BC846 series
65 V, 100 mA NPN general-purpose transistors
Rev. 8 — 24 April 2012
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
BC846
BC846W
BC846T
[1]
Type number
[1]
PNP complement
JEITA
-
SC-70
SC-75
JEDEC
TO-236AB
-
-
BC856
BC856W
BC856T
SOT23
SOT323
SOT416
Valid for all available selection groups.
1.2 Features and benefits
General-purpose transistors
SMD plastic packages
Two different gain selections
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
h
FE
group A
h
FE
group B
V
CE
= 5 V; I
C
= 2 mA
Conditions
open base
Min
-
-
110
110
200
Typ
-
-
-
180
290
Max
65
100
450
220
450
Unit
V
mA
NXP Semiconductors
BC846 series
65 V, 100 mA NPN general-purpose transistors
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
base
emitter
collector
1
2
006aaa144
Simplified outline
Graphic symbol
SOT23, SOT323, SOT416
3
1
2
sym021
3
3. Ordering information
Table 4.
Ordering information
Package
Name
BC846
BC846W
BC846T
[1]
Type number
[1]
Description
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 3 leads
Version
SOT23
SOT323
SOT416
-
SC-70
SC-75
Valid for all available selection groups.
4. Marking
Table 5.
BC846
BC846A
BC846B
BC846W
BC846AW
BC846BW
BC846T
BC846AT
BC846BT
[1]
* = placeholder for manufacturing site code
Marking codes
Marking code
[1]
1D*
1A*
1B*
1D*
1A*
1B*
1M
1A
1B
Type number
BC846_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 8 — 24 April 2012
2 of 15
NXP Semiconductors
BC846 series
65 V, 100 mA NPN general-purpose transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
SOT23
SOT323
SOT416
T
j
T
amb
T
stg
[1]
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
Min
-
-
-
-
-
-
Max
80
65
6
100
200
200
Unit
V
V
V
mA
mA
mA
-
-
-
-
−65
−65
250
200
150
150
+150
+150
W
W
W
°C
°C
°C
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT23
SOT323
SOT416
[1]
Conditions
in free air
[1]
Min
Typ
Max
Unit
-
-
-
-
-
-
500
625
833
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BC846_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 8 — 24 April 2012
3 of 15
NXP Semiconductors
BC846 series
65 V, 100 mA NPN general-purpose transistors
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
h
FE
group A
h
FE
group B
DC current gain
h
FE
group A
h
FE
group B
V
CEsat
V
BEsat
V
BE
f
T
C
c
C
e
NF
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage
transition frequency
collector capacitance
emitter capacitance
noise figure
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
V
CE
= 5 V; I
C
= 10 mA;
f = 100 MHz
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
V
EB
= 0.5 V; I
C
= i
c
= 0 A;
f = 1 MHz
I
C
= 200
μA;
V
CE
= 5 V;
R
S
= 2 kΩ; f = 1 kHz;
B = 200 Hz
[1]
[2]
[2]
[3]
[3]
Conditions
V
CB
= 30 V; I
E
= 0 A
V
CB
= 30 V; I
E
= 0 A;
T
j
= 150
°C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 10
μA
Min
-
-
-
Typ
-
-
-
Max
15
5
100
Unit
nA
μA
nA
I
EBO
h
FE
-
-
V
CE
= 5 V; I
C
= 2 mA
110
110
200
-
-
-
-
580
-
100
-
-
-
180
290
-
180
290
90
200
760
900
660
-
-
2
11
2
-
-
450
220
450
200
400
-
-
700
770
-
3
-
10
mV
mV
mV
mV
mV
mV
MHz
pF
pF
dB
[1]
[2]
[3]
Pulse test: t
p
≤
300
μs; δ
= 0.02.
V
BEsat
decreases by approximately 1.7 mV/K with increasing temperature.
V
BE
decreases by approximately 2 mV/K with increasing temperature.
BC846_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 8 — 24 April 2012
4 of 15
NXP Semiconductors
BC846 series
65 V, 100 mA NPN general-purpose transistors
400
h
FE
(1)
mgt723
1200
V
BE
(mV)
1000
(1)
mgt724
300
800
(2)
200
(2)
600
(3)
(3)
400
100
200
0
10
−1
1
10
10
2
I
C
(mA)
10
3
0
10
−1
1
10
10
2
I
C
(mA)
10
3
V
CE
= 5 V
(1) T
amb
= 150
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−55 °C
V
CE
= 5 V
(1) T
amb
=
−55 °C
(2) T
amb
= 25
°C
(3) T
amb
= 150
°C
Fig 1.
Selection A: DC current gain as a function of
collector current; typical values
10
3
mgt725
Fig 2.
Selection A: Base-emitter voltage as a function
of collector current; typical values
mgt726
1200
V
BEsat
(mV)
1000
(1)
V
CEsat
(mV)
800
(2)
10
2
(1)
(2)
(3)
600
(3)
400
200
10
10
−1
1
10
10
2
I
C
(mA)
10
3
0
10
−1
1
10
10
2
I
C
(mA)
10
3
I
C
/I
B
= 20
(1) T
amb
= 150
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−55 °C
I
C
/I
B
= 10
(1) T
amb
=
−55 °C
(2) T
amb
= 25
°C
(3) T
amb
= 150
°C
Fig 3.
Selection A: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 4.
Selection A: Base-emitter saturation voltage
as a function of collector current; typical
values
BC846_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 8 — 24 April 2012
5 of 15
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