Wide Band Low Power Amplifier, 0MHz Min, 3500MHz Max, 1 Func, BIPolar, SOT-86, 4 PIN
SGA-5486规格参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Qorvo
包装说明
SL,4GW-LD,.085CIR
Reach Compliance Code
unknown
特性阻抗
50 Ω
构造
COMPONENT
增益
15.4 dB
最大输入功率 (CW)
16 dBm
安装特点
SURFACE MOUNT
功能数量
1
端子数量
4
最大工作频率
3500 MHz
最小工作频率
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装等效代码
SL,4GW-LD,.085CIR
电源
3.5 V
射频/微波设备类型
WIDE BAND LOW POWER
最大压摆率
66 mA
表面贴装
YES
技术
BIPOLAR
SGA-5486文档预览
SGA-5486(Z)
DC to
3500MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA-5486(Z)
DC to 3500MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
Package: SOT-86
Product Description
The SGA-5486 is a high performance SiGe HBT MMIC Amplifier. A Darlington config-
uration featuring one-micron emitters provides high F
T
and excellent thermal perfor-
mance. The heterojunction increases breakdown voltage and minimizes leakage
current between junctions. Cancellation of emitter junction non-linearities results in
higher suppression of intermodulation products. Only two DC-blocking capacitors, a
bias resistor, and an optional RF choke are required for operation.
Features
High Gain: 16.3dB at
1950MHz
Cascadable 50Ω
Operates from Single Supply
Low Thermal Resistance
Package
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
Gain (dB)
24
Applications
Gain & Return Loss vs. Frequency
V
D
= 3.6 V, I
D
= 60 mA (Typ.)
0
GAIN
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
18
IRL
-10
-20
ORL
12
6
0
0
1
2
3
Frequency (GHz)
4
5
T
L
=+25ºC
-30
-40
Parameter
Small Signal Gain
Min.
Specification
Typ.
18.8
16.3
15.4
17.0
15.0
32.0
28.0
3500
Max.
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
MHz
850MHz
1950MHz
2400MHz
850MHz
1950MHz
850MHz
1950MHz
>10dB
Return Loss (dB)
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Condition
Output Power at 1dB Compression
Output Third Intercept Point
Bandwidth Determined by Return
Loss
Input Return Loss
14.8
dB
1950MHz
Output Return Loss
27.8
dB
1950MHz
Noise Figure
3.6
dB
1950MHz
Device Operating Voltage
3.1
3.5
3.9
V
Device Operating Current
54
60
66
mA
Thermal Resistance
97
°C/W
(Junction - Lead)
Test Conditions: V
S
=8V, I
D
=60mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm, R
BIAS
=75Ω, T
L
=25°C, Z
S
=Z
L
=50Ω
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-