S i 4 11 3 G - X5
RF S
Y N T H E S I Z E R
W
I T H
I
N T E G R A T E D
VCO
S
F
O R
D
U A L A N D
T
R I P L E
- B
A N D
GSM
A N D
G P R S W
I R E L E S S
C
O M M U N I C A T I O N S
Features
RF synthesizers
RF1: 1400 MHz to 1.8 GHz
RF2: 1200 MHz to 1.5 GHz
Integrated VCOs, loop filters,
varactors, and resonators
Minimal (2) external
components required
Infineon SMARTi and SMARTi+
compatible
GPRS Class 12 compliant
Settling time: 140
µs
Low phase noise
Programmable powerdown
modes
1 µA standby current
2.7 V to 3.6 V operation
Package: 28-lead, 5 x 5 mm
MLF package (MLP)
Ordering Information:
See page 22.
Applications
E-GSM 900, DCS 1800, and PCS 1900 mobile handsets
GPRS handsets and data terminals
HSCSD data terminals
Pin Assignments
Si4113GX5-BM
SDATA
SCLK
GND
VDDD
GND
23
28
27
26
25
24
22
21
20
19
S
i4
11
3
G
X
5-
B
M
Description
The Si4113G-X5 is a monolithic integrated circuit that performs RF synthesis
for dual and triple-band GSM and GPRS wireless communications
applications. The Si4113G-X5 includes two VCOs, loop filters, reference and
VCO dividers, and phase detectors. Divider and powerdown settings are
programmable through a three-wire serial interface.
GND
RFLC
RFLC
GND
RFLB
RFLA
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
GND
SEN
GND
GND
GND
GND
VDDD
GND
XIN
GND
18
17
16
15
Functional Block Diagram
GND
GND
RFOUT
AUXOUT
VDDR
XIN
÷65
or
÷130
Power
Down
Control
Phase
Detect
RF1
RFLA
RFLB
RFOUT
RFLC
RFLD
RF2
÷N
RF
Patents pending
PWDN
SDATA
SCLK
SEN
Serial
Interface
AUXOUT
Test
Mux
Rev. 1.0 1/02
Copyright © 2002 by Silicon Laboratories
Si4113GX5-DS10
PWDN
GND
Si4113G-X5
2
Rev. 1.0
Si4113G-X5
T
A B L E O F
C
O N T E N TS
Section
Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Serial Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Setting the VCO Center Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Self-Tuning Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SMARTi+ Frequency Plan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PLL Loop Dynamics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Outputs (RFOUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reference Frequency Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Powerdown Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Auxiliary Output (AUXOUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Control Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Descriptions: Si4113GX5-BM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Outline: Si4113GX5-BM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Document Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Page
4
14
14
14
15
15
16
17
17
17
17
17
18
21
22
23
24
26
Rev. 1.0
3
Si4113G-X5
Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Ambient Temperature
Supply Voltage
Supply Voltages Difference
Symbol
T
A
V
DD
V
∆
(V
DDR
– V
DDD
),
(V
DDI
– V
DDD
)
Test Condition
Min
–20
2.7
–0.3
Typ
25
3.0
—
Max
85
3.6
0.3
Unit
°C
V
V
Note:
All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at 3.0 V and an operating temperature of 25°C unless otherwise stated.
Table 2. Absolute Maximum Ratings
1,2
Parameter
DC Supply Voltage
Input Current
3
Input Voltage
3
Storage Temperature Range
Symbol
V
DD
I
IN
V
IN
T
STG
Value
–0.5 to 4.0
±10
–0.3 to V
DD
+0.3
–55 to 150
Unit
V
mA
V
°C
Notes:
1.
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be
restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2. This device is a high performance RF integrated circuit with an ESD rating of < 2 kV. Handling and assembly of
this device should only be done at ESD-protected workstations.
3.
For signals SCLK, SDATA, SEN, PWDN and XIN.
4
Rev. 1.0
Si4113G-X5
Table 3. DC Characteristics
(V
DD
= 2.7 to 3.6 V, T
A
= –20 to 85 °C
Parameter
RF1 Mode Supply Current
1
RF2 Mode Supply Current
1
Standby Current
High Level Input Voltage
2
Low Level Input Voltage
2
High Level Input Current
2
Low Level Input Current
2
High Level Output Voltage
3
Low Level Output Voltage
3
Symbol
Test Condition
RF1 active
RF2 active
PWDN = 0
Min
—
—
—
0.7 V
DD
—
Typ
13
12
1
—
—
—
—
—
—
Max
17
17
—
—
0.3 V
DD
10
10
—
0.4
Unit
mA
mA
µA
V
V
µA
µA
V
V
V
IH
V
IL
I
IH
I
IL
V
OH
V
OL
V
IH
=
3.6 V,
V
DD
= 3.6 V
V
IL
=
0 V,
V
DD
=
3.6 V
I
OH
= –500 µA
I
OH
= 500 µA
–10
–10
V
DD
–0.4
—
Notes:
1.
RF1 = 1.54 GHz, RF2 = 1.36 GHz
2.
For signals SCLK, SDATA, SEN, and PWDN.
3.
For signal AUXOUT.
Rev. 1.0
5
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