1. These test conditions obtained with a resistive load are leading to the maximum conduction time of the device.
OSCILLATOR SECTION
Symbol
F
OSC
Parameter
Oscillator Frequency
Total Variation
Test Conditions
V
DD
=V
DDoff
... 35V; T
j
=0 ... 100°C
PWM COMPARATOR SECTION
Symbol
G
ID
I
Dlim
I
FBsd
R
FB
t
d
t
b
Parameter
I
FB
to I
D
Current Gain
Peak Current Limitation
I
FB
Shutdown Current
FB Pin Input Impedance
O
so
b
t
ONmin
T
SD
T
HYST
te
le
Current Sense Delay to
Turn-Off
Blanking Time
r
P
uc
od
V
FB
=0V
s)
t(
Test Conditions
(See fig. 4)
(See fig. 4)
(See fig. 4)
(See fig. 4)
b
-O
so
et
l
P
e
Min.
54
Min.
od
r
Typ.
60
42
s)
t(
uc
7.2
46
V
V
Max.
66
Unit
kHz
Typ.
320
Max.
Unit
0.32
0.4
0.9
1.2
200
500
700
0.48
A
mA
kΩ
ns
ns
ns
I
D
=0mA
I
D
=0.2A
Minimum Turn On Time
OVERTEMPERATURE SECTION
Symbol
Parameter
Thermal Shutdown
Temperature
Thermal Shutdown
Hysteresis
Test Conditions
(See fig. 5)
(See fig. 5)
Min.
140
Typ.
170
40
Max.
Unit
°C
°C
4/15
VIPer12ADIP / VIPer12AS
Figure 1 :
Rise and Fall Time
I
D
C
C << Coss
L
D
t
V
DS
FB
VDD
CONTROL
DRAIN
90%
SOURCE
300V
t
fv
t
rv
VIPer12A
10%
t
Figure 2 :
Start Up VDD Current
I
DD
I
DD0
V
DDhyst
V
DDoff
I
DDch
V
DDon
V
DD
V
DS
= 100 V
F
sw
= 0 kHz
Figure 3 :
Restart Duty Cycle
V
DD
O
so
b
V
DDon
V
DDoff
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
VDD
DRAIN
10
µ
F
FB
CONTROL
100V
SOURCE
t
CH
t
ST
t
2V
tST
D RST
= -------------------------
t ST
+
tCH
VIPer12A
5/15
单片机
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