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SGA-5486

产品描述Wide Band Low Power Amplifier, 0MHz Min, 3500MHz Max, 1 Func, BIPolar, SOT-86, 4 PIN
产品类别无线/射频/通信    射频和微波   
文件大小365KB,共6页
制造商Qorvo
官网地址https://www.qorvo.com
下载文档 详细参数 选型对比 全文预览

SGA-5486概述

Wide Band Low Power Amplifier, 0MHz Min, 3500MHz Max, 1 Func, BIPolar, SOT-86, 4 PIN

SGA-5486规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Qorvo
包装说明SL,4GW-LD,.085CIR
Reach Compliance Codeunknown
特性阻抗50 Ω
构造COMPONENT
增益15.4 dB
最大输入功率 (CW)16 dBm
安装特点SURFACE MOUNT
功能数量1
端子数量4
最大工作频率3500 MHz
最小工作频率
最高工作温度85 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装等效代码SL,4GW-LD,.085CIR
电源3.5 V
射频/微波设备类型WIDE BAND LOW POWER
最大压摆率66 mA
表面贴装YES
技术BIPOLAR

SGA-5486文档预览

SGA-5486(Z)
DC to
3500MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA-5486(Z)
DC to 3500MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
Package: SOT-86
Product Description
The SGA-5486 is a high performance SiGe HBT MMIC Amplifier. A Darlington config-
uration featuring one-micron emitters provides high F
T
and excellent thermal perfor-
mance. The heterojunction increases breakdown voltage and minimizes leakage
current between junctions. Cancellation of emitter junction non-linearities results in
higher suppression of intermodulation products. Only two DC-blocking capacitors, a
bias resistor, and an optional RF choke are required for operation.
Features
High Gain: 16.3dB at
1950MHz
Cascadable 50Ω
Operates from Single Supply
Low Thermal Resistance
Package
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
Gain (dB)
24
Applications
Gain & Return Loss vs. Frequency
V
D
= 3.6 V, I
D
= 60 mA (Typ.)
0
GAIN
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
18
IRL
-10
-20
ORL
12
6
0
0
1
2
3
Frequency (GHz)
4
5
T
L
=+25ºC
-30
-40
Parameter
Small Signal Gain
Min.
Specification
Typ.
18.8
16.3
15.4
17.0
15.0
32.0
28.0
3500
Max.
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
MHz
850MHz
1950MHz
2400MHz
850MHz
1950MHz
850MHz
1950MHz
>10dB
Return Loss (dB)
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Condition
Output Power at 1dB Compression
Output Third Intercept Point
Bandwidth Determined by Return
Loss
Input Return Loss
14.8
dB
1950MHz
Output Return Loss
27.8
dB
1950MHz
Noise Figure
3.6
dB
1950MHz
Device Operating Voltage
3.1
3.5
3.9
V
Device Operating Current
54
60
66
mA
Thermal Resistance
97
°C/W
(Junction - Lead)
Test Conditions: V
S
=8V, I
D
=60mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm, R
BIAS
=75Ω, T
L
=25°C, Z
S
=Z
L
=50Ω
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-100612 Rev D
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6
SGA-5486(Z)
Absolute Maximum Ratings
Parameter
Max Device Current (I
D
)
Max Device Voltage (V
D
)
Max RF Input Power
Max Junction Temp (T
J
)
Operating Temp Range (T
L
)
Max Storage Temp
Rating
120
5
+16
+150
-40 to +85
+150
Unit
mA
V
dBm
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l
Typical Performance at Key Operating Frequencies
Parameter
Unit
100
MHz
500
MHz
850
MHz
1950
MHz
2400
MHz
15.4
26.0
13.6
16.8
25.9
22.0
3.7
3500
MHz
13.2
Small Signal Gain
dB
20.0
19.5
18.8
16.3
Output Third Order Intercept Point
dBm
31.6
32.0
28.0
Output Power at 1dB Compression
dBm
17.0
17.0
15.0
Input Return Loss
dB
26.7
19.5
12.8
14.8
Output Return Loss
dB
19.4
28.1
16.5
27.8
Reverse Isolation
dB
22.5
22.6
23.0
22.7
Noise Figure
dB
3.0
3.1
3.6
Test Conditions: V
S
=8V, I
D
=60mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm, R
BIAS
=75Ω, T
L
=25°C, Z
S
=Z
L
=50Ω
9.5
14.8
19.6
OIP
3
vs. Frequency
V
D
= 3.5 V, I
D
= 60 mA
35
30
OIP
3
(dBm)
P
1dB
vs. Frequency
V
D
= 3.5 V, I
D
= 60 mA
18
16
P
1dB
(dBm)
14
12
10
25
20
T
L
=+25ºC
15
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
T
L
=+25ºC
8
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
Noise Figure vs. Frequency
V
D
= 3.5 V, I
D
= 60 mA
5
4
3
2
1
0
0
0.5
1
1.5
2
Frequency (GHz)
Noise Figure (dB)
T
L
=+25ºC
2.5
3
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
EDS-100612 Rev D
SGA-5486(Z)
|
S
|
vs. Frequency
21
|
S
|
vs. Frequency
11
24
18
S
21
(dB)
V
D
= 3.6 V, I
D
= 60 mA (Typ.)
0
-10
S
11
(dB)
-20
-30
V
D
= 3.6 V, I
D
= 60 mA (Typ.)
12
6
T
L
0
0
1
2
3
Frequency (GHz)
4
+25°C
-40°C
+85°C
T
L
-40
5
+25°C
-40°C
+85°C
0
1
2
3
Frequency (GHz)
4
5
|
S
|
vs. Frequency
12
|
S
|
vs. Frequency
22
-12
-15
-18
-21
V
D
= 3.6 V, I
D
= 60 mA (Typ.)
0
-10
S
22
(dB)
-20
-30
V
D
= 3.6 V, I
D
= 60 mA (Typ.)
S
12
(dB)
T
L
-24
0
1
2
3
Frequency (GHz)
4
+25°C
-40°C
+85°C
T
L
-40
5
+25°C
-40°C
+85°C
0
1
2
3
Frequency (GHz)
4
5
EDS-100612 Rev D
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 6
SGA-5486(Z)
Pin
1
2, 4
3
Function
RF IN
GND
RF OUT/BIAS
Description
RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation.
Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead
inductance.
RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper oper-
ation.
Application Schematic
Frequency (Mhz)
V
S
R
BIAS
Reference
Designator
500
850
1950
2400
3500
C
B
C
D
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
1 uF
1000
pF
C
D
L
C
L
C
Recommended Bias Resistor Values for I
D
=60mA
R
BIAS
=( V
S
-V
D
) / I
D
Supply Voltage(V
S
)
6V
43
8V
75
10 V
110
12 V
150
RF in
C
B
1
SGA-5486
3
2
C
B
4
RF out
R
BIAS
Note: R
BIAS
provides DC bias stability over temperature.
Evaluation Board Layout
V
S
R
BIAS
1 uF
Mounting Instructions
1000 pF
L
C
C
D
C
B
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
A54
C
B
4 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
EDS-100612 Rev D
SGA-5486(Z)
Suggested Pad Layout
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
EDS-100612 Rev D
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 6

SGA-5486相似产品对比

SGA-5486 SGA-5486Z
描述 Wide Band Low Power Amplifier, 0MHz Min, 3500MHz Max, 1 Func, BIPolar, SOT-86, 4 PIN 0MHz - 3500MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, GREEN, SOT-86, 4 PIN
是否Rohs认证 不符合 符合
厂商名称 Qorvo Qorvo
Reach Compliance Code unknown compliant
特性阻抗 50 Ω 50 Ω
构造 COMPONENT COMPONENT
增益 15.4 dB 15.4 dB
最大输入功率 (CW) 16 dBm 16 dBm
最大工作频率 3500 MHz 3500 MHz
最高工作温度 85 °C 85 °C
最低工作温度 -40 °C -40 °C
射频/微波设备类型 WIDE BAND LOW POWER WIDE BAND LOW POWER

 
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