UTRON
Preliminary Rev. 0.1
UT62L1024(I)
128K X 8 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The UT62L1024 is a 1,048,576-bit low power
CMOS static random access memory organized as
131,072 words by 8 bits. It is fabricated using high
performance, high reliability CMOS technology.
Easy memory expansion is provided by using two
chip enable input (
CE
1
,CE2) and supports
industrial operating temperature range.
The UT62L1024 operates from a wide range
2.5V~3.6V power supply and all inputs and outputs
are fully TTL compatible.
FEATURES
Access time : 55/70ns (max.)
Low power consumption :
Operating : 30/20 mA (typical)
Standby : 10µA (max) L-version T
A
＝
50
℃
3µA (max) LL-version T
A
＝
50
℃
Power supply range : 2.5V ~ 3.6V
All inputs and outputs TTL compatible
Fully static operation
Data retention voltage : 2V (min.)
Operation Temperature
Industrial : -40
℃
~+85
℃
Package : 32-pin 450mil SOP
32-pin 8x20mm TSOP-1
32-pin 8x13.4mm STSOP
36-pin 6×8mm TFBGA
FUNCTIONAL BLOCK DIAGRAM
2048
×
512
MEMORY
ARRAY
A0-A16
DECODER
Vcc
Vss
I/O1-I/O8
I/O DATA
CIRCUIT
COLUMN I/O
CE1
CE2
OE
WE
CONTROL
CIRCUIT
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
P80078
1
UTRON
Preliminary Rev. 0.1
UT62L1024(I)
128K X 8 BIT LOW POWER CMOS SRAM
PIN CONFIGURATION
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
1
2
3
4
32
31
30
29
Vcc
A15
CE2
WE
A
B
C
D
E
F
G
H
A0
I/O5
I/O6
Vss
Vcc
I/O7
I/O8
A9
A1
A2
CE2
A3
A4
A5
A6
A7
A8
I/O1
I/O2
Vcc
Vss
WE
NC
UT62L1024
SOP
5
6
7
8
9
10
11
12
13
14
15
16
28
27
26
25
24
23
22
21
20
19
18
17
A13
A8
A9
A11
OE
A10
CE1
NC
NC
A16
A12
A15
A13
I/O3
I/O4
A14
I/O8
I/O7
I/O6
I/O5
I/O4
OE
CE1
A10 A11
1
2
3
4
5
6
TFBGA
A11
A9
A8
A13
WE
CE2
A15
Vcc
NC
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
UT62L1024
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A10
CE
1
OE
PIN DESCRIPTION
SYMBOL
A0 - A16
I/O1 - I/O8
CE
1
,CE2
WE
OE
V
CC
V
SS
NC
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip enable 1,2 Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
I/O8
I/O7
I/O6
I/O5
I/O4
Vss
I/O3
I/O2
I/O1
A0
A1
A2
A3
TSOP-1/STSOP
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
P80078
2
UTRON
Preliminary Rev. 0.1
UT62L1024(I)
128K X 8 BIT LOW POWER CMOS SRAM
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
Terminal Voltage with Respect to Vss
Operating Temperature
Industrial
Storage Temperature
Power Dissipation
DC Output Current
Soldering Temperature (under 10 sec)
SYMBOL
V
TERM
T
A
T
STG
P
D
I
OUT
T
solder
RATING
-0.5 to Vcc+0.5
-40 to +85
-65 to +150
1
50
260
UNIT
V
℃
℃
W
mA
℃
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Standby
Output Disable
Read
Write
CE
1
H
X
L
L
L
CE2
X
L
H
H
H
OE
X
X
H
L
X
WE
X
X
H
H
L
I/O OPERATION
High - Z
High -Z
High - Z
D
OUT
D
IN
SUPPLY CURRENT
I
SB
,
I
SB1
I
SB
,
I
SB1
I
CC
, I
CC
1
I
CC
, I
CC
1
I
CC
, I
CC
1,
Note: H = V
IH
, L=V
IL
, X = Don't care.
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
P80078
3
UTRON
Preliminary Rev. 0.1
UT62L1024(I)
128K X 8 BIT LOW POWER CMOS SRAM
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 2.5V~3.6V, T
A
= -40
℃
~+85
℃
)
PARAMETER
Input High Voltage
Input Low Voltage
Input Leakage Current
SYMBOL TEST CONDITION
MIN. TYP. MAX.
2.0
-
V
CC
+0.5
V
IH
- 0.5
-
0.6
V
IL
V
SS
≦
V
IN
≦
V
CC
I
IL
-1
-
1
V
SS
≦
V
I/O
≦
V
CC
Output Leakage Current I
OL
CE
1
=V
IH
or CE2 = V
IL
or
-1
-
1
OE
= V
IH
or
WE
= V
IL
Output High Voltage
V
OH
I
OH
= - 1mA
2.0
-
-
Output Low Voltage
V
OL
I
OL
= 2.1mA
-
-
0.4
55
-
30
40
Cycle time = Min.,100% Duty,
I
CC
70
-
20
30
CE
1
=V
IL
, CE2 = V
IH
,I
I/O
=0mA
Average Operating
Power Supply Courrent
Cycle time = 1µs, 100% Duty,
-
-
5
I
CC1
.
CE
1
≦
0.2V,CE2
≧
V
CC
-0.2V, I
I/O
= 0mA
I
SB
Standby Power
Supply Current
I
SB1
CE
1
=V
IH
or CE2 = V
IL
CE
1
≧
V
CC
-0.2V - L
or
.CE2
≦
0.2V
-
LL
T
A
= -40℃~+85℃
T
A
=+50℃
T
A
= -40℃~+85℃
T
A
=+50℃
UNIT
V
V
µA
µA
V
V
mA
mA
mA
mA
µA
µA
-
-
-
-
-
-
-
-
-
-
1.0
50
10
10
3
CAPACITANCE
(T
A
=25
℃
, f=1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX.
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.4V to 2.2V
5ns
1.5V
C
L
=30pF, I
OH
/I
OL
=-1mA/2.1mA
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
P80078
4
UTRON
Preliminary Rev. 0.1
UT62L1024(I)
128K X 8 BIT LOW POWER CMOS SRAM
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 2.5V~3.6V , T
A
= -40
℃
~+85
℃
)
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write-Time
Output Active from End of Write
Write to Output in High-Z
SYMBOL
t
WC
t
AW
t
CW1
, t
CW2
t
AS
t
WP
t
WR
t
DW
t
DH
t
OW
*
t
WHZ
*
UT62L1024-55
MIN.
MAX.
55
-
50
-
50
-
0
-
40
-
0
-
25
-
0
-
5
-
-
20
UT62L1024-70
MIN.
MAX.
70
-
60
-
60
-
0
-
45
-
0
-
30
-
0
-
5
-
-
25
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SYMBOL
t
RC
t
AA
t
ACE1
, t
ACE2
t
OE
t
CLZ1
*, t
CLZ2
*
t
OLZ
*
t
CHZ1
*, t
CHZ2
*
t
OHZ
*
t
OH
UT62L1024-55
MIN.
MAX.
55
-
-
55
-
55
-
30
10
-
5
-
-
30
-
30
5
-
UT62L1024-70
MIN.
MAX.
70
-
-
70
-
70
-
35
10
-
5
-
-
35
-
35
5
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
*These parameters are guaranteed by device characterization, but not production tested.
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
P80078
5
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