MMBV2101LT1 Series,
MV2105, MV2101, MV2109,
LV2205, LV2209
Silicon Tuning Diodes
6.8–100 pF, 30 Volts
Voltage Variable Capacitance Diodes
These devices are designed in popular plastic packages for the high
volume requirements of FM Radio and TV tuning and AFC, general
frequency control and tuning applications. They provide solid–state
reliability in replacement of mechanical tuning methods. Also
available in a Surface Mount Package up to 33 pF.
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3
Cathode
SOT–23
1
Anode
•
•
•
•
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance – 10%
Complete Typical Design Curves
2
Cathode
TO–92
1
Anode
MARKING
DIAGRAM
3
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Forward Power Dissipation
@ T
A
= 25°C
MMBV21xx
Derate above 25°C
@ T
A
= 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
MV21xx
LV22xx
T
J
T
stg
Symbol
V
R
I
F
P
D
225
1.8
280
2.8
+150
–55 to +150
°C
°C
1
Value
30
200
Unit
Vdc
mAdc
mW
mW/°C
1
2
XXX M
TO–236AB, SOT–23
CASE 318–08
STYLE 8
XXX
= Device Code*
M
= Date Code
* See Table
XX
XXXX
YWW
DEVICE MARKING
MMBV2101LT1 = M4G
MMBV2103LT1 = 4H
MMBV2105LT1 = 4U
MMBV2107LT1 = 4W
MMBV2108LT1 = 4X
MMBV2109LT1 = 4J
MV2101 = MV2101
MV2105 = MV2105
MV2109 = MV2109
LV2205 = LV2205
LV2209 = LV2209
2
TO–226AC, TO–92
CASE 182
STYLE 1
XX
= Device Code Line 1*
XXXX = Device Code Line 2*
M
= Date Code
* See Table
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
= 10
µAdc)
MMBV21xx, MV21xx
LV22xx
Reverse Voltage Leakage
Current
(V
R
= 25 Vdc, T
A
= 25°C)
Diode Capacitance
Temperature Coefficient
(V
R
= 4.0 Vdc, f = 1.0 MHz)
Symbol
V
(BR)R
30
25
I
R
–
–
–
–
–
–
0.1
µAdc
Min
Typ
Max
Unit
Vdc
Preferred
devices are recommended choices for future use
and best overall value.
TC
C
–
280
–
ppm/°C
©
Semiconductor Components Industries, LLC, 2001
685
October, 2001 – Rev. 3
Publication Order Number:
MMBV2101LT1/D
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
C
T
, Diode Capacitance
V
R
= 4.0 Vdc, f = 1.0 MHz
pF
Device
MMBV2101LT1/MV2101
MMBV2103LT1
LV2205/MMBV2105LT1/MV2105
MMBV2107LT1
MMBV2108LT1
LV2209MMBV2109LT1/MV2109
Min
6.1
9.0
13.5
19.8
24.3
29.7
Nom
6.8
10
15
22
27
33
Max
7.5
11
16.5
24.2
29.7
36.3
Q, Figure of Merit
V
R
= 4.0 Vdc,
f = 50 MHz
Typ
450
400
400
350
300
200
Min
2.5
2.5
2.5
2.5
2.5
2.5
TR, Tuning Ratio
C
2
/C
30
f = 1.0 MHz
Typ
2.7
2.9
2.9
2.9
3.0
3.0
Max
3.2
3.2
3.2
3.2
3.2
3.2
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1,
are also available in bulk. Use the device title and
drop the ”T1” suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
1. C
T
, DIODE CAPACITANCE
(C
T
= C
C
+ C
J
). C
T
is measured at 1.0 MHz using a
capacitance bridge (Boonton Electronics Model 75A or
equivalent).
2. TR, TUNING RATIO
4. TC
C
, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TC
C
is guaranteed by comparing C
T
at V
R
= 4.0 Vdc, f = 1.0
MHz, T
A
= –65°C with C
T
at V
R
= 4.0 Vdc, f = 1.0 MHz, T
A
= +85°C in the following equation, which defines TC
C
:
TCC
+
CT() 85°C) – CT(–65°C)
106
·
85
)
65
CT(25°C)
TR is the ratio of C
T
measured at 2.0 Vdc divided by C
T
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an
admittance bridge at the specified frequency and
substituting in the following equations:
Q
+
2pfC
G
Accuracy limited by measurement of C
T
to
±0.1
pF.
(Boonton Electronics Model 33AS8 or equivalent). Use
Lead Length
[
1/16”.
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686
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
TYPICAL DEVICE CHARACTERISTICS
1000
500
C T , DIODE CAPACITANCE (pF)
200
100
50
20
10
5.0
2.0
1.0
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
MMBV2109LT1/MV2109
MMBV2105LT1/MV2105
MMBV2101LT1/MV2101
T
A
= 25°C
f = 1.0 MHz
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus Reverse Voltage
1.040
NORMALIZED DIODE CAPACITANCE
I R , REVERSE CURRENT (nA)
1.030
1.020
1.010
1.000
0.990
0.980
0.970
0.960
-75
-50
NORMALIZED TO C
T
at T
A
= 25°C
V
R
= (CURVE)
-25
0
+25
+50
+75
T
J
, JUNCTION TEMPERATURE (°C)
+100
+125
V
R
= 4.0 Vdc
V
R
= 30 Vdc
V
R
= 2.0 Vdc
100
50
20
10
5.0
2.0
1.0
0.50
0.20
0.10
0.05
0.02
0.01
0
5.0
10
15
20
25
30
T
A
= 75°C
T
A
= 125°C
T
A
= 25°C
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Normalized Diode Capacitance versus
Junction Temperature
5000
3000
2000
Q, FIGURE OF MERIT
1000
500
300
200
100
50
30
20
10
1.0
2.0
10
3.0
5.0
7.0
V
R
, REVERSE VOLTAGE (VOLTS)
T
A
= 25°C
f = 50 MHz
20
30
MMBV2101LT1/MV2101
MMBV2109LT1
Q, FIGURE OF MERIT
5000
3000
2000
1000
500
300
200
100
50
30
20
10
10
Figure 3. Reverse Current versus Reverse Bias
Voltage
MMBV2101LT1/MV2101
T
A
= 25°C
V
R
= 4.0 Vdc
20
MMBV2109LT1/MV2109
100
30
50
70
f, FREQUENCY (MHz)
200
250
Figure 4. Figure of Merit versus Reverse Voltage
Figure 5. Figure of Merit versus Frequency
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