To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
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1.
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“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
GaAs MES FET
NE76184B
L to X BAND OSC
N-CHANNEL GaAs MES FET
NE76184B is a N-channel GaAs MES FET housed in ce-
ramic package. The device is fabricated by ion implantation for
improved RF and DC performance reliability and uniformity.
FEATURES
• Low noise figure & High associated gain
NF = 0.8 dB TYP., G
a
= 12 dB TYP. at f = 4 GHz
1.78 ±0.2
ORDERING INFORMATION
PART NUMBER
NE76184B-T1
NE76184B-T1A
SUPPLYING FORM
Tape & reel 1000 pcs./reel
Tape & reel 5000 pcs./reel
MARKING
J
nt
in
ue
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GSO
V
GDO
I
D
P
tot
T
ch
T
stg
d
5.0
V
–5.0
V
–6.0
V
I
DSS
mA
300
mW
150
˚C
–65 to +150 ˚C
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
is
PARAMETER
co
1. Source
2. Drain
3. Source (OPEN)
4. Gate
SYMBOL
I
GSO
I
DSS
V
GS (off)
g
m
NF
G
a
G
s
MIN.
–
30
–0.5
20
–
–
–
TYP.
–
–
–
45
0.8
12
6
MAX.
10
100
–3.0
–
1.4
–
–
UNIT
TEST CONDITIONS
V
GS
= –5 V
V
DS
= 3 V, V
GS
= 0
V
DS
= 3 V, I
D
= 100
µ
A
V
DS
= 3 V, I
D
= 10 mA
V
DD
= 3 V
I
D
= 10 mA
f = 12 GHz
f = 4 GHz
Gate to Source Leak Current
µ
A
mA
V
mS
dB
dB
dB
Document No. P11061EJ1V0DS00 (1st edition)
Data Published December 1995 P
Printed in Japan
D
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Power Gain
I
DSS
rank is specified as follows. (K: 30 to 100 mA, N: 30 to 65 mA, M: 55 to 100 mA)
©
0.1
1.7 MAX.
Pr
od
uc
t
PACKAGE DIMENSIONS
(Unit: mm)
1.78 ±0.2
1
1.0 ±0.2
1.0 ±0.2
2
DESCRIPTION
J
4
3
0.4 MAX.
1.0 ±0.2
0.5 TYP.
0.5 TYP.
1995
NE76184B
TYPICAL CHARACTERISTICS (T
A
= 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
500
80
P
tot
- Total Power Dissipation - mW
V
GS
= 0 V
400
I
D
- Drain Current - mA
60
–0.2 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
300
40
200
20
100
0
50
100
150
200
T
A
- Ambient Temperature - ˚C
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
80
I
D
- Drain Current - mA
60
40
20
0
–2.0
co
2
D
is
–1.0
V
GS
- Gate to Source Voltage - V
nt
in
ue
V
DS
= 3 V
0
d
Pr
od
uc
t
–0.4 V
–0.6 V
–0.8 V
–1.0 V
4
0
1
2
3
5
V
DS
- Drain to Source Voltage - V
NE76184B
S-PARAMETER
MAG. AND ANG.
V
DS
= 3 V, I
D
= 10 mA
FREQUENCY
MHz
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
17000
18000
S11
MAG.
.920
.834
.741
.680
.637
.612
.591
.585
.589
.596
.606
.613
.630
.649
.664
.671
.683
ANG.
(deg.)
–57.6
–84.6
–110.4
–133.8
–155.9
–177.1
164.0
146.0
128.3
110.9
94.9
78.7
63.2
48.1
31.9
16.5
3.0
MAG.
3.323
3.007
2.661
2.397
2.150
1.940
1.743
1.597
1.491
1.385
1.283
1.207
1.137
1.074
1.021
.956
.914
S21
ANG.
(deg.)
128.6
105.6
84.7
66.0
48.8
32.1
17.2
3.2
–10.5
–23.7
–36.7
–49.5
–61.8
–74.3
–87.4
–100.4
–112.9
MAG.
.074
.097
.110
.116
.117
.117
.115
.116
.121
.130
.140
.159
.175
.196
.220
.241
.266
S12
ANG.
(deg.)
52.8
36.6
23.8
13.2
4.7
–.3
–4.1
–6.9
–7.8
–10.0
–12.9
–16.6
–22.6
–29.9
–38.4
–47.2
–58.0
MAG.
.711
.658
.606
.563
.539
.527
.522
.524
.525
.527
.532
.548
.559
.566
.576
.579
.581
S22
ANG.
(deg.)
–33.6
–48.2
–61.7
–74.7
–87.6
–98.9
–109.8
–121.5
–132.9
–145.2
–157.3
–169.4
178.8
166.8
154.4
141.4
127.9
V
DS
= 3 V, I
D
= 30 mA
FREQUENCY
MHz
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
17000
18000
S11
MAG.
.886
.783
.691
.637
.603
.584
.568
.567
.574
.587
.597
.608
.624
.644
.662
.671
.682
ANG.
(deg.)
–64.9
–93.7
–120.2
–143.9
–165.7
173.9
155.8
138.5
121.5
104.9
89.1
73.5
58.3
43.3
28.1
12.8
–.4
MAG.
4.307
3.753
3.224
2.843
2.516
2.242
2.001
1.827
1.699
1.573
1.456
1.370
1.292
1.215
1.150
1.081
1.030
S21
D
is
co
ANG.
(deg.)
124.9
101.5
81.3
63.4
47.0
31.1
16.8
3.4
–9.9
–22.9
–35.6
–48.1
–60.4
–72.9
–85.7
–98.7
–111.5
d
nt
in
ue
Pr
od
uc
t
S12
S22
MAG.
.061
.076
.087
.094
.098
.103
.110
.119
.130
.145
.162
.182
.200
.223
.248
.262
.285
ANG.
(deg.)
52.7
38.5
29.2
21.3
16.6
13.5
11.0
8.7
5.3
.8
–4.4
–11.0
–19.1
–27.6
–37.4
–47.3
–58.4
MAG.
.614
.561
.514
.479
.460
.455
.453
.461
.467
.471
.479
.497
.513
.524
.539
.546
.545
ANG.
(deg.)
–34.1
–47.9
–60.7
–73.4
–86.3
–97.9
–109.2
–121.2
–133.3
–146.2
–159.0
–171.3
176.5
164.4
151.9
138.7
125.3
3
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