MDFB51
MDFB51
Fast Recovery Diode
Advance Information
Replaces March 1999 version, DS4149-4.0
DS4148-5.0 January 2000
FEATURES
q
q
q
Double side cooling
High surge capability
Low recovery charge
KEY PARAMETERS
V
RRM
2500V
I
F(AV)
2212A
I
FSM
24000A
Q
r
1000
µ
C
t
rr
6.0
µ
s
APPLICATIONS
q
q
q
q
q
Freewheel Diode
D.C. Motor Drives
Welding
High Frequency Rectification
Power Supplies
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
2500
2400
2200
2000
Conditions
MDFB51 25
MDFB51 24
MDFB51 22
MDFB51 20
V
RSM
= V
RRM
+ 100V
Lower voltage grades available.
Outline type code: CB486.
See Package Details for further information.
CURRENT RATINGS
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
case
= 65
o
C
T
case
= 65
o
C
T
case
= 65
o
C
2212
3850
3560
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
case
= 65
o
C
T
case
= 65
o
C
T
case
= 65
o
C
1627
2555
2272
A
A
A
1/8
MDFB51
SURGE RATINGS
Symbol
I
FSM
It
I
FSM
It
2
2
Parameter
Surge (non-repetitive) forward current
Conditions
Max.
24.0
Units
kA
A
2
s
kA
A
2
s
10ms half sine; with 0% V
RRM,
T
j
= 150 C
I t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% V
RRM,
T
j
= 150 C
I t for fusing
2
o
2
o
2880 x 10
3
19.2
1843 x 10
3
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Min.
Max.
0.011
0.021
0.023
0.03
0.06
150
175
44.0
Units
o
dc
Anode dc
Cathode dc
-
-
-
-
-
-
–55
40.0
C/W
o
C/W
C/W
C/W
C/W
o
o
R
th(c-h)
Thermal resistance - case to heatsink
Clamping force 44.0kN
with mounting compound
Foward (conducting)
Double side
Single side
o
o
T
vj
T
stg
-
Virtual junction temperature
Storage temperature range
Clamping force
C
C
o
kN
CHARACTERISTICS
Symbol
V
FM
I
RRM
t
rr
Q
RA1
I
RM
K
V
TO
r
T
V
FRM
Forward voltage
Peak reverse current
Reverse recovery time
Recovered charge (50% chord)
Reverse recovery current
Soft factor
Threshold voltage
Slope resistance
Forward recovery voltage
At T
vj
= 150
o
C
At T
vj
= 150
o
C
di/dt = 1000A/µs, T
j
= 125
o
C
I
F
= 1000A, di
RR
/dt = 100A/µs
T
case
= 150
o
C, V
R
= 100V
Parameter
Conditions
At 1500A peak, T
case
= 25
o
C
At V
RRM
, T
case
= 150
o
C
Typ.
-
-
6.0
-
-
1.8
-
-
-
Max.
1.6
100
Units
V
mA
µs
µC
A
-
V
mΩ
V
-
1000
400
-
1.1
0.3
40
2/8
MDFB51
DEFINITION OF K FACTOR AND Q
RA1
Q
RA1
= 0.5x I
RR
(t
1
+ t
2
)
dI
R
/dt
0.5x I
RR
I
RR
t
1
t
2
k = t
1
/t
2
τ
CURVES
5000
Measured under pulse conditions
4000
Instantaneous forward current, I
F
- (A)
3000
2000
T
j
= 150˚C
1000
T
j
= 25˚C
0
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous forward voltage, V
F
- (V)
Figure 1 Maximim (limit) forward characteristics
3/8
MDFB51
500
Measured under
pulse conditions
400
Instantaneous forward current, I
F
- (A)
300
T
j
= 150˚C
T
j
= 25˚C
200
100
0
0.8
1.0
1.2
1.4
1.6
Instantaneous forward voltage, V
F
- (V)
Figure 2 Maximim (limit) forward characteristics
65
Current
waveform
V
FR
55
δy
Transient forward votage, V
FP
- (V)
Voltage
waveform
di =
δy
dt
δx
δx
45
T
j
= 125˚C limit
35
25
T
j
= 25˚C limit
15
0
500
1000
1500
2000
Rate of rise of forward current, dI
F
/dt - (A/µs)
Figure 3 Transient forward voltage vs rate of rise of forward current
4/8
MDFB51
100000
I
F
Q
S
=
∫
50µs
0
Conditions:
T
j
= 150˚C,
V
R
= 100V
Q
S
Reverse recovered charge, Q
S
- (µC)
t
p
= 1ms
dI
R
/dt
10000
I
RR
A
B
C
D
1000
F
E
A: I
F
= 4000A
B: I
F
= 2000A
C: I
F
= 1000A
D: I
F
= 500A
E: I
F
= 200A
F: I
F
= 100A
1
10
100
Rate of rise of reverse current, dI
R
/dt - (A/µs)
1000
100
Figure 4 Recovered charge
10000
Conditions:
T
j
= 150˚C,
V
R
= 100V
Reverse recovery current, I
RR
- (A)
1000
A
B
C
D
E
F
100
A: I
F
= 4000A
B: I
F
= 2000A
C: I
F
= 1000A
D: I
F
= 500A
E: I
F
= 200A
F: I
F
= 100A
10
1
10
100
Rate of rise of reverse current, dI
R
/dt - (A/µs)
1000
Figure 5 Maximum reverse recovery current vs rate of fall of forward current
5/8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
