Pb Free Product
Halogen Free Compliance
http://www.ncepower.com
NCE4618SP
General Features
●
V
SSS
=24V,I
S
=6A
●
2.5V drive
●
Common-drain type
●
2KV HBM
NCE
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Description
The NCE4618SP uses advanced trench technology to provide
excellent R
SS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V while retaining a 12V V
GS(MAX)
rating. It
is ESD protected. This device is suitable for use as a
unidirectional or bi-directional load switch, facilitated by its
common-drain configuration.
Package Information
●
Minimum Packing Quantity : 5,000 pcs./reel
Application
Package Dimensions
Unit : mm
●
Lithium-ion battery charging and discharging switch
Equivalent Circuit
Marking and pin assignment
CSP top view
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Symbol
V
SSS
V
GSS
I
S
I
SP
Source to Source Voltage
Gate-Source Voltage
Source Current(DC)
Source Current (Pulse)
Total Dissipation
Channel Temperature
Storage Temperature
Parameter
Limit
24
±12
6
60
1.6
150
-55 To 150
Unit
V
V
A
A
W
℃
℃
P
T
Tch
T
STG
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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Electrical Characteristics (T
A
=25℃unless otherwise noted)
Symbol
Static Parameters
BV
SSS
I
SSS
I
GSS
V
GS(off)
|yg
FS
|
Source to Source Breakdown Voltage
Zero- Gate Voltage Source Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
I
S
=1mA, V
GS
=0V, Test Circuit 1
VSS=20V, VGS=0V, Test Circuit 1
VSS=0V, VGS= ±8V, Test Circuit 2
VSS=10V, I
S
=1mA, Test Circuit 3
V
SS
=10V,I
S
=3A, Test Circuit 4
V
GS
=4.5V,I
S
=3A, Test Circuit 5
R
SS(on)
Static Source to Source
On-Resistance
V
GS
=4.0V,I
S
=3A, Test Circuit 5
V
GS
=3.7V,I
S
=3A, Test Circuit 5
V
GS
=3.1V,I
S
=3A, Test Circuit 5
V
GS
=2.5V,I
S
=3A, Test Circuit 5
t
d(on)
t
r
t
d(off)
t
f
Q
g
V
F(S-S)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Diode Forward Voltage
V
SS
=10V,I
S
=6A,V
GS
=4.5V
Test Circuit 8
V
GS
=0V,I
S
=6A
V
SS
=10V,I
S
=3A V
GS
=4.5V
Test Circuit 7
-
-
-
-
-
-
24
-
-
0.5
6.5
NCE4618SP
Condition
Min
Typ
-
-
-
0.83
-
18.3
19
19.3
20.3
23.0
15
50
40
55
25.4
-
Parameter
Max
-
1
±1
1.3
-
21.5
22.5
24
27
32
-
-
-
-
-
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
mΩ
mΩ
nS
nS
nS
nS
nC
V
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
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Pb Free Product
Halogen Free Compliance
http://www.ncepower.com
Test Circuit
NCE4618SP
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
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Typical Electrical and Thermal Characteristics (Curves)
Static Source to Source On state
Resistance , R
SS(on)
(mΩ)
NCE4618SP
I
S
- Source Current (A)
Vss Source -Source Voltage (V)
T
A
-Ambient Temperature(℃)
Figure 1 On-Region Characteristics
Figure 4 Rss(on)- Ambient Temperature
Vgs Gate-Source Voltage (V)
I
S
- Source Current (A)
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Static Source to Source On state
Resistance , R
SS(on)
(mΩ)
Figure 5 Gate Charge
Vgs Gate-Source Voltage (V)
I
s
- Reverse Drain Current (A)
Vss Forward Source- Source Voltage (V)
Figure3 On-Resistance-
Gate-Source Voltage
Figure 6 Body-Diode Characteristics
Wuxi NCE Power Semiconductor Co., Ltd
Page 4
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Pb Free Product
Halogen Free Compliance
http://www.ncepower.com
NCE4618SP
|yg
FS
| Forward Transfer Admittance
(S)
I
S
- Source Current (A)
I
S
- Source Current (A)
V
SS
Source -Source Voltage (V)
Figure7 |yfs|-- I
S
Figure 8 Safe Operation Area
P
T
- Total Dissipation (W)
T
A
-Ambient Temperature(℃)
Figure 9 P
T
Dissipation De-rating
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
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