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Datasheet> 器件分类 > 无线/射频/通信> 射频和微波> SGB-2233
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SGB-2233

产品描述Wide Band Low Power Amplifier,
产品类别无线/射频/通信    射频和微波   
文件大小826KB，共8页
制造商Qorvo
官网地址https://www.qorvo.com
下载文档 详细参数 全文预览

SGB-2233概述

Wide Band Low Power Amplifier,

SGB-2233规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Qorvo
Reach Compliance Codeunknown
射频/微波设备类型WIDE BAND LOW POWER

SGB-2233文档预览

SGB-2233(Z)
DC to 4.5GHz
Active Bias
Gain Block
SGB-2233(Z)
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
Package: 3x3 QFN, 16-Pin
Product Description
RFMD’s SGB-2233 is a high performance SiGe HBT MMIC amplifier utilizing a Dar-
lington configuration with an active bias network. The active bias network provides
stable current over temperature and process Beta variations. Designed to run
directly from a 3Vto5V supply the SGB-2233 does not require a drop resistor as
compared to typical Darlington amplifiers. This robust amplifier features a Class 1C
ESD rating, low thermal resistance, and unconditional stability. The SGB-2233
product is designed for high linearity 3V gain block applications that require small
size and minimal external components. It is on chip matched to 50Ω and an exter-
Optimum Technology
nal bias inductor choke is required for the application band.
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
GND
NC
RFIN
NC
NC
Active
Bias
NC
Vbias
VCC
NC
NC
NC
Features
High Reliability SiGe HBT
Technology
Robust Class 1C ESD
Simple and Small Size
P
1dB
=6.7dBm at 1950MHz
IP
3
=19.0dBm at 1950MHz
Low Thermal
Resistance=221C/W
3V Battery Operated Applica-
tions
LO Buffer Amp
RF Pre-Driver and RF Receive
Path
Parameter
Small Signal Gain
FO
R
LDMOS
Min.
11.4
Specification
Typ.
13.9
12.9
12.5
7.9
6.7
6.4
20.5
19.0
19.0
4.2
19.5
16.7
25.0
221
N
NC
NC
EW
NC
D
NC
RFOUT
ES
Max.
14.4
Unit
dB
dB
dB
dBm
dBm
dBm
dB
dB
dB
dB
MHz
dB
dB
mA
°C/W
850MHz
1950MHz
2400MHz
850MHz
1950MHz
2400MHz
850MHz
1950MHz
2400MHz
1950MHz
1950MHz
1950MHz
Output Power at 1dB Compression
Output Third Order Intercept Point
N
O
Noise Figure
Frequency of Operation
DC
Input Return Loss
13.5
Output Return Loss
12.7
Current
21.0
Thermal Resistance
Test Conditions: Z
0
=50Ω, V
CC
=3V, I
C
=25mA, T=30°C
T
5.2
16.5
5.2
4500
29.0
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS20160224
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
IG
N
junction to backside
Applications
Condition
1 of 8
SGB-2233(Z)
Absolute Maximum Ratings
Parameter
Current (I
C
total)
Max Device Voltage (V
D
)
Max RF Input Power
Power Dissipation
Max Junction Temperature (T
J
)
Operating Temperature Range (T
L
)
Max Storage Temperature
Rating
60
5
20
0.2
150
-40 to + 85
-40to+150
Unit
mA
V
dBm
W
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Detailed Performance Table: V
CC
=3V, I
C
=25mA, T=25°C, Z=50Ω
Noise Figure (NF)
dB
EW
Input Return Loss (IRL)
Output Return Loss (ORL)
Reverse Isolation (S
12
)
dB
dB
dB
32.3
34.5
17.7
4.3
D
Small Signal Gain (G)
Output 3rd Order Intercept Point (OIP
3
)
Output Power at 1dB Compression (P
1dB
)
dB
dBm
dBm
14.2
ES
14.1
21.5
8.2
13.9
20.5
7.9
25.8
25.8
18.0
3.9
23.4
22.0
18.2
3.9
Parameter
Unit
100
MHz
500
MHz
IG
N
850
MHz
1950
MHz
12.9
19.0
6.7
19.5
16.7
18.9
4.2
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l
2400
MHz
12.5
19.0
6.4
18.9
16.3
19.2
4.6
3500
MHz
11.2
14.3
15.4
20.2
5.0
N
16
15
Simplified Device Schematic
14
13
FO
1
R
Active
Bias
12
11
10
N
O
T
2
3
4
9
5
6
7
8
2 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS20160224
SGB-2233(Z)
Evaluation Board Data (V
CC
=V
BIAS
=3.0V, I
C
=25mA) Bias Tee substituted for DC feed inductor (L1)
Gain vs Frequency
16.0
OIP3 vs. Frequency
24.0
22.0
20.0
15.0
OIP3 (dBm)
14.0
Gain (dB)
18.0
16.0
14.0
12.0
10.0
0.4
+25c
+85c
0c
-20c
13.0
+25c
+85c
11.0
-40C
12.0
10.0
0.4
IG
N
-40c
0.9
1.4
0.5
1.0
1.5
2.0
0.9
1.4
1.9
2.4
1.9
2.4
Frequency (GHz)
Frequency (GHz)
P1dB vs. Frequency
10.0
9.0
8.0
7.0
EW
Noise Figure (dB)
P1dB (dBm)
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.4
+25c
+85c
0c
-20c
-40c
0.9
1.4
1.9
D
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.0
+25c
+85c
-40c
FO
R
2.4
N
ES
0.045
0.040
0.035
0.030
Noise Figure vs. Frequency
2.5
3.0
3.5
Frequency (GHz)
Frequency (GHz)
0.0310
0.0290
0.0270
N
O
T
Ic vs. Temperature
Current vs. Voltage
Ic (mA)
0.0250
0.0230
0.0210
0.0190
0.0170
Ic (A)
+
85c
+
25c
0c
-20c
-40c
0.025
0.020
0.015
0.010
0.005
0.0150
Temperature
0.000
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
Vc (Volts)
DS20160224
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 8
SGB-2233(Z)
Evaluation Board Data (V
CC
=V
BIAS
=3.0V, I
C
=25mA) Bias Tee substituted for DC feed inductor (L1) cont.
l S
21
l vs. Frequency
18.0
16.0
14.0
0.0
-5.0
-10.0
l S
11
l vs. Frequency
S
21
(dB)
12.0
10.0
+25c
8.0
6.0
4.0
0.0
+85c
-40c
S
11
(dB)
-15.0
-20.0
+25c
-25.0
-30.0
-35.0
0.0
+85c
1.0
2.0
3.0
4.0
5.0
6.0
1.0
IG
N
2.0
3.0
-40c
4.0
5.0
6.0
Frequency (GHz)
l S
12
l vs. Frequency
-10.0
+25c
-15.0
+85c
-40c
-20.0
N
EW
S
22
(dB)
S
12
(dB)
D
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
-35.0
0.0
+25c
+85c
-40c
6.0
1.0
2.0
3.0
4.0
-25.0
1.0
2.0
3.0
FO
-30.0
0.0
4.0
R
5.0
ES
0.0
Frequency (GHz)
l S
22
l vs. Frequency
5.0
6.0
Frequency (GHz)
Frequency (GHz)
N
O
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
T
4 of 8
DS20160224
SGB-2233(Z)
Pin
1, 2,
4, 6,
7, 8,
11,
12, 14
3
5
10
13
16
Back-
side
Function
NC
Description
These are no connect pins. Leave them unconnected on the PC board.
The backside exposed paddle is the main electrical GND and requires multiple vias in the PC board to GND. It is also the
main thermal path.
Dimensions in millimeters (inches)
1.58 [0.062]
0.50 [0.020]
0.26 [0.010]
EW
N
0.005 CHAMFER
(8PL)
D
1.58 [0.062]
R
0.75 [0.030]
T
Recommended PCB Soldermask for Land Pattern
0.50 [0.020]
0.25 [0.010]
0.53 [0.021]
N
O
FO
3.17 [0.125]
0.46 [0.018]
1.20 [0.047]
DS20160224
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
ES
0.38 [0.015]
0.29 [0.011]
0.21 [0.008]
Ø0.38 [Ø0.015]
Plated Thru (4PL)
Recommended Land Pattern
1.20 [0.047]
IG
N
RF IN
GND
RF OUT
VBIAS
VCC
GND
RF input pin. A DC voltage should not be connected externally to this pin
An extra ground pin that is connected to the backside exposed paddle. Connection is optional.
RF Output pin. Bias is applied to the Darlington stage thru this pin.
This pin sources the current from the active bias circuit. Connect to pin 10 thru an inductor choke.
This is Vcc for the active bias circuit.
5 of 8
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