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MT29F8G08AABWGXXXXET

产品描述Flash, 1GX8, PDSO48, TSOP1-48
产品类别存储    存储   
文件大小731KB,共57页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
下载文档 详细参数 全文预览

MT29F8G08AABWGXXXXET概述

Flash, 1GX8, PDSO48, TSOP1-48

MT29F8G08AABWGXXXXET规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Micron Technology
零件包装代码TSOP1
包装说明TSOP1,
针数48
Reach Compliance Codecompliant
ECCN代码3A991.B.1.A
JESD-30 代码R-PDSO-G48
JESD-609代码e0
长度18.4 mm
内存密度8589934592 bit
内存集成电路类型FLASH
内存宽度8
功能数量1
端子数量48
字数1073741824 words
字数代码1000000000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织1GX8
封装主体材料PLASTIC/EPOXY
封装代码TSOP1
封装形状RECTANGULAR
封装形式SMALL OUTLINE, THIN PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)235
编程电压2.7 V
认证状态Not Qualified
座面最大高度1.2 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距0.5 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
类型SLC NAND TYPE
宽度12 mm

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2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory
Features
NAND Flash Memory
MT29F2G08AABWP/MT29F2G16AABWP
MT29F4G08BABWP/MT29F4G16BABWP
MT29F8G08FABWP
Features
• Organization:
• Page size:
x8: 2,112 bytes (2,048 + 64 bytes)
x16: 1,056 words (1,024 + 32 words)
• Block size: 64 pages (128K + 4K bytes)
• Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks;
8Gb: 8,192 blocks
• Read performance:
• Random read: 25µs
• Sequential read: 30ns (3V x8 only)
• Write performance:
• Page program: 300µs (typ)
• Block erase: 2ms (typ)
• Endurance: PROGRAM/ERASE cycles
(with ECC and invalid block mapping)
• First block (block address 00h) guaranteed to be
valid without ECC (up to 1,000 PROGRAM/ERASE
cycles)
• V
CC
: 2.7V–3.6V
• Automated PROGRAM and ERASE
• Basic NAND command set:
• PAGE READ, RANDOM DATA READ, READ ID,
READ STATUS, PROGRAM PAGE, RANDOM
DATA INPUT, PROGRAM PAGE CACHE MODE,
INTERNAL DATA MOVE, INTERNAL DATA MOVE
with RANDOM DATA INPUT, BLOCK ERASE,
RESET
• New commands:
• PAGE READ CACHE MODE
• READ UNIQUE ID (contact factory)
• READ ID2 (contact factory)
• Operation status byte provides a software method of
detecting:
• PROGRAM/ERASE operation completion
• PROGRAM/ERASE pass/fail condition
• Write-protect status
• Ready/busy# (R/B#) pin provides a hardware
method of detecting PROGRAM or ERASE cycle
completion
• PRE pin: prefetch on power up
• WP# pin: hardware write protect
09005aef818a56a7 pdf/09005aef81590bdd source
2gb_nand_m29b__1.fm - Rev. C 5/05 EN
Figure 1:
48-PIN TSOP Type 1
Options
Marking
• Density:
MT29F2GxxAAB
2Gb (single die)
MT29F4GxxBAB
4Gb (dual-die stack)
MT29F8GxxFAB
8Gb (quad-die stack)
• Device width:
MT29Fxx08x
x8
MT29Fxx16x
x16
• Configuration: # of die # of CE# # of R/B#
1
1
1
A
2
1
1
B
4
2
2
F
A
• V
CC
: 2.7V–3.6V
• Second generation die
B
• Package:
48 TSOP type I (lead-free plating)
WP
48 TSOP type I (contact factory)
WG
• Operating temperature:
Commercial (0–70°C)
Extended temperature
ET
(-40°C to +85°C)
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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